H10K85/146

Semiconducting polymer blends for high temperature organic electronics

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

Polymeric Compound, Electroluminescent Device Material, Electroluminescent Device, and Electronic Device

As a technology capable of improving the durability of an electroluminescent device, for example, luminescence lifespan, a polymeric compound including a structural unit represented by Chemical Formula 1, or a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and an electroluminescent device material or electroluminescent device including the same are provided:

##STR00001##

In Chemical Formula 1 and Chemical Formula 2, R.sup.11 to R.sup.14 are not the same as R.sup.41 to R.sup.44.

Polymer, coating composition comprising same, and organic light emitting element using same

The present specification relates to a polymer including: a first unit represented by Formula 1; and a second unit represented by Formula 2, a coating composition including the same, and an organic light emitting device formed by using the same.

Quantum-dot light emitting diode and quantum-dot light emitting display device including the same
11489130 · 2022-11-01 · ·

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode and a second electrode facing each other; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron transporting layer positioned between the QD emitting material layer and the second electrode and including an electron-property material and a hole-property material.

Electroluminescent device and light-emitting layer and application thereof

An electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nano-crystalline semiconductor material and at least one exciplex; an emission spectrum of the exciplex is at least partially overlapped with an excitation spectrum of the nano-crystalline semiconductor material; and the attenuation life of an excited state of the exciplex is longer than the attenuation life of an excited state of the nano-crystalline semiconductor material.

ZINC OXIDE NANOMATERIAL AND PREPARATION METHOD THEREOF AND SEMICONDUCTOR DEVICE
20220336764 · 2022-10-20 ·

A zinc oxide (ZnO) nanomaterial includes a ZnO nanoparticle and a surface ligand. The surface ligand bonded to the ZnO nanoparticle has a structure of

##STR00001##

R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are independently selected from at least one of hydrogen, alkoxy group with a carbon number of one to three, or amino group. R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 include one to three alkoxy groups with a carbon number of one to three and zero to one amino group.

Copolymer, material for organic electronic element, material for organic electroluminescent element, and organic electroluminescent element

Provided are a copolymer having plural repeating units each having a specific structure, and having a weight-average molecular weight of from 100,000 to 3,000,000; a material for organic electronic devices and a material for organic electroluminescent devices containing the copolymer; a solution containing the copolymer and a solvent; and an organic electroluminescent device using the material for organic electroluminescent devices. The copolymer has not only charge transporting properties but also solubility and is suitable for forming a film according to a coating method. The present invention provides the copolymer, and a material for organic electronic devices and a material for organic electroluminescent devices containing the copolymer, an organic electroluminescent device, and a solution containing the copolymer.

QUANTUM-DOT LIGHT EMITTING DIODE, METHOD OF FABRICATING THE QUANTUM-DOT LIGHT EMITTING DIODE AND QUANTUM-DOT LIGHT EMITTING DISPLAY DEVICE

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
20230171983 · 2023-06-01 ·

The present disclosure provides a light-emitting device, a manufacturing method thereof, and a display device. The light-emitting device includes an anode, a cathode, a light-emitting layer between the anode and the cathode, and a hole transport layer between the anode and the light-emitting layer. The hole transport layer includes a first compound and a second compound, and an absolute value of an energy level of the highest occupied molecular orbital of the second compound is greater than or equal to 5 eV and less than or equal to 6.5 eV.

ORGANOMETALLIC COMPLEXES AS PHOSPHORESCENT EMITTERS IN ORGANIC LEDS

Organic light emitting devices are described wherein the emissive layer comprises a host material containing an emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, and the emissive molecule is selected from the group of phosphorescent organometallic complexes, including cyclometallated platinum, iridium and osmium complexes. The organic light emitting devices optionally contain an exciton blocking layer. Furthermore, improved electroluminescent efficiency in organic light emitting devices is obtained with an emitter layer comprising organometallic complexes of transition metals of formula L.sub.2MX, wherein L and X are distinct bidentate ligands. Compounds of this formula can be synthesized more facilely than in previous approaches and synthetic options allow insertion of fluorescent molecules into a phosphorescent complex, ligands to fine tune the color of emission, and ligands to trap carriers.