A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

Embodiments provide a cyclic compound, a light-emitting device including the cyclic compound, and an electronic apparatus including the light-emitting device. The light-emitting device includes a first electrode, a second electrode facing the first electrode, an interlayer between the first electrode and the second electrode and including an emission layer; and at least one cyclic compound. The cyclic compound is represented by Formula 1:

##STR00001##

The description of Formula 1 is provided in the specification.

Embodiments provide a cyclic compound, a light-emitting device including the cyclic compound, and an electronic apparatus including the light-emitting device. The light-emitting device includes a first electrode, a second electrode facing the first electrode, an interlayer between the first electrode and the second electrode and including an emission layer; and at least one cyclic compound. The cyclic compound is represented by Formula 1:

##STR00001##

The description of Formula 1 is provided in the specification.

The present application relates to an organic electronic device, said electronic device comprising a multi-layer electrode as well as an organic semiconducting layer, as well as to a method for producing such organic electronic device.

The present application relates to an organic electronic device, said electronic device comprising a multi-layer electrode as well as an organic semiconducting layer, as well as to a method for producing such organic electronic device.

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm.sup.2.Math.V.sup.−1.Math.s.sup.−1) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to Cu.sub.2O. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.

The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.