A method of manufacturing a display apparatus includes forming a thin-film transistor on a substrate and forming a planarization layer to cover the thin-film transistor, forming, on the planarization layer, a pixel electrode electrically connected to the thin-film transistor and a pixel defining layer exposing at least a center portion of the pixel electrode, and defining at least one groove having a closed curve shape at a location corresponding to a second non-display area. When the thin-film transistor is formed, a voltage line is also formed at a location corresponding to a first non-display area. When the at least one groove is formed, a portion of the planarization layer disposed between the pad area and the display area is simultaneously removed such that a portion of the voltage line between the pad area and the display area is exposed.

Disclosed is a display device including a base layer, a circuit layer including a plurality of transistors spaced apart from each other and disposed on a top of the base layer, a plurality of insulating layers disposed on a top of the base layer, and a plurality of contact electrodes electrically connected to the transistors, respectively, a first light emitting unit disposed on a top of the circuit layer, a second light emitting unit, and a lower protrusion disposed between at least one of the transistors and the second lower electrode, wherein at least one of the contact electrodes is disposed to extend to a top surface of the lower protrusion in the circuit layer while following a shape of the lower protrusion to simplify an etching process of an encapsulation layer.

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

Aspects of the disclosure relate to a semiconductor device power management system including a semiconductor device of a set of semiconductor devices provided on a substrate, wherein the semiconductor device includes an independent power supply unit.

A fabrication method for a light-emitting device includes providing a hole functional layer disposed between a quantum dot light-emitting layer and an anode, and providing an electron functional layer disposed between the quantum dot light-emitting layer and a cathode. The hole functional layer includes a mixed material of a hole transport material and a hole injection material. A thickness of the hole functional layer being selected from a thickness range corresponding to ⅓˜⅔ of abscissa between an origin and a first positive trough in a cavity standing wave of the mixed material. The absolute value of a difference between a thickness of the electron functional layer and a thickness corresponding to a first positive crest of a cavity standing wave of an electron functional material is less than or equal to 5 nm.

The present application provides an encapsulation film comprising an encapsulation layer, a metal layer, and a protective layer. The encapsulation film provides a structure capable of blocking moisture or oxygen introduced into an organic electronic device from the outside, minimizes the appearance change of the film due to excellent handling properties and processability, and prevents physical and chemical damage during encapsulation process.

An organic electroluminescent device includes, from bottom to top, a substrate, a first electrode and a light-emitting component in sequence, where the light-emitting component is disposed on the first electrode, and a secondary electrode structure is disposed on an upper side surface of the light-emitting component and includes a sub-electrode, a dielectric material layer and an outer layer electrode, where the dielectric material layer is disposed between the sub-electrode and the outer layer electrode, the sub-electrode is in contact with the light-emitting component, the dielectric material layer and the sub-electrode completely cover a light-emitting region of the light-emitting component, the outer layer electrode completely covers the dielectric material layer, and in a non-light-emitting region on the periphery of the light-emitting component, the outer layer electrode is electrically connected to the sub-electrode.

A display apparatus includes a cover plate and a display substrate. The cover plate includes a first base substrate, a black matrix and a support layer stacked on a side of the first base substrate, and a quantum dot layer disposed on the side of the first base substrate. The black matrix and the support layer each have a plurality of openings to form a plurality of opening regions. The quantum dot layer includes a plurality of quantum dot units. Each quantum dot unit is located in an opening region in the plurality of opening regions. The display substrate includes a second base substrate, driving circuit structures disposed on a side of the second base substrate, and light-emitting devices disposed on a side of the driving circuit structures. Each light-emitting device is coupled to a driving circuit structure in the driving circuit structures to emit light.

Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.

The present invention is directed to a method for preparing a device, the method comprising: forming a first layer on top of a first electrode, the layer comprising a metal oxide that is formed by the deposition of a metal oxide precursor composition that can be directly patterned by means of exposure to electromagnetic radiation to form a patterned metal oxide layer, optionally forming a second electrode over the first device layer, wherein the method further includes optionally forming a layer comprising quantum dots on top of the first layer or after formation of the first layer, and to a device comprising a first layer comprising a metal oxide prepared by the method of the invention.