A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia: ##STR00001##

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

An organic photodetector including: a substrate; a first electrode arranged on the substrate; a second electrode arranged on the substrate and apart from the first electrode in a first direction crossing a direction perpendicular to the substrate; and an active layer covering the first electrode and the second electrode.

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

##STR00001##

A photoelectric conversion element 10A according to an embodiment of the present disclosure includes: a first electrode 21; a second electrode 23 that is disposed to be opposed to the first electrode 21; and a photoelectric conversion layer 22 that is provided between the first electrode 21 and the second electrode 23. The photoelectric conversion layer 22 includes a hole transporting material as a first organic semiconductor material. The hole transporting material absorbs blue light.

An organic photodetector includes: an anode; a cathode facing the anode; and an active layer disposed between the anode and the cathode and including a first layer and a second layer. The first layer is disposed between the anode and the second layer, the first layer includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer includes the p-type organic semiconductor.

A display device includes a display substrate, a light emitting element layer disposed on a surface of the display substrate and including display pixels, a sensing substrate having a surface attached to another surface of the display substrate, a sensing element layer disposed on another surface of the sensing substrate and including sending pixels that each sense light of a color, and a photorefractive layer disposed on the sensing element layer and including micro lenses.

A display apparatus having improved reflectance includes at least one display element arranged on a substrate; a low reflection layer arranged on the display element and including an inorganic material; an encapsulation layer arranged on the low reflection layer and including a pigment and a first organic material; and a reflection adjusting layer arranged on the encapsulation layer and including a dye and a second organic material.

There are provided a π-conjugated boron compound, an electronic device containing an organic functional layer including the π-conjugated boron compound, a method for producing a triarylborane, and a method for producing a triarylborane intermediate. In the π-conjugated boron compound, a boron atom is bonded to three aromatic groups via three boron-carbon bonds. Bond distances of the three boron-carbon bonds are all 1.48 Å or less.