A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.

The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires.

The membrane of a conventional solid-state nanopore device, which is believed to be promising for understanding the structural characteristics of DNA and determining a nucleotide sequence, has been thick, and the accuracy in determining a nucleotide sequence in the DNA chain has been insufficient. A method characterized by forming a membrane by forming a first film on a first substrate having a surface of Si, then forming a hole in the first film in such a manner that the surface of the first substrate is exposed, then forming a second film on the first film and on the surface of the first substrate and then etching the first substrate with a solution which does not remove the second film.

Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.

A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.

Provided is a process for producing a wavelength conversion member which can suppress the reaction between inorganic nanophosphor particles and glass to suppress the deterioration of the inorganic nanophosphor particles, and the wavelength conversion member. The process for producing a wavelength conversion member includes the steps of: preparing inorganic nanophosphor particles 1 with an organic protective film formed on respective surfaces thereof; and mixing the inorganic nanophosphor particles 1 with glass powder and firing a resultant mixture in a temperature range where the organic protective films remain as retained films 3.

Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

An apparatus comprising: a channel (4) configured to conduct charge carriers; and a charge carrier generator (22) configured to generate charge carriers for populating the channel, wherein the charge carrier generator is configured for resonance energy transfer (FRET). The charge carrier generator may be a nanoparticle or quantum dot (22), functionalised with at least one moiety (28A, 28B) to enable detection of an analyte. The charge carrier generator may also be a nanoparticle or quantum dot (22) configured to photo-generate charge carriers. The channel (4) may be made of a material having a very high carrier mobility like graphene or carbon nanotubes.

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.