A method of switching between first and second states of a van der Waals heterostructure, vdWH, memory device, a vdWH memory device, and a method of fabricating a vdWH memory device. The vdWH memory device comprises a first two-dimensional, 2D, material; and a second 2D material, wherein, in a first storage state of the memory device, an interface between the first and second 2D material comprises interfacial states; and wherein, in a second storage state of the memory device, interfacial states are modulated compared to the first memory state.

A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi.sub.2Se.sub.3/WS.sub.2 at room temperature, comprising the steps of applying a laser to the Bi.sub.2Se.sub.3/WS.sub.2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi.sub.2Se.sub.3/WS.sub.2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi.sub.2Se.sub.3/WS.sub.2 heterostructure at room temperature.

Disclosed is a synaptic device, a reservoir computing device using the synaptic device, and a reservoir computing method using the reservoir computing device. The synaptic device includes a substrate and a plurality of units cells on the substrate, wherein the unit cells each include a channel layer and a first electrode and second electrode intersecting the channel layer, wherein the first electrode and the second electrode are spaced apart from each other, and define a gap region exposing a portion of the channel layer, and the channel layer includes a 2-dimensional semiconductor material or a 2-dimensional ferroelectric material.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

Described is a method comprising directing an ultra-low voltage electron beam to a surface of a first insulating layer. The first insulating layer is disposed on a second insulating layer. The method includes modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property.

A memory structure comprises a ReRAM module embedded in a substrate. An insulative layer is formed on the substrate. A first electrode is located on the insulative layer. The first electrode is proximately connected to a first end of the ReRAM module and comprises a first surface area. A second electrode is located on the insulative layer. The second electrode is proximately connected to a second end of the ReRAM module. The second electrode comprises a second surface area, a plasma-interacting component, and a resistive component. The resistive component is located between the plasma-interacting component and the ReRAM module. A ratio of the first surface area to the second surface area creates a voltage between the first electrode and second electrode when the first surface area and second surfaces area are exposed to an application of plasma. The voltage forms a conductive filament in the ReRAM module.

A method of switching between first and second states of a van der Waals heterostructure, vdWH, memory device, a vdWH memory device, and a method of fabricating a vdWH memory device. The vdWH memory device comprises a first two-dimensional, 2D, material; and a second 2D material, wherein, in a first storage state of the memory device, an interface between the first and second 2D material comprises interfacial states; and wherein, in a second storage state of the memory device, interfacial states are modulated compared to the first memory state.

A memory structure comprises a ReRAM module embedded in a substrate. An insulative layer is formed on the substrate. A first electrode is located on the insulative layer. The first electrode is proximately connected to a first end of the ReRAM module and comprises a first surface area. A second electrode is located on the insulative layer. The second electrode is proximately connected to a second end of the ReRAM module. The second electrode comprises a second surface area, a plasma-interacting component, and a resistive component. The resistive component is located between the plasma-interacting component and the ReRAM module. A ratio of the first surface area to the second surface area creates a voltage between the first electrode and second electrode when the first surface area and second surfaces area are exposed to an application of plasma. The voltage forms a conductive filament in the ReRAM module.

An apparatus includes two or more electrically rotatable antennas providing a reconfigurable metasurface, each of the electrically rotatable antennas including a disk of optically tunable material. The apparatus also includes a control circuit including a plurality of switches each coupled to (i) one of a plurality of electrodes, the plurality of electrodes being arranged proximate different portions of at least one surface of each of the disks of optically tunable material and (ii) to at least one of a current source and a ground voltage. The control circuit is configured to modify states of portions of the optically tunable material in each of the disks of optically tunable material utilizing current supplied between at least two of the plurality of electrodes to adjust reflectivity of the portions of the optically tunable material to dynamically reconfigure respective antenna shape configurations of each of the electrically rotatable antennas.

The present disclosure, in some embodiments, relates to a memory device. The memory device includes a dielectric protection layer having sidewalls defining an opening over a conductive interconnect within an inter-level dielectric (ILD) layer. A bottom electrode structure extends from within the opening to directly over the dielectric protection layer. A variable resistance layer is over the bottom electrode structure and a top electrode is over the variable resistance layer. A top electrode via is disposed on the top electrode and directly over the dielectric protection layer.