Disclosed is a manufacturing apparatus of a light-emitting element. The manufacturing apparatus includes: a main transporting route including a first transfer device and a second transfer device connected to each other through a first transporting chamber; a sub-transporting route extending in a direction intersecting the main transporting route, the sub-transporting route including: a second transporting chamber connected to the first transfer device or the second transfer device; and a delivery chamber connected to the second transporting chamber; and a plurality of treatment chambers connected to the delivery chamber. A region to which the first transfer device, the second transfer device, the first transporting chamber, and the second transporting chamber are connected is under a continuous vacuum environment.

There is disclosed a compound Formula I ##STR00001##
In Formula I: Z is CR.sup.4R.sup.5, C═CR.sup.4R.sup.5, SiR.sup.4R.sup.5, GeR.sup.4R.sup.5, NR.sup.4a, PR.sup.4a, P(O)R.sup.4a, O, S, SO, SO.sub.2, Se; SeO, SeO.sub.2, Te, TeO, or TeO.sub.2; R.sup.1-R.sup.3 are the same or different at each occurrence and are D, aryl, heteroaryl, alkyl, amino, silyl, germyl, deuterated aryl, deuterated heteroaryl, deuterated alkyl, deuterated amino, deuterated silyl, or deuterated germyl, where two groups selected from R.sup.1, R.sup.2, and R.sup.3 can be joined together to form a fused ring; R.sup.4-R.sup.5 are the same or different at each occurrence and are H, D, aryl, heteroaryl, alkyl, amino, silyl, germyl, deuterated aryl, deuterated heteroaryl, deuterated alkyl, deuterated amino, deuterated silyl, or deuterated germyl; R.sup.4ais alkyl, silyl, germyl, aryl, or a deuterated analog thereof; a is an integer from 0-4; b and c are the same or different and are an integer from 0-3.

A display device achieves a high resolution and a low power consumption through provision of subpixels each including a single light emitting layer and subpixels each including a plurality of overlapping light emitting layers. In the display device, it is also unnecessary to increase the number of expensive fine metal masks even for rendering of various grayscales. In addition, in the display device, different light emitting layers overlap with each other, and a charge generation layer is disposed between the overlapping light emitting layers, and, as such, emission of a secondary color can be achieved without necessity of a material for an additional light emitting layer of the secondary color.

The present invention relates to an organic light emitting diode including an anode electrode, a cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer are arranged between the anode electrode and the cathode electrode and the organic semiconductor layer includes a substantially metallic rare earth metal dopant and a first matrix compound, the first matrix compound including at least two phenanthrolinyl groups as well as to a method for preparing the same.

The present invention relates to organic light-emitting diodes that include an anode electrode, a transparent cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer is arranged between the anode electrode and the transparent cathode electrode and the organic semiconductor layer includes a first zero-valent metal dopant and a first matrix compound wherein the first matrix comprising at least two phenanthrolinyl groups as well as to a method for manufacturing the same.

A light emitting component is disclosed. In an embodiment a light-emitting device includes at least one active layer stack configured to generate light, a first electrode electrically contacting the at least one active layer stack, a second electrode electrically contacting the at least one active layer stack and at least one light-emitting face for emitting light. The device further includes a first contact structure electrically conductively connected to the first electrode and a second contact structure electrically conductively connected to the second electrode, wherein the first contact structure laterally surrounds a major part of the at least one light-emitting face and a major part of the second contact structure, and wherein the second contact structure laterally surrounds a major part of the at least one light-emitting face.

An embodiment provides a light emitting device including: a first electrode; a second electrode overlapping the first electrode in a plan view; and a light emitting part disposed between the first electrode and the second electrode. The second electrode includes a first layer disposed on the light emitting part and including a first organic material, and a metal thin film layer disposed on the first layer and including a first metal. The light emitting part includes an emission layer, a hole transport region disposed between the first electrode and the emission layer, and an electron transport region disposed between the emission layer and the second electrode. The first layer is disposed on the electron transport region.

A light-emitting element is provided. The light-emitting element includes first and second electrodes and an EL layer therebetween. The EL layer includes a light-emitting layer containing first and second substances. The amount of the first substance is larger than that of the second substance. The second substance emits light. Average transition dipole moments of the second substance are divided into three components in x-, y-, and z-directions which are orthogonal to each other. Components parallel to the first or second electrode are assumed to be the components in the x- and y-directions, and a component perpendicular to the first or second electrode is assumed to be the component in the z-direction. The proportion of the component in the z-direction is represented by a, which is less than or equal to 0.2.

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

The present invention provides an organic electroluminescent panel capable of increasing the luminous efficacy and decreasing the driving voltage of a top emission (TE) organic EL element. The organic electroluminescent panel of the present invention includes: a substrate; and an organic electroluminescent element provided on the substrate. The organic electroluminescent element is a top emission element that includes, in the order from the substrate side: an anode; a light-emitting layer; an electron transport layer; a first metal layer; a p-type oxide layer; and a transparent cathode. The top emission element is configured to emit light from the transparent cathode side. The light-emitting layer and the electron transport layer are each formed from an organic material. At least one of a mixture layer of a p-type oxide and a hole transport material and a second metal layer is provided between the electron transport layer and the transparent cathode.