H10N30/8548

MULTI-LEVEL MULTIFERROIC MEMORY DEVICE AND RELATED METHODS
20230240149 · 2023-07-27 ·

An electronic device may include a first electrode, a first magnetostrictive layer coupled to the first electrode, a plurality of alternating ferromagnetic and insulating layers stacked above the first magnetostrictive layer, a second electrode electrically coupled to an intermediate ferromagnetic layer in the stack of ferromagnetic and insulating layers, a second magnetostrictive layer above the stack of ferromagnetic and insulating layers, and a third electrode electrically coupled to the second magnetostrictive layer. At least one ferromagnetic layer below the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a first voltage applied across the first and second electrodes, and at least one ferromagnetic layer above the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a second voltage applied across the second and third electrodes.

APPARATUS AND VIBRATION GENERATING APPARATUS
20230222986 · 2023-07-13 · ·

An apparatus includes a vibration member and a first cover disposed at a rear surface of the vibration member. The apparatus also includes a first vibration apparatus disposed at a rear surface of the first cover and configured to vibrate the vibration member. The apparatus includes a first enclosure member disposed at the rear surface of the first cover and at the rear surface of the vibration member. The apparatus also includes a first rear vibration member disposed at the first enclosure member.

SEMICONDUCTOR SUBSTRATE WITH OXIDE SINGLE CRYSTAL HETEROSTRUCTURES, MANUFACTURING METHOD THEREOF AND ELECTRONIC DEVICE USING THE SAME

A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.

METHOD FOR MANUFACTURING DEVICE COMPRISING HALIDE PEROVSKITE ACTIVE LAYER, AND POWER GENERATION DEVICES

A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

Microelectromechanical (MEMS) scanners for scanning laser devices
11513341 · 2022-11-29 · ·

The embodiments described herein include scanners that can provide improved scanning laser devices. Specifically, the embodiments described herein provide scanners with a modular construction that includes one or more separately formed piezoelectric actuators coupled to a microelectromechanical system (MEMS) scan plate, flexure structures, and scanner frame. Such modular scanners can provide improved scanning laser devices, including scanning laser projectors and laser depth scanners, LIDAR systems, 3D motion sensing devices, gesture recognition devices, etc.

Transparent electrostrictive actuators

An optical element includes a primary electrode, a secondary electrode overlapping at least a portion of the primary electrode, and an electrostrictive ceramic layer disposed between and abutting the primary electrode and the secondary electrode, where the electrostrictive ceramic may be characterized by a relative density of at least approximately 99%, an average grain size of at least approximately 300 nm, a transmissivity within the visible spectrum of at least approximately 70%, and bulk haze of less than approximately 10%. Optical properties of the electrostrictive ceramic may be substantially unchanged during the application of a voltage to the electrostrictive ceramic layer and the attendant actuation of the optical element.

Method and system to prevent depoling of ultrasound transducer

An ultrasound system, probe and method are provided. The ultrasound system includes a transducer with piezoelectric transducer elements polarized in a poling direction. A bipolar transmit circuit is configured to generate a transmit signal having first and second polarity segments. The first and second polarity segments have corresponding first and second peak amplitudes. A bias generator is configured to generate a bias signal in a direction of the poling direction. The bias signal is combined with the transmit signal to form a biased transmit signal that is shifted in the direction of the poling direction and still includes both of positive and negative voltages over a transmit cycle.

Piezoelectric-triboelectric heel charger to generate electricity from locomotion using level mechanism and mechanical SSHI boosting circuit

The disclosure provides an electricity generating insert for a piece of footwear, the insert can be removably placed in the heel portion, e.g. under the insole. The insert comprises a multilayer piezoelectric stack that alternatively flexes under the compression-decompression that occurs during locomotion, which flexing causes friction in the stack to generate electricity capable of charging electronic devices and the like, e.g. via a port on the footwear.

Piezoelectric member, ultrasonic oscillation element, ultrasonic probe, ultrasound diagnostic system, and method for producing piezoelectric member
11575080 · 2023-02-07 · ·

A piezoelectric member including metal electrodes with improved adhesiveness to piezoelectric elements is to be provided. A piezoelectric member 102 includes a piezoelectric element 21, and a pair of electrodes 41, 42 respectively formed on a pair of opposing surfaces 21b, 21c of the piezoelectric element 21. The electrodes 41, 42 includes: a base film 41a that is formed on the opposing surfaces 21b, 21c of the piezoelectric element 21 and contains a thiol group; a metal adhesive film 41b formed on the base film 41a; and an electrode film 41c that is formed on the metal adhesive film 41b and is for applying voltage to the piezoelectric element 21. The metal adhesive film 41b is formed with a different material from the electrode film 41c, and has a thickness of 1 to 10 nm.

PHYSICAL VAPOR DEPOSITION OF PIEZOELECTRIC FILMS

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.