Provided are a photoelectric conversion element that displays excellent photoelectric conversion efficiency and is easy to produce and a method of producing this photoelectric conversion element. A photoelectric conversion element (100) includes, in stated order, a light-transmitting base plate (1), a transparent conductive film (2), a first conductive layer (5) formed of a base layer (3) and a porous semiconductor layer (4), a power-generating layer (6), and a second conductive layer (8). The second conductive layer (8) is formed of a porous self-supporting sheet that at least contains one or more single-walled carbon nanotubes.

The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate band solar cell excellent in quantum yield of two-step photon absorption, a photoelectric conversion element, and an intermediate band solar cell having the light absorption layer, the light absorption layer of the present invention containing a perovskite compound and a quantum dot having an upper end of a valence band at an energy level more negative than an upper end of a valence band of the perovskite compound, and having an intermediate band.

Disclosed is a tandem solar cell according to an aspect including: a silicon lower cell; a perovskite upper cell disposed on the silicon lower cell; and a bonding layer for bonding the silicon lower cell and the perovskite upper cell between the silicon lower cell and the perovskite upper cell, wherein the front surface portion of the silicon lower cell being in contact with the bonding layer includes a texture structure, the bonding layer includes a first transparent electrode layer formed on the sidewall of the texture structure, a buried layer filling concave portions of the texture structure on the first transparent electrode layer, and a second transparent electrode layer on top surfaces of the buried layer, the first transparent electrode layer and the texture structure.

Nanoscale metal halide perovskites are provided. The nanoscale metal halide perovskites may have a 2D structure, a quasi-2D structure, or a 3D structure. Methods also are provided for making the nanoscale metal halide perovskites. The color emitted by the nanoscale metal halide perovskites may be tuned.

A method for operating a photovoltaic module in which the photovoltaic module has at least one perovskite solar cell. The method includes temporarily operating the photovoltaic module at the maximum power point by a control device connected to the photovoltaic module, wherein the drawing of electrical energy is interrupted when the irradiance of electromagnetic radiation impinging on the photovoltaic module falls below a predetermined threshold value. A photovoltaic device includes a photovoltaic module having at least one perovskite solar cell, and a control device connected to the photovoltaic module.

In a first aspect, the present invention relates to a perovskite material comprising negatively charged layers alternated with and neutralized by positively charged layers; the negatively charged layers having a general formula selected from the list consisting of: L.sub.n−1M.sub.nX.sub.3n+1, L.sub.nM.sub.nX.sub.3n+2, and L.sub.n−1M′.sub.nX.sub.3n+3, and the positively charged layers comprising: one or more organic ammonium cations independently selected from monovalent cations Q and divalent cations Q′, or a polyvalent cationic conjugated organic polymer Z, wherein Q, Q′ and Z comprise each a π-conjugated system in which at least 8 and preferably at least 10 atoms participate, L is a monovalent cation, M.sub.n are n independently selected metal cations averaging a valence of two, M′.sub.n are n independently selected metal cations averaging a valence equal to 2+2/n, X is a monovalent anion, and n is larger than 1.

Provided is a solar cell module including photoelectric conversion elements, wherein each of the photoelectric conversion elements includes a first substrate, and a first electrode, a hole blocking layer, an electron transport layer, a hole transport layer, a second electrode, and a second substrate on the first substrate, and a sealing member between the first substrate and the second substrate, and wherein, within at least two of the photoelectric conversion elements adjacent to each other, the hole-blocking layers are not extended to each other but the hole transport layers are in a state of a continuous layer where the hole transport layers are extended to each other.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

A spirobifluorene compound and a perovskite solar cell including the spirobifluorene compound are disclosed. More particularly, a spirobifluorene compound which can be used as a hole transport material of a perovskite solar cell is disclosed. A perovskite solar cell including the spirobifluorene compound as a hole transport material is further disclosed.

Photoelectric conversion element including: substrate; first electrode; hole-blocking layer; photoelectric conversion layer; and second electrode, the photoelectric conversion layer including electron-transporting layer and hole-transporting layer, wherein in photoelectric conversion element edge part in direction orthogonal to stacking direction of the substrate, first electrode, hole-blocking layer, photoelectric conversion layer, and second electrode, electron-transporting layer outermost end is positioned inside than first electrode outermost end, hole-transporting layer outermost end is positioned outside than second electrode outermost end, and the second electrode outermost end is positioned inside than the electron-transporting layer outermost end, and height of edge part including the first electrode outermost end in the stacking direction is smaller than total of average thicknesses of first electrode, hole-blocking layer, and electron-transporting layer, where the height is distance between substrate surface at first electrode side and portion of first electrode closest to second electrode side in the photoelectric conversion element edge part.