A graphene wiring structure of an embodiment has a multilayered graphene having a plurality of planar graphene sheets laminated, and a first interlayer substance being a metal oxyhalide between the plurality of planar graphene sheets.

A transistor. In some embodiments, the transistor includes a first superconducting source-drain, a second superconducting source-drain, a graphene channel including at least a portion of a graphene sheet, and a conductive gate. The first superconducting source-drain, the second superconducting source-drain, and the graphene channel together form a Josephson junction having a critical current. The graphene channel forms a current path between the first superconducting source-drain and the second superconducting source-drain. The conductive gate is configured, upon application of a electric field across the conductive gate and the graphene channel by applying a voltage, to modify the critical current.

A superconductor device includes a low-dimensional material with a critical temperature higher than a critical temperature corresponding to a bulk form of the low-dimensional material. The low-dimensional material can include shape and structural modifications of a low-dimensional material. The superconductor device can include various conformational arrangements of the low-dimensional material such as nanoribbons, nanotubes, or helices. The superconductor device can include functional groups, such as hydrogen, attached to the low-dimensional material. The superconductor device can include metallic clusters located in proximity to the low-dimensional material. The superconductor device can include a low-dimensional material which is a monolayer, bilayer or multilayer.

Superconductive fullerenes, methods for enhancing characteristics of superconductive fullerenes and devices incorporating the fullerenes are disclosed. Enhancements can include increase in the critical transition temperature at a constant magnetic field; the existence of a superconducting hysteresis over a changing magnetic field; a decrease in the stabilizing magnetic field required for the onset of superconductivity; and/or an increase in the stability of superconductivity over a large magnetic field. The enhancements can be brought about by transmitting electromagnetic radiation to the superconductive fullerene such that the electromagnetic radiation impinges on the fullerene with an energy that is greater than the band gap of the fullerene.

A graphene wiring structure of an embodiment has a multilayered graphene having a plurality of planar graphene sheets laminated, and a first interlayer substance being a metal oxyhalide between the plurality of planar graphene sheets.

Superconductive fullerenes, methods for enhancing characteristics of superconductive fullerenes and devices incorporating the fullerenes are disclosed. Enhancements can include increase in the critical transition temperature at a constant magnetic field; the existence of a superconducting hysteresis over a changing magnetic field; a decrease in the stabilizing magnetic field required for the onset of superconductivity; and/or an increase in the stability of superconductivity over a large magnetic field. The enhancements can be brought about by transmitting electromagnetic radiation to the superconductive fullerene such that the electromagnetic radiation impinges on the fullerene with an energy that is greater than the band gap of the fullerene.

Methods for enhancing characteristics of superconductive fullerenes and devices incorporating the fullerenes are disclosed. Enhancements can include increase in the critical transition temperature at a constant magnetic field; the existence of a superconducting hysteresis over a changing magnetic field; a decrease in the stabilizing magnetic field required for the onset of superconductivity; and/or an increase in the stability of superconductivity over a large magnetic field. The enhancements can be brought about by transmitting electromagnetic radiation to the superconductive fullerene such that the electromagnetic radiation impinges on the fullerene with an energy that is greater than the band gap of the fullerene.