A nanodevice capable of controlling the state of electric charge of a metal nanoparticle is provided. The device includes: nanogap electrodes 5 including one electrode 5A and the other electrode 5B disposed so as to have a nanosize gap in between; a nanoparticle 7 placed between the nanogap electrodes 5; and a plurality of gate electrodes 9. At least one of the plurality of gate electrodes 9 is used as a floating gate electrode to control the state of electric charge of the nanoparticle 7, which achieves a multivalued memory and rewritable logical operation.

Quantum dragon materials and devices have unit (total) transmission of electrons for a wide range of electron energies, even though the electrons do not undergo ballistic propagation, when connected optimally to at least two external leads. Quantum dragon materials and devices enable embodiments as quantum dragon electronic or optoelectronic devices, including field effect transistors (FETs), sensors, injectors for spin-polarized currents, wires having integral multiples of the conductance quantum, and wires with zero electrical resistance. Methods of devising such quantum dragon materials and devices are also disclosed.

Plasmonic graphene is fabricated using thermally assisted self-assembly of plasmonic nanostructure on graphene. Silver nanostructures were deposited on graphene as an example.

The present invention relates to near-infrared quantum emitters, and in particular carbon nanostructures with chemically incorporated fluorescent defects, and methods of synthesizing near-infrared emitting nanostructures.

The invention relates to a radiation source, comprising at least one semiconductor substrate, on which at least two field-effect transistors are formed, which each contain a gate electrode, a source contact, and a drain contact, which bound a channel, wherein the at least two field-effect transistors are arranged adjacent to each other on the substrate, wherein each field-effect transistor has exactly one gate electrode and at least one source contact and/or at least one drain contact is arranged between two adjacent gate electrodes, wherein a ballistic electron transport can be formed in the channel during operation of the radiation source. The invention further relates to a method for producing electromagnetic radiation having a vacuum wavelength between approximately 10 μm and approximately 1 mm.

A system, method, diagnostic and container delivery system for manipulating a target, by manipulating with the quantum coherence of the target. The method includes identifying intrinsic parameters of the target and determining target-tuned design factors based at least partially on the intrinsic parameters. Target-tuned electrons and fields are generated based in part on the target-tuned design factor. The target-tuned electrons and fields are defined by discrete quantized energy levels. The method may include preparing a container to carry the unquantized target-tuned electrons, the container being composed of superconductor quantum dots. The unquantized target-tuned electrons are transferred to the container to form target-tuned artificial atoms having quantized target-tuned electrons, which may be delivered to the target as a manipulating agent. Alternatively, the unquantized target-tuned electrons may be delivered directly to the subject.

A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.

The film structure according to an embodiment of the present invention includes at least one active monolayer having an energy level quantized in at least one axial direction and at least one barrier alternately stacked with the at least one active monolayer. Current flows through the active monolayer, and the current flow may be limited by the quantized energy level.

A single electron transistor conjugated to a bacteriophage form a detectable probe where an RF signal identify the location of such probe at the site of specific biological matrix and provide a unique electronic signal such as a Coulomb Staircase and where such signal act as a diagnostic beacon and where such probe and a detector form a mesoscopic detector. The detector uses: a bioprobe containing the phage with its conjugated SET and the properties of the phage specificity; phage mobility within the biological environment and the phage ability to act as a carrier for the SET; and the SET's ultimate use as a beacon for the detection.

A device having a semiconductor nanomaterial surface, formed on a dielectric layer, having a conductive material under the dielectric layer, wherein a potential across the dielectric modified an absorption property of the semiconductor nanomaterial. A method of controlling a property of surface is provided, comprising: providing a device having a semiconductor nanomaterial having the surface, formed on a dielectric layer, having a conductive material under the dielectric layer; and controlling an electrostatic field at the semiconductor nanomaterial to modify at least one property of the surface with respect to molecules. The property may be absorption or wetting, for example.