A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A method of fabricating and controlling a thick-film transducer array for steering and focusing ultrasonic waves within a substrate volume is provided. A ceramic film composition can be coated on a substrate volume in one or more layers. The ceramic film can be masked with a plastic sheet out of which an electrode pattern is cut. Conductive electrode material can be applied to the pattern to create a transducer array that can be polarized with an applied electric field. A method of controlling a thick-film transducer array comprises exciting one or more array elements to generate a wavefield in a substrate volume, the wavefield can be reflected by features within the substrate volume, one or more array elements can receive reflected wavefield signals, and images of the insonified substrate volume can be generated.

According to one embodiment, a method of manufacturing a piezoelectric element, includes forming lower electrodes on an insulating substrate, applying a precursor solution on the insulating substrate and the lower electrodes, drying the precursor solution by firing, thus forming a first precursor layer, patterning the first precursor layer into a shape of a plurality of islands located on the lower electrodes, respectively and crystallizing the island-shaped first precursor layer by firing, thus forming first piezoelectric layers.

According to one embodiment, a method of manufacturing a piezoelectric element, includes forming lower electrodes on an insulating substrate, applying a precursor solution on the insulating substrate and the lower electrodes, drying the precursor solution by firing, thus forming a first precursor layer, patterning the first precursor layer into a shape of a plurality of islands located on the lower electrodes, respectively and crystallizing the island-shaped first precursor layer by firing, thus forming first piezoelectric layers.

Examples disclosed herein relate to an apparatus and method of forming thin film layers on a substrate. A first piezoelectric material layer is deposited on the substrate in a first chamber. The first piezoelectric material layer is formed on the substrate while the substrate is at a first temperature. A second piezoelectric material layer is deposited on the first piezoelectric material layer after cooling the substrate to a second temperature. The second temperature is lower than the first temperature. The first piezoelectric material layer and the second piezoelectric material layer both comprise a first piezoelectric material.

A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

A multi-layered piezoelectric ceramic-containing structure There is provided a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer. There is also provided a method of forming the structure.