Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.

The present document provides details of a nanostructured material defined by an anodized alumina having a nanostructure with transverse pores that pass through and connect longitudinal pores grown on an aluminum substrate. This document also describes the process for producing said nanostructured material and the possible use thereof as a template or mould for obtaining nanostructures formed by nanowires, which are generated in the cavities or pores of the aforementioned nanostructure of the nanomaterial of the invention. Likewise, this document details the use of the nanostructured anodized alumina material as a mould for producing nanostructures.

In a general aspect, an apparatus can include a substrate and a post disposed on the substrate. The post can include a plurality of nanotubes and extend substantially vertically from the substrate. The post can have an aspect ratio of a height of the post to a diameter of the post of greater than or equal to 25:1.

In a general aspect, an apparatus can include a substrate and a post disposed on the substrate. The post can include a plurality of nanotubes and extend substantially vertically from the substrate. The post can have an aspect ratio of a height of the post to a diameter of the post of greater than or equal to 25:1.

The invention provides a method to form and functionalize monolayers on a silicon-rich silicon nitride surface or a silicon surface formed by a nanopore fabrication method known as dielectric breakdown. Thermal, photochemical and radical processing can be used to hydrosilylate nascent silicon and silicon nitride surfaces with various reagents. The conventional need for hydrofluoric acid etching prior to coupling functional groups to the surfaces is thereby completely avoided.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

This disclosure teaches a method for producing a nano metal mesh. A brittle layer can be deposited onto a flexible substrate, the brittle layer having a thickness on the flexible substrate. The flexible substrate can be bent to produce a plurality of gaps on the brittle material. A material can be deposited at the surface of the flexible substrate filling the gaps of the brittle layer. Then, the brittle layer can be etched from the flexible substrate using an etchant, a nano metal mesh formed by the material previously in the gaps. The disclosure also teaches a nano metal mesh made using this method.