A memristor material is disclosed which has the chemical formula R.sub.1-xA.sub.xB0.sub.3, wherein R is one of Eu, Gd, Tb, Nd, A is one of Ca, Sr, Ba, B is one of Mn, Co, Ni, and x is larger than 0 but smaller than 1, a preferred example being Gd.sub.1-xCa.sub.xMn0.sub.3 (GCMO) with x not less than 0.2 to obtain practical resistance switching ratios. A memristor can be manufactured by pulsed laser deposition using a sintered target of said material.

A memory device includes at least one bit line, at least one word line, and at least one memory cell. The memory cell includes a first transistor, a plurality of data storage elements, and a plurality of second transistors corresponding to the plurality of data storage elements. The first transistor includes a gate electrically coupled to the word line, a first source/drain, and a second source/drain. Each data storage element among the plurality of data storage elements and the corresponding second transistor are electrically coupled in series between the first source/drain of the first transistor and the bit line.

An electrical device comprising a reconfigurable integrated circuit that includes paired top electrodes and bottom electrodes separated from each other by an active layer.

A device for implementing spike-timing-dependent plasticity is provided. The device includes a phase-change element, first and second electrodes disposed respective first and second surfaces of the phase-change element. The phase-change element includes a phase-change material with an inverse resistivity characteristic. The first electrode includes a first heater element, and a first electrical insulating layer which electrically insulates the first resistive heater element from the first electrode and the phase-change element. The second electrode includes a second resistive heater element, and a second electrical insulating layer which electrically insulates the second resistive heater element from the second electrode and the phase-change element.

Selector switch provided with: a structure based on at least one phase change material placed between a first conducting element and a second conducting element, the phase change material being capable of changing state, means of heating the phase change material provided with at least one first heating electrode and at least one other heating electrode, the structure based on a phase change material being configured to form a confined active zone of the phase change material at a distance from the conducting elements.

An ultra-high-density vertical cross-point array comprises a plurality of horizontal line layers having horizontal lines interleaved with a plurality of vertical lines arranged in rows and columns. The vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each consecutive pair of horizontal lines in each horizontal line layer. Each vertical line comprises a center conductor surrounded by a single or multi-layered memory film. Accordingly, when interleaved with the horizontal lines, two-terminal memory cells are integrally formed between the center conductor of each vertical line and each crossing horizontal line. By configuring the vertical and horizontal lines so that a row of vertical lines is positioned between each consecutive pair of horizontal lines, a unit memory cell footprint of just 2 F.sup.2 may be realized.

The disclosure relates to a memory cell formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of a semiconductor, the memory cell comprising a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element, the gate being formed on the active layer and having a lateral flank covered with a second insulating layer, the variable-resistance element being formed by a layer of variable-resistance material, deposited on a lateral flank of the active layer in a first trench formed through the active layer along the lateral flank of the gate, a trench conductor being formed in the first trench against a lateral flank of the layer of variable-resistance material.

A semiconductor memory device disposed over a substrate includes a common electrode, a selector material layer surrounding the common electrode, and a plurality of phase change material layers in contact with the selector material layer.

A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element includes a first carbon-containing electrode comprising carbon and a metal, a second carbon-containing electrode comprising the carbon and the metal, and an ovonic threshold switch material portion located between the first electrode and the second electrode.

A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.