The present invention provides a photoelectric conversion element having excellent heat resistance. In addition, the present invention provides an optical sensor and an imaging element including the photoelectric conversion element. In addition, the present invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element according to the embodiment of the present invention including a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) or (2). ##STR00001##

The present invention relates to hybrid transparent conducting electrode comprising reduced graphene oxide film, metal mesh and textured glass, wherein the reduced graphene oxide film is coated on the textured glass embedded with the metal mesh or the reduced graphene oxide film is sandwiched between the textured glass and the metal mesh. The present invention also relates to a process of preparing the hybrid conducting transparent conducting electrode. The said transparent conducting electrode exhibits transparency ranging from about 70% to 85% with sheet resistance ranging from about 5 Ω/sq to 100 Ω/sq.

Colloidal synthesis of narrowly disperse, near IR emitting Group IV alloy quantum dots with wide range of Sn compositions via reduction of precursor halides is provided, allowing for less-toxic, earth abundant, and silicon-compatible Group IV alloy quantum dots for application in a broad range of electronic and photonic technologies.

An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

To provide a transparent electrode that hardly causes migration of silver and has high resistance, a method for producing the same, and an electronic device using the transparent electrode.

A transparent electrode according to the embodiment includes a laminated structure in which a transparent base material, a conductive silver-containing layer, and a conductive oxide layer are laminated in this order,

wherein a ratio T.sub.800/T.sub.600 of total transmittances of the transparent electrode is 0.85 or more, where T.sub.800 and T.sub.600 are transmittances at wavelengths of 800 nm and 600 nm, respectively, and

the silver-containing layer is continuous. This electrode can be produced by bringing sulfur or a sulfur compound into contact with a laminated film in which a conductive silver-containing layer and a conductive oxide layer are laminated to form a sulfur-containing silver compound layer.

A semi-transparent perovskite-based photovoltaic cell (or solar cell), wherein the photoactive perovskite layer includes at least one polysaccharide-based inert polymer in an amount ranging between 0.5% by weight and 3.5% by weight, preferably ranging between 1% by weight and 3% by weight, more preferably ranging between 1.5% by weight and 2.8% by weight, with respect to the total weight of the perovskite precursors. The semi-transparent perovskite-based photovoltaic cell (or solar cell) can be advantageously used in various applications that require the production of electricity through the exploitation of light energy, in particular solar radiation energy such as, for example: building integrated photovoltaic (BIPV) systems; photovoltaic windows; greenhouses; photo-bioreactors; noise barriers; lighting; design; advertising; automotive industry. Said semi-transparent perovskite-based photovoltaic cell (or solar cell) can be used either in a “stand alone” mode or in modular systems.

A semi-transparent perovskite-based photovoltaic cell (or solar cell), wherein the photoactive perovskite layer includes at least one polysaccharide-based inert polymer in an amount ranging between 0.5% by weight and 3.5% by weight, preferably ranging between 1% by weight and 3% by weight, more preferably ranging between 1.5% by weight and 2.8% by weight, with respect to the total weight of the perovskite precursors. The semi-transparent perovskite-based photovoltaic cell (or solar cell) can be advantageously used in various applications that require the production of electricity through the exploitation of light energy, in particular solar radiation energy such as, for example: building integrated photovoltaic (BIPV) systems; photovoltaic windows; greenhouses; photo-bioreactors; noise barriers; lighting; design; advertising; automotive industry. Said semi-transparent perovskite-based photovoltaic cell (or solar cell) can be used either in a “stand alone” mode or in modular systems.

An object of the present invention is to provide a photoelectric conversion element that includes a photoelectric conversion film excellent in the vapor deposition suitability, and that exhibits excellent external quantum efficiency to light at all wavelengths in a red wavelength range, a green wavelength range, and a blue wavelength range. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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