MOS-GATED TRENCH DEVICE USING LOW MASK COUNT AND SIMPLIFIED PROCESSING

Abstract

A trenched, vertical MOS-gated switch is described that uses only three or four masking steps to fabricate. In one embodiment, one mask is used to form first trenches having a first depth, wherein the first trenches are filled with doped polysilicon to form gates to control the conduction of the switch. A second mask is used to form second trenches having a shallower second depth. The second trenches are filled with the same metal used to form the top source electrode and gate electrode. The metal filling the second trenches electrically contacts a top source layer and a body region. A third mask is used to etch the metal to define the source metal, the gate electrode, and floating rings in a termination region surrounding the active area of the switch. An additional mask may be used to form third trenches in the termination region that are deeper than the first trenches.

Claims

1. A process for forming a semiconductor device comprising: providing a starting substrate; epitaxially growing a first layer of a first conductivity type over the substrate, wherein no mask is used; blanket implanting dopants of the first conductivity type into a top surface of the first layer to increase a doping concentration of the first conductivity type near the top surface, wherein no mask is used; blanket implanting dopants of a second conductivity type into the top surface of the first layer to convert the first conductivity type at the top surface to the second conductivity type, wherein no mask is used, the blanket implanting dopants of the second conductivity type forming a second conductivity type layer over the first layer; forming a first masking layer overlying the top surface of the first layer to define first trenches of a first depth; etching into the first layer to form the first trenches of the first depth; forming an oxide on surfaces of the first trenches; at least partially filling the first trenches with a conductive material to at least form gates in an active area of the device, wherein no mask is used; forming a second masking layer overlying the top surface of the first layer to define second trenches of a second depth, shallower than the first depth; depositing a metal layer to fill the second trenches and at least electrically contact the second conductivity layer; forming a third masking layer overlying the metal layer to define a first current-carrying electrode, a gate electrode, and termination structures surrounding the active area; and etching the metal layer to form the first current-carrying electrode, the gate electrode, and the termination structures surrounding the active area.

2. The process of claim 1 wherein the substrate is of the first conductivity type or includes a layer of the first conductivity type on its bottom surface.

3. The process of claim 1 wherein the substrate is of the second conductivity type or includes a layer of the second conductivity type on its bottom surface.

4. The process of claim 1 wherein the substrate is of the second conductivity type and includes a layer of the first conductivity type on its bottom surface.

5. The process of claim 1 wherein the first trenches terminate within the first layer.

6. The process of claim 1 wherein the first trenches terminate within the substrate.

7. The process of claim 1 further comprising: depositing a passivation layer; forming a fourth masking layer overlying the passivation layer to define areas where the metal layer is to be exposed; and etching the passivation layer to expose the areas of the metal layer.

8. The process of claim 1 wherein the first trenches filled with the conductive material form the gates for turning on the device and also form one or more rings in a termination region surrounding the active area for increasing a breakdown voltage of the device.

9. The process of claim 1 further comprising: forming a fourth masking layer overlying the top surface of the first layer to define third trenches of a third depth deeper than the first depth, wherein the third trenches extend through the first layer; etching into the first layer to form the third trenches of the third depth; and at least partially filling the third trenches with the conductive material to at least form gates in a termination region surrounding the active area.

10. The process of claim 1 further comprising: forming a fourth masking layer overlying the top surface of the first layer to define third trenches of a third depth deeper than the first depth, wherein the third trenches extend through the first layer; etching into the first layer to form the third trenches of the third depth; and at least partially filling the third trenches with the conductive material to at least form field limiting rings in a termination region surrounding the active area.

11. The process of claim 10 wherein the metal layer connects the conductive material filling the third trenches to the first layer by the metal layer contacting the conductive material and also filling the second trenches in the first layer.

12. The process of claim 1 wherein the second trenches contain the metal layer to form one or more equi-potential rings around the active area.

13. The process of claim 1 wherein the conductive material comprises polysilicon.

14. The process of claim 1 wherein the semiconductor device comprises one of a vertical MOSFET or an insulated-gate controlled bipolar transistor.

15. The process of claim 1 wherein the semiconductor device comprises an insulated-gate controlled switch.

16. The process of claim 1 wherein the first trenches in the active area comprise current conducting cells in a vertical switch.

17. The process of claim 1 wherein the second trenches extend through the second conductivity layer to electrically contact both the second conductivity layer and the first layer.

18. The process of claim 1 wherein the second trenches terminate within the second conductivity layer.

19. A semiconductor structure comprising: a semiconductor first layer of a first conductivity type grown over a substrate; insulated first trenches within the first layer, and terminating within the first layer, at least partially filled with doped polysilicon, the first trenches having a first depth in an active area to form gates; and insulated second trenches within the first layer filled with a metal, the second trenches having a second depth, shallower than the first depth, to electrically contact source regions.

20. The structure of claim 19 further comprising: insulated third trenches within the first layer at least partially filled with the doped polysilicon, the third trenches having a third depth deeper than the first depth, the third trenches being within a termination region surrounding the active area, wherein the third trenches extend into the substrate.

21. The structure of claim 19 further comprising a second layer of a second conductivity type overlying the first layer of the first conductivity type, wherein the metal filling the second trenches electrically contacts the second layer.

22. The structure of claim 21 wherein the second trenches extend through the second layer so that the metal filling the second trenches electrically contacts both the second layer and the first layer.

23. A semiconductor structure comprising: a semiconductor first layer of a first conductivity type grown over a substrate; a semiconductor second layer of a second conductivity type grown over the first layer; insulated first trenches terminating within the second layer at least partially filled with doped polysilicon, the first trenches having a first depth in an active area to form gates; and insulated second trenches being deeper than the first depth and terminating within the first layer, the insulated second trenches being at least partially filled with doped polysilicon, the second trenches creating isolated regions of the first layer in a termination region surrounding the active area.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0039] FIG. 1 is copied from Applicant's U.S. Pat. No. 8,878,238 and is a cross-section of a vertical switch having insulated trench gates connected in parallel. About eight masks are used to form the device in a conventional way.

[0040] FIG. 2 is a cross-sectional view of a vertical MOS-gated device similar to that of FIG. 1 but formed using only four masking steps.

[0041] FIG. 3 is a top down view of the active area of a die and the termination region (near the edge of the die).

[0042] FIG. 4 illustrates some initial steps in the fabrication process for forming the device of FIG. 2.

[0043] FIG. 5 illustrates some intermediate steps in the fabrication process for forming the device of FIG. 2.

[0044] FIG. 6 illustrates additional intermediate steps in the fabrication process for forming the device of FIG. 2.

[0045] FIG. 7 illustrates additional intermediate steps in the fabrication process for forming the device of FIG. 2.

[0046] FIG. 8 illustrates additional intermediate steps in the fabrication process for forming the device of FIG. 2.

[0047] FIG. 9 illustrates the final steps in the fabrication process for forming the device of FIG. 2.

[0048] FIG. 10 illustrates another embodiment of the invention having deep trenches only in the termination region for spreading the electric field.

[0049] FIG. 11 is a dopant profile in FIG. 1 through the p-well and the n− drift region.

[0050] FIG. 12 is a dopant profile in FIG. 1 through the n+ source region, the p-well, and the n-drift layer.

[0051] FIG. 13 shows the effect of a long diffusion time.

[0052] FIG. 14 shows the desirable effect of a short diffusion time.

[0053] FIG. 15 is a cross-section of another embodiment of a vertical switch that is formed with a p-type epitaxial layer as the body layer, rather than a mask-implanted p-well. No trenches are formed in the termination region.

[0054] FIGS. 16-29 illustrate embodiments where trenches are formed in the termination region for increasing the breakdown voltage in the termination region.

[0055] FIG. 16 shows a dopant profile of FIG. 15, or other embodiments, in the active area having steeper gradients, with less overlap, since there are fewer heating/diffusion steps in the fabrication process.

[0056] FIG. 17 shows the deposition of an oxide layer and a nitride layer over the p− body layer.

[0057] FIG. 18 shows an additional oxide layer and nitride layer deposited and masked to define deep and shallow trench areas.

[0058] FIG. 19 shows trench portions etched using RIE.

[0059] FIG. 20 shows the oxide layer and nitride layer removed, and the same etch process being used to concurrently form shallow trenches in the active area and deep trenches in the termination region.

[0060] FIG. 21 shows gate oxide on the walls of the trenches and polysilicon deposited in the insulated trenches.

[0061] FIG. 22 shows the formation of an oxide mask followed by n-type dopant implantation to form n+ source regions in the active area.

[0062] FIG. 23 shows a different embodiment, where vertical MOSFETs are formed in the active region, since all trenches are deep and extend into the n− drift layer.

[0063] FIG. 24 shows an example of where the n+ source regions are formed by growing an n-type epitaxial layer over the p− body layer, and the n+ layer is then removed over the termination region.

[0064] FIG. 25 shows an alternative embodiment where the n+ source regions are formed by an n-type epitaxial layer, and the n+ layer in the termination region is isolated from the n+ source regions in the active area by deep trenches in the termination region.

[0065] FIG. 26 illustrates the deposition of the source metal on the top surface of the device, which contacts the n+ source regions in the active area.

[0066] FIG. 27 is similar to FIG. 26 except that all the trenches are deep to form vertical MOSFETs in the active area.

[0067] FIG. 28 shows the use of isolated metal portions contacting each isolated p-region and its associated polysilicon in an adjacent deep trench in the termination region for forming equipotential rings surrounding the active area.

[0068] FIG. 29 shows an all-deep trench version of FIG. 28 so all conduction in the active area is via MOSFETs. Further, FIG. 29 shows portions of the epitaxial n+ layer being contacted by metal in the termination region and shorted to adjacent trenched polysilicon to remove charge from the polysilicon. The various n+ regions and p-epitaxial layer portions in the termination region are isolated by the deep trenches surrounding the active area.

[0069] Elements that are the same or equivalent in the various figures may be labeled with the same numeral.

DETAILED DESCRIPTION

[0070] FIG. 2 illustrates an active area 12 of a die and a termination region 14 (near the edge of the die) fabricated using the inventive process. The process will be described with reference to FIGS. 2-9.

[0071] FIG. 3 is a top down view of FIG. 2 with the metal layer removed, where FIG. 2 is taken across line 2-2 of FIG. 3.

[0072] Doped polysilicon 16 within trenches 18 (FIG. 2) are shown as a mesh for forming a two-dimensional array of rectangular cells. The cells are connected in parallel and conduct current vertically to a metal drain (or anode) electrode on the bottom of the die, such as the electrode 103 in FIG. 1. For some devices, the bottom electrode may be referred to as an anode electrode.

[0073] The tops of semiconductor n source regions 20 (for the active area 12) are shown surrounding a shallow trench 22 that contains source metal connectors 24 extending into the P-body region 26 (FIG. 2), for shorting the source to the p− body region 26.

[0074] As shown in FIG. 3, an opening 28 surrounding the active area 12 of the die exposes the polysilicon 16 for being contacted by the gate metal.

[0075] Closer to the perimeter of the die is shown a single ring of a shallow trench 30 for being filled with metal, where there may be additional identical shallow trenches filled with the metal, for forming separate floating equi-potential rings for spreading the electric field.

[0076] The die edge 32 is shown (although there may be additional floating rings of p-well material around the perimeter).

[0077] The cells may instead be parallel linear cells, hexagonal cells, square cells, or other shaped cells.

[0078] The process for forming the device of FIGS. 2 and 3 will now be described with reference to FIGS. 4-10.

[0079] In FIG. 4, a starting wafer 40 may be n-type, depending on the device to be formed. The substrate may instead be p-type. The bottom of the wafer may be heavily doped n+ or p+ and then metallized for forming an anode or drain electrode. In the particular device of FIG. 1, the substrate 104 is p+ type with an anode electrode 103 formed on the bottom.

[0080] The wafer in FIG. 2 is typically purchased already doped N-type.

[0081] Next, as also shown in FIG. 4, an epitaxially grown p-body region 26 is formed. The doping may be during the epi growth, or p-type dopants may be blanket implanted and diffused. No masking steps are required. Since no masking is used, the p-body region 26 may be a continuous layer across the die, unlike the “mask-implanted” p-well 107 in FIG. 1.

[0082] Next, as shown in FIG. 5, additional p-type dopants are implanted and diffused into the top surface of the p-body region 26 to form p+ contact regions 44. Although a p+ continuous layer is initially formed, the p+ layer will be segmented by the later formation of trenches.

[0083] Next, as shown in FIG. 5, n-type dopants are implanted and diffused into the top surface of the p+ contact regions 44 to form and n+ source layer 46. The n+ source layer 46 will later be segmented by the trenches to form the source regions 20 in FIG. 2.

[0084] Next, as shown in FIG. 6, a dielectric layer is formed by growing a thermal oxide layer 48, followed by depositing a silicon nitride layer 50. The dielectric layer is then masked and etched, as the first masking step, to define the gate trenches and termination region trenches that will be filled with polysilicon.

[0085] Next, as shown in FIG. 7, the trenches are etched using RIE, and the masking layer is removed. To protect the trenches, a sacrificial oxide layer may be grown over the exposed silicon, followed by the removal of the silicon nitride layer 50 and the thermal oxide layer 48 in FIG. 6, which also removes the sacrificial oxide.

[0086] A thermal oxidation step is then performed to grow thin gate oxide 54 on the exposed silicon surfaces in the trenches 52.

[0087] Doped polysilicon 16 is then blanket-deposited to fill the trenches. The polysilicon and the thermal oxide on the top surface of the wafer are then blanket-etched away, leaving the gate oxide and polysilicon only in the trenches 52, shown in FIG. 8. No masking steps are used.

[0088] In FIG. 9, a chemical vapor deposition (CVD) process is used to deposit a layer of oxide 56, and the oxide 56 is densified using a conventional process to further harden it and increase its dielectric strength.

[0089] Next, a contact mask is used to define areas of the oxide 56 and underlying semiconductor material to be etched to form the shallow trenches 58. Some of the shallow trenches 58 will be used for contacting the p-body region 26 with the source metal 60, and the shallow trenches 58 in the termination region will be used for forming floating wells (rings around the active region) and equi-potential rings. This is only the second mask process.

[0090] Next, a layer of metal is deposited and then masked to define the source metal 60, the gate metal 62, the metal 64 in the termination region for contacting the floating wells 66 (FIG. 2), and equi-potential rings 68. This is the third mask process.

[0091] Portions of the metal layer filling the shallow trenches 58 contact the sides of the source regions 20 for good electrical contact.

[0092] The gate metal 62 contacts a gate runner 63, used for electrically contacting all the polysilicon in the gate trenches.

[0093] An optional passivation layer 70 is used to protect the layers and expose the source and gate pads. The passivation layer 70 is then masked and etched to expose the pads. This an optional fourth mask process, which is not used in FIG. 1. Accordingly, the structure of FIG. 1 may be formed using only three masks.

[0094] Each floating well 66 (or field limiting ring) comprises a trench filled with polysilicon, where the polysilicon is electrically connected to the p-body region 26 near the inner wall of the trench via the metal layer extending into the shallow trench 58. The number of these floating wells 66 determines the voltage that can be sustained by the device. In the device of FIG. 2, in its off state, the lightly doped p-body region 26 below each floating well 66 is depleted by the applied voltage, guaranteeing that there is no current flow between the rings. The metal bridge between the polysilicon and the p-body region 26 prevents unwanted charge from accumulating in the trenches.

[0095] The metal connected to the floating wells 66 may be extended over the silicon surface (as shown in FIG. 2) to act as a field plate.

[0096] The equi-potential rings 68 are just separate floating metal rings within the shallow trenches along the perimeter of the die surrounding the active region 12 to further increase the breakdown voltage.

[0097] The substrate 40 may have a bottom p+ layer, or the substrate itself may be p+ with an n-epi layer over it, to form a stacked npnp structure for a gate-controlled thyristor or other switch, such as the device of FIG. 1.

[0098] If the substrate has a bottom n+ layer and the gate trenches extend all the way into the n-substrate 40, a simple vertical MOSFET is formed, where a positively biased gate creates an n-channel between the n+ source regions 20 and the n− substrate 40 for vertical current flow.

[0099] Besides the structure only requiring three or four masks, there is no high temperature step required after the gate oxide 54 is formed, avoiding the possibility of defects from heat cycling.

[0100] In another embodiment, instead of shorting the source metal 60 to the p-body region 26 using the shallow trenches, the trench depth could be made even shallower so the source metal 60 only extends into the source regions 46. The source metal 60 directly contacts the sides of the n+ source regions 20. This technique may be used if it is not desired to provide a short to the p-body 26 in every cell.

[0101] FIG. 10 illustrates a modification to the device of FIG. 2 in that the trenches 80 in the termination region 14 are deep and extend into the n− substrate 40. This causes a positively biased gate (above the threshold voltage) to create a conductive channel between the n+ source region 82 and the n− substrate 40 when the device is on, to cause a small current to flow directly between the source region 82 and the n− substrate 40, unlike the active area 12, where bipolar transistor action is primarily used for current flow. This configuration forms an IGBT at the edge of the active area. Since the bipolar transistor action in the active area 12 results in a lower on-resistance, the relative current flow due to the deep trenches 80 is low but it prevents a build-up of carriers in the termination region for more rapid turn off of the device. It may also increase the breakover voltage of the termination region 14 when compared to the active area 12.

[0102] Additionally, the gate runner trench 84 (used for electrically contacting all the polysilicon in the gate trenches) may also be made deep, as shown in FIG. 10.

[0103] The deep trenches 80 may also be used to form IGBT devices (insulated gated bipolar transistors) along the perimeter as well as forming floating p-regions due to the continuous trenches 80 effectively isolating rings of the p-body region 26. Such techniques can be applied to any trenched MOS device to achieve various additional functions and capabilities as well as increasing the breakdown voltage and improving turn off time.

[0104] The following description is directed to forming an IGBT structure in the termination region surrounding the active area, using a slightly modified process, which results in the IGBT increasing the breakdown voltage in the termination region, so any breakdown will occur in the active area where the metal electrodes above and below the active area can conduct the higher currents during a breakdown event to avoid damage to the device.

[0105] Referring back to the prior art FIG. 1, in a conventional fabrication process used to form the device, p-type dopants are implanted in the n− drift layer 106 (using a mask) to form the p-well 107, and n-type dopants are then implanted into the p-well 107 (using another mask) to form the n+ source regions 129. These dopants are diffused using heat, which may adversely affect other materials in the device. The combination of the p-well 107 and the n+ source regions 129 forms a vertical DMOS along the sidewall of the gate trench.

[0106] FIG. 11 is a dopant profile in FIG. 1 through the p-well 107 and the n− drift region 106, and FIG. 12 is a dopant profile in FIG. 1 through the n+ source region 129, the p-well 107, and the n− drift layer 106.

[0107] FIG. 13 is generic and shows the effect of a long diffusion time, resulting in the both the n-type dopants and the p-type dopants diffusing longer distances, resulting in significant overlap and less predictable device characteristics. FIG. 14 shows the desirable effect of a short diffusion time, where there is less overlap and more predictable device characteristics.

[0108] As previously described, the low mask-count technique of the present invention obviates the need for such implantation and multiple dopant diffusion steps, resulting in very well-defined conductivity regions and highly reproducible devices.

[0109] FIG. 15 is a cross-section of a vertical switch that may be formed with a process similar to that shown in FIGS. 2-9, where the p-body region 26 is formed without masking. FIG. 15 differs from the device of FIG. 9 in that the n− drift layer 106 is grown over an n-buffer layer 105, which is grown over a p++ substrate 104, where a metal anode electrode 103 contacts the bottom of the substrate 104. This forms a vertical npnp structure, where a sufficiently positive gate voltage initiates the turn on of the npnp structure for a very low on-voltage, as previously described. FIG. 15 also differs from FIG. 9 in the metal-to-source contact structure.

[0110] The combination of time and temperature that a wafer sees during the epitaxial deposition process can be quite small compared to that used in the formation of a p-well using the conventional selective (masked) dopant introduction and diffusion. This difference means that it is possible to have a smaller effect on the doping concentrations in regions that are already present when the epi p-well process is used to fabricate a p-well.

[0111] This smaller effect on previously existing dopant profiles means that dopant profiles with steeper gradients that have less overlap can be formed, as shown in FIG. 16, where the relative dopant concentrations are shown for the n+ source regions 20, the p+ contact regions 44, the p-body region 26, and the n− drift layer 106 (also referred to as an n-epi base).

[0112] The doping profile of the epi p− body region 26 can be varied greatly. It is possible to grow a p− body region with a uniform doping profile or one with a vertical variation in dopant atom concentration throughout the epitaxial layer.

[0113] An epi p− body region 26 with a uniform vertical doping concentration is of particular interest, since it can be used in combination with a more heavily doped p+ body contact regions 44 (FIG. 15) and an n+ source region 20 to produce the structure shown in FIG. 15. The presence of the shallow, more heavily doped p+ body contact regions 44 below the n+ source regions 20 allows the VT (turn-on voltage threshold) of the n-channel MOSFET along the sidewall of the trench to be set by the net p-type dopant concentration that is from both the epi p− body region 26 and the p+ body contact region 44. The remainder of the epi p− body region 26 region that is adjacent to the gate has its surface inverted before the VT of the MOSFET is reached.

[0114] The IGTO structure of FIG. 15 shows the use of an n− drift layer 106 and an n-type buffer layer 105, both of which are epitaxially grown over a p++ substrate 104. It is also within the scope of this invention to use an n-type starting wafer and to introduce both n-type and p-type dopant atoms to form the n-type buffer layer 105 and a p+ emitter layer on the back of the wafer. This structure is referred to as a “field stop”, “thin anode”, or “transparent emitter” structure.

[0115] The use of the epi p− body region 26 may impact the remainder of the IGTO or IGBT. Specifically, it is no longer possible to use diffused “field-limiting rings” to obtain the needed high voltage breakdown in the termination region. To address this concern, a new high voltage termination structure that is compatible with the epi p− body region process is described below.

[0116] The process flow described below provides trenches having two different depths. The shallow trenches in the active region of the IGTO are the same as in the above-described IGTO process. The deeper trenches in the termination region provide isolated p-type regions which, with the correct geometry, can be used as field limiting rings.

[0117] FIG. 17 shows the deposition of an oxide layer 200 and a nitride layer 202 over the p-body layer 26. The layers are then masked and etched to define trench areas.

[0118] In FIG. 18, an additional oxide layer 204 and nitride layer 206 are deposited and masked to define deep and shallow trench areas.

[0119] In FIG. 19, partial trenches 208 are etched using RIE, which partially forms the deep trenches in the termination region. The active area is covered by the oxide layer 204 and nitride layer 206.

[0120] In FIG. 20, the oxide layer 204 and nitride layer 206 are removed, and the same etch process is used to concurrently form shallow trenches 210 in the active area, and deep trenches 212 in the termination region. The shallow trenches 210 terminate in the p-body layer 26, while the deep trenches 212 terminate in the n− drift layer 106.

[0121] In FIG. 21, a sacrificial oxide layer (not shown) is grown and etched, followed by growing a gate oxide 214 on the walls of the trenches 210 and 212. Polysilicon 216 is then deposited in the trenches and etched back. Another layer of oxide 218 is grown over the polysilicon 216.

[0122] In FIG. 22, the oxide layer 200 and nitride layer 202 are removed, the polysilicon 216 is further etched, and a layer of oxide 220 is deposited over the termination region and over the tops of the polysilicon in the active area. N-type dopants are then implanted to form n+ source regions 222 in the active area.

[0123] The deep trenches in the termination region create isolated p-regions, which act as field limiting rings to spread the electric field to increase the breakdown voltage in the termination region when the device is off. Thus, breakdown will first occur in the active region, which is better equipped to handle the high currents during breakdown due to the proximity of the metal electrodes. The polysilicon in the deep trenches is floating.

[0124] In other embodiments, polysilicon or metal field plates may be connected to one or more of the polysilicon in the deep trenches, or two or more of the filled trenches may be electrically connected together. The spacing and widths of the deep trenches may be selected to improve device performance.

[0125] Instead of the n-type dopants being implanted in the surface, the n+ source regions 222 may be an epitaxially grown layer and doped during the growth process.

[0126] FIG. 23 shows a different embodiment, where vertical MOSFETs are formed in the active region, since all trenches are deep and extend into the n− drift layer 106. The termination region forms a vertical pnp structure. Unlike FIG. 22, where the “shallow” trenches (gates) in the active area terminate in the p-body layer 26, resulting in bipolar transistor action conduction when the device is on, the structure in FIG. 23 results in pure MOSFET conduction when the device is on due to a vertical n-channel being created along the gates between the n+ source regions 222 and the n− drift layer 106. The on-resistance is not as good as the on-resistance of the FIG. 22 embodiment. The deep trenches in the termination region form isolated p-regions for increasing the breakdown voltage in the termination region.

[0127] FIG. 24 shows an example of where the n+ source regions 222 are formed by growing an n+ doped epitaxial layer over the entire width of the p− body layer 26 (including in the termination region). The n+ epitaxial layer is then etched away in the termination region.

[0128] FIG. 25 shows an alternative embodiment where the n+ source regions 222 are formed by an n-type epitaxial layer 226, and the n+ layer 226 in the termination region is isolated from the n+ source regions 222 in the active area by the deep trenches in the termination region isolating the various areas. The n+ layer 226 in the termination region will not be contacted by any source metal (FIG. 26), since there are no openings in the oxide over the termination region.

[0129] FIG. 26 illustrates the deposition of the source metal 228 on the top surface of the device, which contacts the n+ source regions 222 in the active area. The layer of oxide 220 in the termination region insulates the source metal 228 from the termination region. In FIG. 26, a p-type or n-type region 232, depending on the type of device, may be used to electrically contact the outer isolated region in the termination region, along the scribe line, to form an equi-potential ring surrounding the device at the edge of the die. The region 232 may be biased at the same voltage as the bottom electrode. In FIG. 26, shallow trenches are employed in the active area for bipolar transistor action conduction.

[0130] FIG. 27 is similar to FIG. 26 except that all the trenches are deep to form vertical MOSFETs in the active area.

[0131] FIG. 28 shows the use of isolated metal portions 234 contacting each isolated p-region and its associated polysilicon in an adjacent deep trench in the termination region for forming equi-potential rings surrounding the active area for increasing the breakdown voltage in the termination region. This technique prevents the accumulation of charge on any trenched floating polysilicon.

[0132] FIG. 29 shows an all-deep trench version of FIG. 28 so all conduction in the active area is via MOSFETs. Further, FIG. 29 shows portions of the epitaxial n+ layer 226 being contacted by metal in the termination region and shorted to adjacent trenched polysilicon to remove charge from the polysilicon.

[0133] While particular embodiments of the present invention have been shown and described, it will be obvious to those skilled in the art that changes and modifications may be made without departing from this invention in its broader aspects and, therefore, the appended claims are to encompass within their scope all such changes and modifications as fall within the true spirit and scope of this invention.