The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Disclosed are a series of photoisomeric compounds, preparation method therefor and device comprising the compounds, wherein a photoisomeric compound-graphene molecular junction device is formed by linking the photoisomeric compound to a gap of two-dimensional monolayer graphene having a nano-gap array via an amide covalent bond. When a single photoisomeric compound is bridged to the gap of the two-dimensional monolayer graphene having a nano-gap array, the devices have a reversible light-controlled switching function and a reversible electrically-controlled switching function. A molecular switch device prepared by the method can achieve a high reversibility and a good reproducibility. The number of light-controlled switching cycles can exceed 10.sup.4, and the number of electrically-controlled switching cycles can reach about 10.sup.5 or greater. Moreover, the above-mentioned reversible molecular switch device remains stable within a period of more than one year. In addition, flexible non-losable organic memory transistor devices and light-responsive organic transistor devices can be constructed using the above-mentioned series of photoisomeric compounds.

A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

A method for constructing a solar rectenna array by growing carbon nanotube antennas between lines of metal, and subsequently applying a bias voltage on the carbon nanotube antennas to convert the diodes on the tips of the carbon nanotube antennas from metal oxide carbon diodes to geometric diodes. Techniques for preserving the converted diodes by adding additional oxide are also described.

A molecular electronic device (10) includes a framework of polynucleotides (3), one or more molecular electronic components (4) and one or more electrical contacts (7). The molecular electronic components and the electrical contacts are each connected to the plurality of polynucleotides such that the molecular electronic components and the electrical contacts are located with respect to the framework and with respect to each other. This forms a coupling between the electrical contacts and the molecular electronic components.

A method for constructing a solar rectenna array by growing carbon nanotube antennas between lines of metal, and subsequently applying a bias voltage on the carbon nanotube antennas to convert the diodes on the tips of the carbon nanotube antennas from metal oxide carbon diodes to geometric diodes. Techniques for preserving the converted diodes by adding additional oxide are also described.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self-assembly.

Photopolymers, monomers, compositions including photopolymers and a dopant, and methods, including methods for eliciting a photomechanical response. The dopant may be a triplet sensitizing dopant. The exposing of compositions to the one or more wavelengths of electromagnetic radiation may elicit a photomechanical response via a triplet excited state mechanism.

A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a π-conjugated molecule having a π-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.