Provided herein are wafers that can be used to align carbon nanotubes, as well as methods of making and using the same. Such wafers include alignment areas that have four sides and a surface charge, where the alignment areas are surrounded by areas that have a surface charge of a different polarity. Methods of the disclosure may include depositing and selectively etching a number of hardmasks on a substrate. The described methods may also include depositing a carbon nanotube on such a wafer.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

An organic light emitting display device includes a plurality of pixels each having a pixel driving circuit. Each of the pixels includes an organic light emitting diode and a driving TFT that controls driving of the organic light emitting diode and includes an active layer of low temperature poly-silicon, a gate node, a source node, and a drain node. The pixels include first to fifth switching TFTs electrically connected to the driving TFT and each including an active layer of an oxide semiconductor, a gate node, a source node, and a drain node. Further, the pixels include a storage capacitor connected between the gate node of the driving TFT and the source node of the fifth switching TFT and a coupling capacitor electrically connected in series to the storage capacitor and configured to cause capacitive coupling to supply a bootstrapped voltage to the gate node of the driving TFT.

A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

The present invention relates to a platinum metal complex and an application thereof in an organic light-emitting device. The platinum metal complex is a compound having a structure of chemical formula (I). An organic light-emitting device to which the compound is applied has a relatively low driving voltage, a relatively high luminous efficiency and improved service life to a certain extent; therefore, the complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

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A transistor structure is presented comprising: an organic semiconductor channel region, and source and drain electrodes in electrical contact with said organic semiconductor channel region, wherein at least one of said source and drain electrodes is formed by spaced apart regions of a first metallic material separated by regions of a second metallic material such that regions of the first and second metallic materials are in contact with the organic semiconductor channel region, said first metallic material being selected as having work function substantially similar to HOMO energy level of said organic semiconductor channel region and said second metallic material being selected as having work function substantially similar to LUMO energy level of said organic semiconductor channel region, thereby enabling selective injections of electrons or holes into said channel region.

A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Described are concepts, systems, circuits, devices, structures and methods for depositing carbon nanotubes (CNTs) uniformly over a substrate. The described concepts, systems, circuits, devices, structures and methods meet at least several requirements; namely, the systems, circuits, devices, structures are: (1) manufacturable; (2) silicon-CMOS compatible; and (3) provide a path for realizing energy efficiency benefits utilizing silicon. In embodiments, described is an illustrative CNT solution-based deposition technique that addresses all of these requirements. Also described is a method for providing carbon nanotube field effect transistors (CNFETs) using uniform and reproducible fabrication techniques suitable for use across industry-standard wafers and which may use the same equipment currently being used to fabricate silicon product wafers. Also described are CNFETs fabricated within commercial silicon manufacturing facilities and having wafer-scale uniformity and reproducibility across multiple wafers.

A light-emitting device including an organometallic compound represented by Formula 1, an electronic apparatus including the light-emitting device, and the organometallic compound represented by Formula 1 are provided.

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A light-emitting device including an organometallic compound represented by Formula 1, an electronic apparatus including the light-emitting device, and the organometallic compound represented by Formula 1 are provided.

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