The present invention provides an array substrate, a method for manufacturing the array substrate, and a display panel. The array substrate includes a driving transistor, and the driving transistor includes: a gate electrode; an active layer arranged opposite to a position of the gate electrode, the active layer includes a first semiconductor and second semiconductors, the second semiconductors are in contact with the first semiconductor to form a first PN junction and a second PN junction respectively, and the first PN junction corresponds to the source electrode; and a source drain layer, including a source electrode and a drain electrode. The second semiconductors are electrically connected with the source electrode and drain electrode, respectively.

The present invention provides an array substrate, a method for manufacturing the array substrate, and a display panel. The array substrate includes a driving transistor, and the driving transistor includes: a gate electrode; an active layer arranged opposite to a position of the gate electrode, the active layer includes a first semiconductor and second semiconductors, the second semiconductors are in contact with the first semiconductor to form a first PN junction and a second PN junction respectively, and the first PN junction corresponds to the source electrode; and a source drain layer, including a source electrode and a drain electrode. The second semiconductors are electrically connected with the source electrode and drain electrode, respectively.

Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.

Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.

Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.