H10N30/8542

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
20230053303 · 2023-02-16 · ·

A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

PIEZOELECTRIC DEVICE

A piezoelectric device includes a connection section including a first coupling portion, a second coupling portion, and a bridging portion. The first coupling portion extends along a slit and is connected to one of a pair of beam sections. The second coupling portion extends along the slit and is connected to another of the pair of beam sections. The bridging portion is located between the slit and an opening and is connected to both of the first coupling portion and the second coupling portion. The beam sections are connected to each other in a circumferential direction of a base having an annular shape via the connecting section while each of the beam sections is interposed between the slits extending in intersecting directions.

Heterostructure and method of fabrication
11595020 · 2023-02-28 · ·

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

CERAMIC MATERIAL, METHOD FOR PRODUCING THE CERAMIC MATERIAL, AND ELECTROCERAMIC COMPONENT COMPRISING THE CERAMIC MATERIAL
20180006210 · 2018-01-04 ·

The invention relates to a ceramic material, comprising lead zirconate titanate, which additionally contains K and optionally Cu. The ceramic material can be used in an electroceramic component, for example a piezoelectric actuator. The invention also relates to methods for producing the ceramic material and the electronic component.

DEVICE HAVING A TITANIUM-ALLOYED SURFACE
20180013402 · 2018-01-11 ·

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

Micromachined ultrasound transducer using multiple piezoelectric materials

A transducer includes first and second piezoelectric layers made of corresponding different first and second piezoelectric materials and three or more electrodes, implemented in two or more conductive electrode layers. The first piezoelectric layer is sandwiched between a first pair of electrodes and the second piezoelectric layer is sandwiched between a second pair of electrodes. The first and second pairs of electrodes contain no more than one electrode that is common to both pairs.

ACOUSTIC WAVE DEVICE
20230225215 · 2023-07-13 ·

An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3 or LiTaO.sub.3 and including first and second main surfaces that face each other, an IDT electrode provided on the first main surface of the piezoelectric substrate, and a Li.sub.2CO.sub.3 layer provided on the second main surface of the piezoelectric substrate.

Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate

There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.

VIBRATOR AND VIBRATION WAVE MOTOR

A vibrator includes an electromechanical transducer which is a piezoelectric ceramic made of sodium-potassium niobate metal oxides and whose temperature characteristics of a relative permittivity is 500 [ppm/° C.] or less in absolute value in a temperature range from −40° C. to 170° C., wherein excitation of the electromechanical transducer produces a vibration wave. Another vibrator includes an electromechanical transducer which is a piezoelectric ceramic made of sodium-potassium niobate metal oxides and whose temperature characteristics of a relative permittivity is 390 [ppm/° C.] or less in absolute value in a temperature range from 0° C. to 60° C., wherein excitation of the electromechanical transducer produces a vibration wave.

Assembly of piezoelectric material substrate and support substrate, and method for manufacturing said assembly

A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.