H10K10/20

HETEROGENEOUS NANOSTRUCTURES FOR HIERARCHAL ASSEMBLY
20180013070 · 2018-01-11 ·

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

Liquid crystal display device

To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That is, by changing the level of voltage applied to a first terminal and a second terminal (terminals serving as a source and a drain) every given period, the source and the drain are switched every given period. Specifically, in a portion which successively outputs signals having certain levels (e.g., L-level signals) in a circuit including a transistor, L-level signals having a plurality of different potentials (L-level signals whose potentials are changed every given period) are used as the signals having certain levels.

Nanoparticles

The present invention relates to nanoparticles of π-conjugated polymers. The present invention also relates to an aqueous composition comprising these polymeric nanoparticles, to processes for making the nanoparticles, and to the use of these nanoparticles in the fabrication of electronic devices and components.

LIQUID CRYSTAL DISPLAY DEVICE
20170329194 · 2017-11-16 ·

To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That is, by changing the level of voltage applied to a first terminal and a second terminal (terminals serving as a source and a drain) every given period, the source and the drain are switched every given period. Specifically, in a portion which successively outputs signals having certain levels (e.g., L-level signals) in a circuit including a transistor, L-level signals having a plurality of different potentials (L-level signals whose potentials are changed every given period) are used as the signals having certain levels.

PRINTED WIRELESS INDUCTIVE-CAPACITIVE (LC) SENSOR FOR HEAVY METAL DETECTION

An inductive-capacitive (LC) wireless sensor for the detection of toxic heavy metal ions includes inductors and interdigitated electrodes (IDE) in planar form. The sensor may be fabricated by screen printing silver (Ag) ink onto a flexible polyethylene-terephthalate (PET) substrate to form a metallization layer. Palladium nanoparticles (Pd NP) may be drop casted onto the IDEs to form a sensing layer. The resonant frequency of the LC sensor may be remotely monitored by measuring the reflection coefficient (S.sub.11) of a detection coil (planar inductor). The resonant frequency of the LC sensor changes with varying concentrations of heavy metals such as mercury (Hg.sup.2+) and lead (Pb.sup.2+) ions. Changes in the resonant frequency may be used to detect the presence and/or concentration of heavy metal ions.

LIQUID CRYSTAL DISPLAY DEVICE
20220057684 · 2022-02-24 ·

To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That is, by changing the level of voltage applied to a first terminal and a second terminal (terminals serving as a source and a drain) every given period, the source and the drain are switched every given period. Specifically, in a portion which successively outputs signals having certain levels (e.g., L-level signals) in a circuit

including a transistor, L-level signals having a plurality of different potentials (L-level signals whose potentials are changed every given period) are used as the signals having certain levels.

METHODS FOR ENHANCED STATE RETENTION WITHIN A RESISTIVE CHANGE CELL
20170309334 · 2017-10-26 · ·

A method for improving the stability of a resistive change cell is disclosed. The stability of a resistive change memory cell-that is, the tendency of the resistive change memory cell to retain its programmed resistive state-may, in certain applications, be compromised if the cell is programmed into an unstable or metastable state. In such applications, a programming method using bursts of sub-pulses within a pulse train is used to drive the resistive change cell material into a stable state during the programming operation, reducing resistance drift over time within the cell.

HETEROGENEOUS NANOSTRUCTURES FOR HIERARCHAL ASSEMBLY
20170294586 · 2017-10-12 ·

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

ALL SOLID STATE SECONDARY BATTERY, SOLID ELECTROLYTE COMPOSITION USED THEREFOR, ELECTRODE SHEET FOR BATTERY, AND METHOD FOR MANUFACTURING ELECTRODE SHEET FOR BATTERY AND ALL SOLID STATE SECONDARY BATTERY

Provided are an all solid state secondary battery having a positive electrode active material layer, an inorganic solid electrolyte layer, and a negative electrode active material layer in this order, in which at least one layer of the positive electrode active material layer, the inorganic solid electrolyte layer, or the negative electrode active material layer includes a polymer and an inorganic solid electrolyte, in which the polymer is a crosslinking polymer having both of hetero atoms and carbon-carbon unsaturated bonds not contributing to aromaticity in a main chain, and the inorganic solid electrolyte contains a metal belonging to Group I or II of the periodic table and has an ion conductivity of the metal being contained, a solid electrolyte composition being used therefor, an electrode sheet for a battery, and a method for manufacturing an electrode sheet for a battery and an all solid state secondary battery.

COMPOSITION FOR FORMING ORGANIC SEMICONDUCTOR FILM AND ORGANIC SEMICONDUCTOR ELEMENT
20170288151 · 2017-10-05 ·

A composition for forming an organic semiconductor film includes an organic semiconductor represented by the following Formula A-1, and a solvent having a boiling point of from 150° C. to 300° C. and an SP value of from 15.0 to 18.0.

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