METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER

Abstract

The present invention provides a method for plasma dicing a substrate. The substrate is placed onto a support film on a frame to form a work piece. A die attach film is adhered to the substrate. A process chamber having a plasma source is provided. The work piece is placed into the process chamber. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the die attach film while the die attach film is exposed to the generated plasma.

Claims

1. A method of dicing a substrate, the method comprising: providing a plasma process chamber having a plasma source; providing a work piece support within the plasma process chamber; providing a work piece having a support film, a frame and the substrate; adhering a die attach film to the substrate of the work piece; placing the work piece onto the work piece support; generating a plasma from the plasma source in the plasma process chamber; exposing at least a portion of the die attach film to the generated plasma; generating a byproduct from the exposed portion of the die attach film; and processing the work piece using the generated plasma and the byproduct generated from the exposed portion of the die attach film.

2. The method according to claim 1 wherein the substrate further comprising a compound semiconductor.

3. The method according to claim 1 further comprising monitoring a change in a composition of the die attach film during the exposure of the die attach film to the generated plasma.

4. The method according to claim 3 further comprising modifying the processing of the work piece based on the composition of the die attach film.

5. The method according to claim 1 wherein the die attach film further comprising a plurality of layers.

6. A method of dicing a substrate, the method comprising: providing a plasma process chamber having a plasma source; providing a work piece support within the plasma process chamber; providing a work piece having a support film, a frame and the substrate; adhering a die attach film to the substrate of the work piece; placing the work piece onto the work piece support; generating a plasma from the plasma source in the plasma process chamber; exposing at least a portion of the die attach film to the generated plasma; generating a byproduct from the exposed portion of the die attach film; etching a surface of the substrate of the work piece using the generated plasma to remove material from said surface of the substrate and provide exposed sidewall surfaces; and depositing a passivation layer comprising the byproduct generated from the die attach film onto the exposed sidewall surfaces.

7. The method according to claim 6 wherein the etch step is an anisotropic etch.

8. The method according to claim 6 wherein the substrate further comprising a compound semiconductor.

9. The method according to claim 6 further comprising monitoring a change in a composition of the die attach film during the exposure of the die attach film to the generated plasma.

10. The method according to claim 9 further comprising modifying the etching of the substrate based on the composition of the die attach film.

11. A method of dicing a substrate, the method comprising: providing a plasma process chamber having a plasma source; providing a work piece support within the plasma process chamber; providing a work piece having a support film, a frame and the substrate; adhering a die attach film to the substrate of the work piece; placing the work piece onto the work piece support; generating a plasma from the plasma source in the plasma process chamber; exposing at least a portion of the die attach film to the generated plasma; generating a byproduct from the exposed portion of the die attach film; and etching a surface of the substrate of the work piece using a plasma etch gas and the byproduct generated from the die attach film to remove material from said surface of the substrate and provide exposed sidewall surfaces.

12. The method according to claim 11 wherein the substrate further comprising a compound semiconductor.

13. The method according to claim 11 further comprising monitoring a change in a composition of the die attach film during the exposure of the die attach film to the generated plasma.

14. The method according to claim 13 further comprising modifying the etching of the substrate based on the composition of the die attach film.

15. A method of dicing a substrate, the method comprising: providing a plasma process chamber having a plasma source; providing a work piece support within the plasma process chamber; providing a work piece having a support film, a frame and the substrate, the substrate having a top surface and a bottom surface, the top surface of the substrate having at least one die region and at least one street region; adhering a film to the substrate of the work piece; placing the work piece onto the work piece support; generating a plasma from the plasma source in the plasma process chamber; exposing at least a portion of the film to the generated plasma; generating a byproduct from the exposed portion of the film; and processing the work piece using the generated plasma and the byproduct generated from the exposed portion of the film.

16. The method according to claim 15 wherein the film further comprising a polymer containing film.

17. The method according to claim 16 wherein the polymer containing film is adhered to the top surface of the substrate.

18. The method according to claim 15 wherein the substrate further comprising a compound semiconductor.

19. The method according to claim 15 further comprising monitoring a change in a composition of the film during the exposure of the film to the generated plasma.

20. The method according to claim 19 further comprising modifying the processing of the work piece based on the composition of the film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0033] FIG. 1 is a top down view of a semiconductor substrate illustrating individual devices separated by streets;

[0034] FIG. 2 is a cross-sectional view of a semiconductor substrate illustrating individual devices separated by streets;

[0035] FIG. 3 is a cross-sectional view of a semiconductor substrate mounted to tape and a frame;

[0036] FIG. 4 is a cross-sectional view of a semiconductor substrate mounted to tape and a frame being etched by a plasma process;

[0037] FIG. 5 is a cross-sectional view of separated semiconductor devices mounted to tape and a frame;

[0038] FIG. 6 is a cross-sectional view of a vacuum processing chamber;

[0039] FIG. 7 is a cross-sectional of a wafer/frame in process position;

[0040] FIG. 8 is an enlarged cross-sectional view of a frame and a cover ring in a vacuum processing chamber;

[0041] FIG. 9 is a cross-sectional view of a section of the inside the chamber with the cover ring mounted to a chamber wall;

[0042] FIG. 10 is a cross-sectional view of a section of the inside the chamber with the cover ring mounted to an internal heat sink;

[0043] FIG. 11 is a top down view of a semiconductor substrate mounted to tape and a frame supported by a transfer arm;

[0044] FIG. 12 is a cross-sectional view of a semiconductor substrate mounted to tape and a frame supported by a transfer arm;

[0045] FIG. 13 is a cross-sectional view of a wafer/frame in a transfer position;

[0046] FIG. 14 is a top view of a screen;

[0047] FIG. 15 is a top view of an electrostatic chuck according to the prior art;

[0048] FIG. 16 is a top view of a multi-zone electrostatic chuck according to the prior art;

[0049] FIG. 17 is a top view of an electrostatic chuck according to one embodiment of the present invention;

[0050] FIG. 18 is a cross-sectional view of a substrate on an electrostatic chuck according to the prior art;

[0051] FIG. 19 is a cross-sectional view of a work piece on an electrostatic chuck according to one embodiment of the present invention;

[0052] FIG. 20 is a cross-sectional view of an electrostatic chuck according to one embodiment of the present invention;

[0053] FIG. 21 is a cross-sectional view of an electrostatic chuck according to one embodiment of the present invention;

[0054] FIG. 22 is a top view of a work piece with multiple substrates according to one embodiment of the present invention;

[0055] FIGS. 23a-23c are cross sectional views of variations of mechanical partitions according to the present invention;

[0056] FIG. 24 is a cross sectional view of etched features according to one embodiment of the present invention; and

[0057] FIG. 25 is a flowchart of one embodiment of the present invention.

[0058] Similar reference characters refer to similar parts throughout the several views of the drawings.

DETAILED DESCRIPTION OF THE INVENTION

[0059] A typical semiconductor substrate after device fabrication is illustrated in FIG. 1. The substrate (100) has on its surface a number of areas containing device structures (110) separated by street areas (120) which allows for separation of the device structures into individual die. Although silicon is commonly used as a substrate material, other materials chosen for their particular characteristics are frequently employed. Such substrate materials include Gallium Arsenide and other III-V materials or non-semi-conductor substrates on which a semi-conducting layer has been deposited. Further substrate types may also include Silicon-On-Insulator (SOI) wafers and semiconductor wafers mounted on carriers. While the example above describes die separated by streets, aspects of the invention may be beneficially applied to other pattern configurations on a substrate including substrates containing Gallium, substrates containing Indium, substrates containing Aluminum, substrates containing epitaxial layers, substrates containing carbon, substrates that are polymeric, substrates containing a semiconductor and/or substrates containing multiple semiconductors.

[0060] In the present invention, as is shown in a cross sectional view in FIG. 2, the device structures (110) are then covered with a protective material (200) while the street areas (120) remain unprotected. This protective material (200) can be a photoresist, applied and patterned by well-known techniques. Some devices, as a final process step are coated with a protective dielectric layer such as silicon dioxide or PSG which is applied across the whole substrate. This can be selectively removed from the street areas (120) by patterning with photoresist and etching the dielectric material, as is well known in the industry. This leaves the device structures (110) protected by the dielectric material and the substrate (100) substantially unprotected in the street areas (120). Note that in some cases test features to check the wafer quality may be located in the street areas (120). Depending on the specific wafer fabrication process flow, these test features may or may not be protected during the wafer dicing process. Although the device pattern illustrated shows oblong die, this is not necessary, and the individual device structures (110) may be any other shape, such as hexagons, as best suits the optimum utilization of the substrate (100). It is important to note that while the previous example considers dielectric materials as the protective film, that the invention may be practiced with a wide range of protective films including semi-conductive and conductive protective films. Furthermore, the protective layer can consist of multiple materials. It is also important to note that some portion of the protective film may be an integral part of the final device structure (e.g., a passivation dielectric, metal bonding pad, etc.). Furthermore, the present invention can also be beneficially used with bulk wafers without the necessity of having devices or device structures. One such example may be a semiconductor substrate (Silicon, III-V compounds, etc.), mounted on a carrier or not mounted, covered by a masking material defining the structures to be etched. The substrate may also contain at least one additional layer with different material properties, such as for example an insulating layer.

[0061] The substrate (100) may be thinned, typically by a grinding process, which reduces the substrate thickness to a few hundred microns to as thin as approximately 30 microns or less. As is shown in FIG. 3, the thinned substrate (100) is then adhered to a tape (300) which in turn is mounted in a rigid frame (310) to form a work piece (320). The frame is typically metal or plastic, though other frame materials are possible. The tape (300) is typically made from a carbon-containing polymer material, and may additionally have a thin conductive layer applied to its surface. The tape (300) provides support for the thinned substrate (100) which is otherwise too fragile to handle without breakage. It should be noted that the sequence of patterning, thinning and then mounting is not critical and the steps may be adjusted to best fit the particular devices and substrate and the processing equipment used. It is important to note that while the previous example considers a work piece (320) that is comprised of mounting a substrate (100) on an adhesive tape (300) which in turn is attached to a frame (310), that the invention is not limited by the configuration of the wafer and carrier. The wafer carrier can be comprised a variety of materials. The carrier supports the substrate during the plasma dicing process. Furthermore, the wafer need not be attached to the carrier using an adhesive—any method that holds the wafer to the carrier and allows a means thermal communication of the substrate to the cathode is sufficient (e.g., an electrostatically clamped carrier, a carrier with a mechanical clamping mechanism, etc.).

[0062] After mounting the substrate (100) with the tape (300) in the dicing frame (310), the work piece (320) is transferred into a vacuum processing chamber. Ideally, the transfer module is also under vacuum which allows the process chamber to remain at vacuum during transfer, reducing processing time and preventing exposure of the process chamber to atmosphere and possible contamination. As shown in FIG. 6, the vacuum processing chamber (600) is equipped with a gas inlet (610), a high density plasma source (620) to generate a high density plasma, such as an Inductively Coupled Plasma (ICP), a work piece support (630) to support the work piece (320), an RF power source (640) to couple RF power to the work piece (320) through the work piece support (630) and a vacuum pump (650) for pumping gas from the processing chamber (600). During processing, the unprotected areas (120) of substrate (100) are etched away using a reactive plasma etch process (400) as shown in FIG. 4. This leaves the devices (110) separated into individual die (500) as shown in FIG. 5. In another embodiment of the invention, the unprotected areas (120) of the substrate (100) are partially etched away using a reactive plasma etch process (400). In this case, a downstream operation, such as a mechanical breaking operation, can be used to complete the die separation. These downstream methods are well known in the art.

[0063] While the previous example describes the invention using a vacuum chamber in conjunction with a high density plasma (e.g., ECRs, ICP, helicon, and magnetically enhanced plasma sources), it is also possible to etch the unprotected areas of the substrate using a wide range of plasma processes. For example, one skilled in the art can imagine variations of the invention using a low density plasma source in a vacuum chamber or even the use of plasmas at or near atmospheric pressures.

[0064] When the work piece (substrate/tape/frame assembly) (320) is in the position for plasma processing, the frame (310) can be protected from exposure to the plasma (400). Exposure to the plasma (400) may cause heating of the frame (310) which in turn may cause local heating of the mounting tape (300). At temperatures above approximately 100 degrees Celsius, the physical properties of the tape (300) and its adhesive capability may deteriorate and it will no longer adhere to the frame (310). Additionally, exposure of the frame (310) to the reactive plasma gas may cause degradation of the frame (310). Since the frame (310) is typically re-used after wafer dicing, this may limit the useful lifetime of a frame (310). Exposure of the frame (310) to the plasma (400) may also adversely affect the etch process: for example the frame material may react with the process gas, effectively reducing its concentration in the plasma which may reduce the etch rate of the substrate material, thus increasing process time. To protect the frame (310), a protective cover ring (660), as shown in FIGS. 6, 7 and 8, is positioned above the frame (310). In one embodiment, the cover ring (660) does not touch the frame (310) since contact with the frame (310) (which would occur during transfer into the process chamber (600)) may generate undesirable particles.

[0065] In FIG. 8, dimension (800) represents the distance between the cover ring (660) and the frame (310). This dimension can range from greater than approximately 0.1 mm to less than approximately 20 mm with an optimal value of 4 mm. If the distance (800) is too large, plasma will contact the frame (310) and the benefits of the cover ring (660) will be lost.

[0066] In one embodiment the cover ring (660) is temperature controlled. Without cooling, the cover ring (660) temperature may increase due to exposure to the plasma and in turn heat the tape (300) and the frame (310) via thermal radiation, causing degradation as noted above. For the case where the cover ring (660) is cooled, cooling of the cover ring (660) is accomplished by having it in direct contact with a cooled body, such as the wall of the process chamber (600) shown in FIG. 9 or a heat sink (1000) located within the process chamber (600) shown in FIG. 10. To ensure that heat is adequately removed from the cover ring (660) to the heat sink (1000), the cover ring (660) should be made of a material that has good thermal conductivity. Such materials include many metals, for example Aluminum, but other thermally conductive materials, such as Aluminum Nitride and other ceramics can be used. The choice of the cover ring material is chosen to be compatible with the plasma process gases used. While Aluminum is satisfactory for Fluorine based processes, an alternate material, such as Aluminum Nitride, or the addition of a protective coating, such as Aluminum Oxide may be necessary when Chlorine based processes are used. Operation temperature of the cover ring (660) during plasma processing ranges from about 25 degrees Celsius to about 350 degrees Celsius. Preferably the temperature of the cover ring (660) is held in the range of 50 degrees Celsius to 90 degrees Celsius which minimizes thermal radiation to the tape (300) and the frame (310) and ensures that the tape (300) maintains its mechanical integrity. Alternatively, the cover ring (660) may be temperature controlled by bringing the cover ring (660) into contact with a temperature controlled fluid. This fluid can be a liquid or gas. In the case where the cover ring (660) temperature is controlled by a fluid, the cover ring (660) may contain a number of fluid channels to facilitate heat transfer. These fluid channels can be internal to the cover ring (660), externally attached, or some combination of the two.

[0067] The work piece (substrate/tape/frame assembly) (320) is transferred both into and out of the process chamber (600) by a transfer arm (1100) that supports the frame (310) and substrate (100) so that they are maintained nearly coplanar as shown in FIGS. 11 and 12. The transfer arm (1100) may support both the tape (300) and the frame (310) or the frame (310) alone, but it is important that the assembly (320) not be supported beneath the substrate (100) area alone because of the fragile nature of thinned substrates (100). The transfer arm (1100) has an alignment fixture (1110) attached to it that aligns the frame (310) in a repeatable position before being transferred into the process chamber (600). The frame (310) can also be aligned by other techniques well-known in semiconductor processing (e.g., optical alignment). The alignment can also be performed on the substrate (100) by such well-known techniques. It is important that the work piece (substrate/tape/frame assembly) (320) be aligned before placement within the process chamber (600) to avoid miss-processing as explained below.

[0068] In FIG. 8, the substrate-to-frame dimension (810) represents the distance between the outer diameter of the substrate (100) and the inner diameter of the frame (310). This may be 20 mm to 30 mm (e.g., Disco Corporation dicing frame has an inner diameter of about 250 mm for 200 mm substrates, so that the substrate-to-frame dimension (810) is nominally 25 mm). During mounting of the wafer (100) on the tape (300) within the frame (310), the deviation of wafer (100) placement may be as much as 2 mm so that the cover ring to substrate distance (820), which is the distance between the substrate (100) outer diameter and the inner diameter of the cover ring (660) can also vary from assembly to assembly by up to 2 mm. If at some point the cover ring to substrate distance (820) is less than zero, the cover ring (660) will overlay the edge of the substrate (100). This area of the substrate will be shadowed and prevented from etching, which can prevent die separation and cause problems in subsequent processing steps. It is preferred that the cover ring (660) does not overlap the substrate (100). Alignment of the substrate/tape/frame assembly (320) prior to transfer is required to prevent such problems. Further, to additionally ensure that cover ring to substrate distance (820) is not less than zero, the cover ring inner diameter should be greater than the diameter of the substrate (100). It is preferred that the cover ring inner diameter be 5 mm greater than the substrate diameter (e.g., 205 mm cover ring inner diameter for 200 mm substrate). The cover ring overhang dimension (830) in FIG. 8 represents the distance from the inner diameter of the cover ring (660) to the inner diameter of the frame (310). Alignment of the frame (310) prior to transfer into the process chamber (600) ensures that the cover ring overhang dimension (830) remains essentially constant for the entire circumference around the substrate (100) and that any portion of tape (300) that is not contacted by the Electrostatic chuck (ESC) (670) is substantially shadowed from the plasma. In a preferred embodiment any tape (300) that is not in thermal contact with the ESC (670) is overlapped by the cover ring (660).

[0069] When the work piece (e.g., substrate/tape/frame assembly) (320) is transferred into the process chamber (600), it is placed onto the lifting mechanism (680) and removed from the transfer arm (1100). The reverse process occurs during transfer of the work piece (e.g., substrate/tape/frame assembly) (320) out of the process chamber (600). The lifting mechanism (680) touches the frame (310) area and provides no point contact to the substrate (100). Point contact to the substrate (100) can cause damage to the substrate (100), particularly after die separation and unloading of the work piece (320), since the flexibility of the tape (300) may cause the die to contact each other and damage to occur. FIG. 13 shows the lifting mechanism (680) lifting the frame (310) from the underside; however, the frame (310) can also be removed from the transfer arm (1100) by contact with the top surface, bottom surface, outer diameter of the frame (310) or any combination of these using a clamping device. In order to have enough clearance to place the work piece (320) on the work piece support (630) to process the substrate (100), the frame (310), the work piece support (630), and the cover ring (660) can move relative to each other. This can be accomplished by moving the cover ring (660), the work piece support (630), or the lifting mechanism (680) or any combination of the three.

[0070] During plasma processing, heat is transferred to all of the surfaces the plasma touches including the substrate (100), tape (300), and frame (310). The cover ring (660) will minimize the heat transfer to areas of the tape (300) and the frame (310), but the substrate (100) must be exposed to the plasma (400) for processing.

[0071] The perforations (695) in the mechanical partition (690) can be arranged in a number of ways. FIG. 14 shows a top view of a mechanical partition (690) with a pattern of perforations (695) that are uniformly distributed in a rectilinear pattern. While FIG. 14 shows a rectilinear pattern of perforations (695), alternate configurations including hexagonal, honeycomb or circular perforation patterns may be used. The dimensions of the perforations (2600) may vary across the mechanical partition (690) (e.g., FIGS. 23b and 23c).

[0072] In an alternate embodiment, the perforation pattern in the mechanical partition (690) may designed such that the spacing between perforations (2610) is variable (e.g., FIGS. 23b and 23c). In yet another embodiment, the size and/or shape of the perforations may vary across the mechanical partition (690). The mechanical partition (690) can have a perforation pattern such that both the perforation size (2600) and spacing (2610) vary across the partition.

[0073] FIG. 15 shows a top view of an electrostatic chuck as is known in the art. An ESC (670) will commonly have a sealing region or regions (1700) to confine the pressurized fluid between the ESC and the substrate (100) being clamped. The sealing regions (1700) are commonly employed near the perimeter of the ESC and around any features that would otherwise cause the pressurized fluid to leak and degrade the heat transfer. Some ESCs make use of multiple concentric seal bands (1700) as shown in FIG. 16 to generate discrete volumes or zones (1800, 1810) that allow independent control of the fluid pressure within the respective zone. These ESCs are commonly described as multi pressure zone ESCs. It is also possible that the pressure zones (1800, 1810) are not discrete and some of the pressurized fluid leaks between zones. Wide sealing regions (1700) are typically not preferred. Typically, the thermal gradients across the work piece area which overlaps said wide sealing region may negatively impact some characteristic of the etch. On the contrary, if a sealing region is not wide enough, the pressurized fluid may leak and heat transfer may degrade. As shown in FIG. 15, in the prior art the sealing regions or bands (1700) described above do not extend past the substrate (100) since doing so would expose the sealing surface of the seal band (1700) to potentially corrosive plasma gases that may decrease the lifetime of the ESC. FIG. 18 shows the cross sectional view of a rigid substrate (100) on an electrostatic chuck as is known in the art. Note that the seal band (1700) is overlapped by the substrate (100). Furthermore, it is typical in the art to have the substrate (100) extend beyond the edge of the sealing surface (1700) in order to accommodate for any placement error during placement of the wafer on the ESC (670). It is also important to note that in the prior art that the lift pin holes (1720) and lift pins (2025) used to lift the substrate off the ESC are also located under the substrate (100)—inside or within the outermost seal band (1700). Finally, ESCs known in the art have the clamping electrode(s) (2010) confined to the areas underneath the substrate (100). Therefore the clamping electrode (2010) is inside of the area defined by the outer seal band (1700)— both of which are inside the wafer perimeter.

[0074] FIG. 19 shows a cross sectional view for one embodiment of the current invention. When clamping a flexible work piece (e.g., a work piece (320) containing tape (300), etc.), it is preferable to have at least one clamping electrode (2010) overlap the sealing region (1700) as depicted in FIG. 19. This is particularly important when a flexible region of the work piece overlaps the sealing region (1700). Overlap of the clamping electrode (2010) with the flexible work piece (300) helps minimize Helium gas leakage. Preferably this overlap (2200) is greater than 1 mm wide. The overlap (2200) can be along inside seal band perimeter, outer seal band perimeter, within the seal band, or some combination of the three.

[0075] FIGS. 20 and 21 show the clamping electrode (2340) has no electrical insulator interposed between the clamping electrode (2340) and the material to be clamped (2320). In the case where the ESCs clamping electrode (2340) is exposed (not covered by an electrical insulator) and the clamping electrode (2340) is at least in partial contact with the material to be clamped (2320), the bottom surface of the material to be clamped (2320) that is in contact with the ESC electrode (2340) must be electrically insulating.

[0076] In the case where the work piece (320) contains more than one substrate (100) as shown in FIG. 22, it is preferred that the ESC (670) extends beyond the edge of at least one substrate (100)— preferably extending beyond the edges of all substrates (100). In order to confine the cooling gas (typically helium) behind the substrates, the tape (300) must form a sealing surface between the electrostatic chuck (670) and the tape (300). This sealing surface is often called a seal band (1700). In one embodiment, the sealing surface (1700) is continuous and forms a region that circumscribes all the substrates (100). In another embodiment, the sealing band (1700) may be discontinuous and circumscribes at least one substrate. In yet another embodiment, each substrate (100) is circumscribed by an individual seal band (1700). In a further embodiment, the substrates (100) may overlay the sealing band(s) or alternatively, the sealing band(s) may lie outside the substrate(s) (100).

[0077] As shown in FIG. 24, when etching a substrate down to an interface, defined by the contact of two materials (e.g., 2720 and 2730 in FIG. 24) of different relative dielectric constants (e.g., silicon on insulator, SOI structures), problems with the etch associated with charging at the interface, are well known. Such problems can be electrical or physical and are commonly known as notching (e.g., see 2700 in FIG. 23), trenching, feature profile degradation. Interface examples where these problems typically occur are Silicon-on-Insulator (SOI), semiconductor substrate mounted on insulating carriers, semiconductor wafers (e.g., GaAs, Si) mounted on tape, and substrates containing at least one electrically insulating layer. These problems are undesirable for device yield and performance. For example, when etching silicon using a time division multiplexed (e.g., TDM, DRIE or Bosch) process stopping on an insulator (e.g., SiO.sub.2) it is known in the art that undercut (or notching) will occur at the silicon/insulator interface.

[0078] In any embodiment according to the present invention for a method for plasma dicing a substrate, the substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The at least one of the plurality of streets of the substrate can intersect at an edge of the substrate. At least one street can be disposed between at least two devices. At least one street can surround the perimeter of at least one die. At least one street can surround the perimeter of most die. The streets can be positioned between a process control monitor and the device. There can be multiple devices on the substrate. The device can be on the front side of substrate or both sides of the substrate.

[0079] In any embodiment according to the present invention for a method for plasma dicing a substrate, the at least one device structure on the substrate can be protected during the processing step. The protection can be provided by a photoresist mask, a hardmask, a trilayer mask, a laser grooved (ablated) mask, a mechanically defined mask, a saw defined mask, a scribe defined mask, and/or a water soluble mask (Hogomax). The protection layer can be a part of the device structure such as device passivation layers, bonding pads, interlayer dielectrics and/or a back-metal layer. The protection can be achieved by a device structure and an applied mask layer(s). In addition, this protective layer can be a film that can generate a byproduct when exposed to a plasma that aids in the processing of the substrate. This film can also be any type of polymer containing film.

[0080] In any embodiment according to the present invention for a method for plasma dicing a substrate, the substrate is placed onto a support film on a frame to form a work piece. The substrate or multiple substrates can be adhered to the support film. The substrates can be of the same material or the substrates can be of a different material. The substrates can be the same size or a different size. The substrates can be the same thickness or a different thickness. The substrate can be adhered on the side opposite the devices or the substrate can be adhered to the device side facing the tape.

[0081] In any embodiment according to the present invention for a method for plasma dicing a substrate, the support film can further comprise a carbon containing layer, can be polymeric, can be elastic, can be dicing tape or grinding tape. The support film can further comprise a plurality of layers. The support film can further comprise an adhesive layer. The adhesive layer can further comprise an acrylic based adhesive, a rubber-based adhesive, a UV release adhesive, and/or a thermal release adhesive. The adhesive layer can be between approximately 5-200 microns thick. The support film may contain a base layer. The base layer can further comprise polyolefin, PVC (polyvinyl chloride), EVA (Ethylene vinyl acetate), Polyethylene, Polyester-PET (Polyethylene terephthalate) and/or polyimide. The support film may contain a release layer and/or an anti-static layer. The support film's composition can change as a function of the support film's thickness. The support film can contain a region with a graded composition (composition changes as a function of film thickness in a non-discrete manner). The support film can be designed to withstand temperatures of approximately 60 degrees Celsius or temperatures up to approximately 300 degrees Celsius.

[0082] In any embodiment according to the present invention for a method for plasma dicing a substrate, the frame of the work piece can have a conductive layer and/or a metal layer. The frame can be adhered to the support film. The support film can overlap the frame, the support film can completely overlap the frame and/or the support film may not extend past the outer diameter of the frame. The frame can be rigid. The frame can be made of metal, hardened magnetic stainless, electro-polished and/or a resin (e.g., Acrylonitrile butadiene styrene). The frame can be approximately 1-5 mm thick. The substrate can be positioned so that there is no overlap of the substrate and the frame. The inner diameter of the frame can be greater than the outer diameter of the substrate. The substrate can be indexed to the frame translationally and/or rotationally. The outer diameter of the frame can contain index features and/or the inner diameter of the frame can contain index features. The substrate and the frame can be concentric.

[0083] In any embodiment according to the present invention for a method for plasma dicing a substrate, a process chamber having a plasma source is provided. The plasma source can be a high density plasma source. A work piece support is provided within the plasma process chamber. An electrostatic chuck can be incorporated into the work piece support. The work piece is placed onto the work piece support. An RF power source can be coupled to the work piece support to create a plasma around the work piece. A thermal communication between the work piece and the work piece support can be provided by supplying a pressurized gas such as helium from the work piece support to the work piece.

[0084] In any embodiment according to the present invention for a method for plasma dicing a substrate, a plasma is generated from the plasma source in the plasma process chamber. The entire work piece can be exposed to the generated plasma and/or the entire substrate can be exposed to the generated plasma. The exposure of the support film to the generated plasma can modify the support film composition. The exposure of the support film to the generated plasma can deposit material onto the support film. The exposure of the support film to the generated plasma can chemically modify the support film. The exposure of the support film to the generated plasma can thin the support film. The exposure of the support film to the generated plasma can etch the support film.

[0085] In any embodiment according to the present invention for a method for plasma dicing a substrate, at least a portion of the support film that is overlapped by the substrate is not exposed to the generated plasma. A portion of the support film outside the perimeter of the substrate can be exposed to the generated plasma. The support film outside the perimeter of the substrate can be exposed to the generated plasma. A portion of the support film adjacent to the perimeter of the substrate can be exposed to the generated plasma. The support film adjacent to the perimeter of the substrate can be exposed to the generated plasma. A portion of the support film overlapped by the workpiece support can be exposed to the plasma. The support film overlapped by the workpiece support can be exposed to the plasma. A portion of the support film surface not in contact with the work piece support can be exposed to the plasma. The support film that can be overlapped by the frame can be exposed to the generated plasma. The support film that can be overlapped by the frame may not be exposed to the generated plasma. A portion of the support film inside the inner diameter of the frame can be exposed to the generated plasma. The support film inside the inner diameter of the frame can be exposed to the generated plasma. A portion of the support film that is adjacent to the inner diameter of the frame can be exposed to the generated plasma. The support film that is adjacent to the inner diameter of the frame can be exposed to the generated plasma. The support film can remain intact during the exposure to the generated plasma. The support film can be suitable for an expansion operation post exposure to the generated plasma. The support film can be etched prior to the substrate being exposed to the generated plasma. The support film can be selectively etched faster than the substrate in a portion of the process. (e.g., the support film etch rate is greater than the substrate etch rate for at least a portion of the process). A layer of the support film can be thinned prior to the substrate being exposed to the generated plasma.

[0086] In any embodiment according to the present invention for a method for plasma dicing a substrate, the possible change in the support film composition can be detected during the exposure of the support film to the generated plasma. The support film surface composition can be monitored using radiation (e.g., light). The radiation can emitted from an external light source (e.g., laser or broad band light source). The radiation can be emitted from the plasma. The support film composition can be detected by optical emission spectrometry (OES), laser emission spectrometry (LES), optical emission interferometry (OEI). The process time required to change the support film composition can be predetermined. The possible change in the support film composition can change the substrate etch rate. The possible change in the support film composition can change the support film etch rate. The possible change in the support film composition can change the etch mask etch rate. The possible change in the support film composition can affect die sidewall profile. The possible change in the support film composition can increase etch anisotropy. The possible change in the support film composition can maintain vertical die sidewalls.

[0087] In one embodiment according to the present invention, the work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.

[0088] In any embodiment according to the present invention for a method for plasma dicing a substrate, a plasma is generated from the plasma source in the plasma process chamber. The entire work piece can be exposed to the generated plasma and/or the entire substrate can be exposed to the generated plasma. The exposure of the support film to the generated plasma can modify the die attach film composition. The exposure of the die attach film to the generated plasma can deposit material onto the substrate. The exposure of the die attach film to the generated plasma can chemically modify the die attach film. The exposure of the die attach film to the generated plasma can thin the die attach film. The exposure of the die attach film to the generated plasma can etch the die attach film.

[0089] In another embodiment according to the present invention, a surface of the substrate of the work piece is etched using the generated plasma to removed material from the surface of the substrate and provide exposed surfaces. The etching step can have some degree of anistropy. The etching step can be anisotropic. A passivation layer comprising a byproduct generated from the support film that is exposed to the generated plasma is deposited onto the surfaces that were exposed in the etching step. A passivation layer comprising a byproduct generated from the die attach film that is exposed to the generated plasma is deposited onto the surfaces that were exposed in the etching step. A reaction byproduct from the support film and/or the die attach film can be deposited on the substrate. A byproduct from the support film and/or the die attach film can contribute to the anisotropy of an etched feature in the substrate. A byproduct from the support film and/or the die attach film can be deposited on a feature sidewall etched into the substrate. The anisotropy of the etched feature in the substrate can be adjusted by adjusting the support film and/or the die attach film etch rate. The etch rate of the support film and/or the die attach film can be changed during the course of the process in order to modify and/or maintain a desired etch feature profile in the substrate. The etch rate of the support film and/or the die attach film can be adjusted by adjusting plasma process parameters. The etch rate of the support film and/or the die attach film may be adjusted nearly independently of the substrate etch rate. In a case where the substrate contains a compound semiconductor (e.g., Group III-V semiconductors including GaAs, InP, AlGaAs, etc.) the support film and/or the die attach film etch rate can be adjusted by adjusting the RF bias applied to the work piece. For example, when etching GaAs in a chlorine-containing process, increasing the RF bias on the work piece significantly increases the support film and/or the die attach film etch rate with only a modest effect on the GaAs etch rate. The etch rate of GaAs for plasma dicing can be from tenths of microns per minute to over 50 microns per minute. The support film and/or the die attach film etch rates typically range from 0.01 micron per minute to tens of microns per minute. The selectivity of GaAs:support film and/or the die attach film (ratio of etch rate of GaAs to etch rate of support film and/or the die attach film) can range from near 1:1 up to approximately 100:1. Typical etch rate selectivities of GaAs to support film can be near 10:1. Decreasing the GaAs:support film and/or the die attach film etch selectivity typically provides more sidewall passivation to features etched into a GaAs substrate. In other words, lowering the GaAs:support film and/or the die attach film selectivity can increase the anisotropy of the GaAs etch. In another embodiment, a change in the composition of the support film and/or the die attach film may effect the etch performance on the substrate. A change in support film and/or the die attach film composition may effect the etch rate of the substrate material. A change in support film and/or the die attach film composition may affect the degree of anisotropy of features etched into the substrate. In a case where the support film and/or the die attach film consists of more than one layer, it can be beneficial to modify the etch process in response to a change in the support film and/or the die attach film composition. For example, when plasma dicing a GaAs-containing substrate on a support film and/or the die attach film it can be beneficial to modify the plasma process conditions based on the support film and/or the die attach film composition. GaAs can be etched using chlorine containing processes. Processes can contain Cl.sub.2 as a chlorine source and may contain additives to help with etch anisotropy or surface topology (e.g., surface roughness). Typical additives include hydrogen-containing gases (e.g., H.sub.2, HCl, HBr, HI, CH.sub.4, etc.), nitrogen-containing gases (e.g., N.sub.2 and NH.sub.4, etc.), boron containing gases (e.g., BCl.sub.3, BF.sub.3, BBr.sub.3, etc.), silicon containing gases (e.g., SiCl.sub.4, etc.), carbon containing gases (e.g., CCl.sub.4, CHCl.sub.3, C.sub.xH.sub.yCl.sub.z, etc.), or inert gases (Ar, He, Kr, Xe, etc.), and oxygen-containing gases (e.g., O.sub.2, N.sub.2O, CO, CO.sub.2, H.sub.2O, NO.sub.2, SO.sub.2, etc.). The inventors have observed that while etching a GaAs containing substrate on a support film (e.g., dicing tape that contains an acrylic containing adhesive layer over a film base layer) using a chorine-containing plasma etch process (e.g., BCl.sub.3/Cl.sub.2 based process) that the GaAs etch rate decreases dramatically once a portion of the adhesive layer of the support film has been consumed by the plasma. The etch rate of the GaAs substrate decreases as a portion of the base layer of the film is exposed to the plasma. The base layer of the film can contain polyethylene terephthalate (PET). The depletion of the adhesive layer during a plasma process can be detected using optical emission spectrometry. As the adhesive layer of the dicing tape is depleted, a decrease in the GaAs etch rate can be mitigated by increasing the concentration (e.g., flow rate) of an oxygen-containing process gas. Increasing the concentration of an oxygen-containing process gas can increase the GaAs etch rate. In a preferred embodiment, the oxygen-containing gas is injected into the plasma chamber using a gas injector that is separate from the gas introduction used for another process gas. In a preferred embodiment, the oxygen containing gas is introduced into the plasma chamber independently from a boron-containing process gas (e.g., BCl.sub.3). In another preferred embodiment, the oxygen containing gas is introduced into the plasma chamber independently from the a silicon-containing process gas (e.g., SiCl.sub.4).

[0090] For example, a plasma process is initiated on a workpiece (e.g., at least one substrate mounted on a support film with a frame), the condition of the support film is monitored during the plasma process (e.g., by monitoring the emission intensity of the plasma at least one wavelength. In a preferred embodiment, the wavelength can be associated with an oxygen-containing molecule), detecting a change in the condition of the support film during the plasma process (e.g., depletion of an adhesive layer in the film exposing a base layer), modifying at least one plasma parameter in response to the detected change in the support film condition (e.g., changing the composition of the process feed gas. In a preferred embodiment increasing the concentration of at least one oxygen-containing process gas) and continuing the plasma process.

[0091] In another embodiment according to the present invention a surface of the substrate of the work piece is etched using a plasma etch gas and a byproduct generated from the support film that is exposed to the generated plasma to removed material from the surface of the substrate and provide exposed substrate surfaces.

[0092] Plasma dicing can efficiently singulate a wide range of devices. Some die structures however contain at least one composite layer that can be difficult to plasma etch without harming (e.g., damaging) the device. An example of such a structure would be a silicon device to be singulated that contains a die attach film (DAF). Die attach films are adhesive layers that can be used to bond chips to one another (e.g., stacked die). The die can be singulated prior to the bonding operation. During integrated circuit device fabrication, DAF can be used to create multi-chip stacked packages.

[0093] In order to get the required mechanical and electrical film properties, die attach films (DAF) are often designed using composite materials. For example, a die attach film can consist of a polymeric matrix (e.g., epoxy resins, etc.) with embedded filler materials (e.g., SiO.sub.2 particles, etc.). Both materials in this example (epoxy and SiO.sub.2) are capable of being plasma etched. For example, the polymer matrix can be etched in an oxygen-containing plasma. A silicon dioxide (SiO.sub.2) component can also be plasma etched, though due to the strength of the silicon oxygen bond, significant ion energy or higher wafer temperatures are often required to get commercially viable SiO.sub.2 plasma etch rate. While these higher ion energy and/or higher temperature conditions will etch an SiO.sub.2 component in a DAF film, these conditions may also etch exposed materials of the device structure, potentially damaging the device (e.g., degrading device performance and/or yield). Therefore there is a need to be able to remove composite materials during a dicing process flow that does not significantly damage the singulated devices.

[0094] In all embodiments, the composite layer can be composed of more than one component. The components of the composite film can differ from one another by chemical property (e.g., composition) or physical property (e.g., material phase, material structure, etc.) or both. The composite layer can be less than 100 microns thick. The composite layer can be less than 50 microns thick. The composite layer can be less than 25 microns thick

[0095] In all embodiments, a composite material can contain carbon (e.g., polymeric materials, graphite, SiC, etc.). A composite material can contain silicon (e.g., Si, SiO.sub.2, SiC, SiN, etc.). A composite material can contain a metal.

[0096] In all embodiments, a die attach layer can be in contact with the substrate. A die attach layer can be in contact with the support film. A die attach material can be in contact with both the substrate and the support film. A die attach film can be adhesively attached to the substrate. The die attach layer can be adhesively attached to both the substrate and the support film. The die attach layer can be adhesively attached to the substrate and/or support film by pressing an adhesive layer against the die attach film and against the substrate and/or support film. Also, the die attach film can be adhesively attached to the substrate and/or support film through thermal bonding.

[0097] A composite layer can be a die attach film (DAF). The composite film can be a DAF that contains a filler material. The DAF filler material can contain Si. The DAF filler material can be SiO.sub.2.

[0098] The composite layer can contain a material that exhibits an ion-assisted plasma etch mechanism in a plasma.

[0099] A composite material can contain a matrix component. The matrix component can contain a metal. The matrix component can contain carbon (e.g., polymer, etc.). The matrix component can be a polymeric matrix. The polymer matrix can be a thermoset. The polymer matrix can be a thermoplastic. The polymeric matrix can contain any of the following resins: epoxy, polyimide, polyamide, polyester, etc. The matrix can contain more than one component (e.g., resin, copolymers, blended polymers, etc.). The matrix component can be carbon. The matrix component can encapsulate a filler component.

[0100] The composite material can contain a composite reinforcement (e.g., filler, etc.). The reinforcement material can comprise greater than 5% of the composite material. The reinforcement material can comprise greater than 25% of the composite material. The reinforcement material can comprise greater than 50% of the composite material. The reinforcement material can comprise greater than 75% of the composite material. The reinforcement material can comprise greater than 90% of the composite material. The reinforcement material can be in discrete domains within the composite material (e.g., filler particles). The composite reinforcement can contain a wide range of materials including carbon-containing materials, silicon-containing materials, metal-containing materials, ceramic, etc. The composite reinforcement can contain silicon dioxide (SiO.sub.2). The composite reinforcement can have isotropic or anisotropic composition. The composite material can be a fiber reinforced composite. A fiber reinforced composite can contain long fibers, short fibers, or a combination of both. The composite material can be a flake reinforced composite. The composite material can be a particle reinforced composite. The particle reinforced composite can contain spherically shaped particles. The particles can be solid, hollow, or a combination of both. The composite material can be a laminar reinforced composite.

[0101] The substrate etch process can be a vacuum process. The substrate etch process can be a plasma etch process. The plasma etch process can be a cyclical process (e.g., Bosch process, deep reactive ion etch (DRIE) process, time division multiplex (TDM) process, etc.). The substrate etch process can be at least partially anisotropic. The substrate etch process can be completely anisotropic.

[0102] The substrate etch process can expose at least a portion of a composite film overlapped by a street region. The substrate etch process can expose all of the composite layer overlapped by a street region.

[0103] The substrate etch process can be designed to remove a portion of substrate material overlapped by the protective material (e.g., the substrate etch feature profile can be re-entrant. In other words, the width of the substrate etch feature (e.g., dicing street in the substrate) created by the substrate etch can be narrower at the substrate surface that contains the device compared the feature width at the opposing face of the substrate). The width of the substrate etch feature (e.g., dicing street width) can be different from the street dimension of the protective material.

[0104] The substrate etch process can remove the substrate material faster than the composite material (e.g., the substrate etch process can have a substrate:composite etch selectivity (rate of substrate removal/rate of composite film removal) greater than one). The substrate etch process can have a substrate:composite etch selectivity greater than 10. The substrate etch process can have a substrate:composite etch selectivity greater than 100. The composite material can act as an etch stop for the substrate etch process.

[0105] The substrate etch process can etch the composite material. The substrate can remove a portion of the composite material. The substrate removal process by itself does not expose the support film in a street region where the composite film overlaps the street region. The substrate etch process alone does not etch through the composite film.

[0106] The composite film process can be an etch process. The composite film process can be a plasma etch process. The plasma etch process can chemically etch a first component of the composite film. The first component can be a matrix component. The plasma etch process can contain oxygen (e.g., O.sub.2, CO, CO.sub.2, etc.). The plasma etch process can contain hydrogen (e.g., H.sub.2, H.sub.2S, H.sub.2O, etc.). The plasma etch process can contain nitrogen (e.g., N.sub.2, NH.sub.3, N.sub.2O, etc.). The process gas can contain at least one inert gas (e.g., Ar, He, etc.). The process gas mixture can contain air. The plasma etch process can have a process pressure greater than 50 Torr. The plasma can be generated near atmospheric pressure. The plasma can be generated at a pressure greater than atmospheric pressure. The plasma can be an atmospheric plasma. The plasma can be a nonequilibrium plasma (e.g., low temperature plasma, local thermal equilibrium plasma, etc.). The plasma can be generated by an atmospheric plasma jet source, corona discharge source, dielectric barrier discharge (DBD) source, micro hollow cathode discharge source, or other plasma sources as is known in the art.

[0107] In the case where the composite film process contains a plasma, it can be necessary to cool the work piece to maintain a support film temperature below a support film damage threshold. The work piece can be cooled by being placed in contact with a cooled work piece support (e.g., cooled by thermal conduction) during the composite film etch process. The work piece can be clamped (e.g., electrostatically clamped, mechanically clamped, etc.) to the work piece support. The work piece can be cooled by convection (e.g., natural convection, forced convection, etc.).

[0108] The composite film process can apply a force to the composite film. The force can assist in the removal of a second component of the composite film. The second component of the composite film can be a reinforcement component. The reinforcement component can be a filler. The force can be a fluid force. The force can be an aerodynamic force. The force can be applied to the composite film by a fluid jet. The force can be applied to the composite film by more than one fluid jet. The force can be applied at normal incidence to the composite film. The force can be applied off-normal incidence to the composite film. The force can be applied over a range of incidence angles to the composite film. The fluid can consist of one or more fluids. At least one fluid can be a gas. At least one fluid can contain a plasma. The fluid can contain solids. Some portion of the fluid can pass through a plasma source. Some portion of the fluid may bypass a plasma source (e.g., a portion of the fluid does not pass through a plasma source). The fluid force does not dislodge die from the support film. The fluid force does not dislodge die from the composite film. The fluid force does not damage the device. It is preferred that the fluid force does not damage the support film such that it is not compatible with downstream processing (e.g., the composite etch process does not tear the support film, stretch the film such that die come into contact with or damage one another, etc.)

[0109] The area on the substrate contacted by the fluid can be less than the total area of the substrate. In order to remove the composite layer in all street regions within the substrate it can be necessary to move the fluid jet relative to the substrate. The work piece can be moved relative to the work piece. The work piece can be moved relative to the fluid jet. Both the work piece and the fluid jet can be move relative to one another.

[0110] In the case of multiple fluid jets, at least two fluid jets can have a different fluid composition. The fluid jet composition can differ by composition (e.g., process gas mixture, etc.) or different physical property (e.g., temperature, phase, etc.) At least two fluid jets can apply different forces to the work piece. At least two fluid jets can have a different incidence angle on the work piece. At least two fluid jets can contact the same area of composite film (e.g., at least a portion of the fluid jets overlap on the work piece). At least two fluid jets can contact different areas of the composite film (e.g., at least a portion of the fluid jets do not overlap on the work piece). At least two fluid jets can apply force to the film at the same time (e.g., at least two fluid jets are both applied to the work piece at the same time). At least two fluid jets can apply force to the film at different times (e.g., at least two fluid jets are not applied to the work piece at the same time). In one embodiment, at least one fluid jet contains a plasma and another fluid jet does not contain a plasma. At least one fluid jet can be used to reduce the substrate temperature.

[0111] The composite film process can etch a first component of the composite film faster than a second component of the composite film (e.g., the first component:second component etch selectivity is greater than 1:1). The first component:second component etch selectivity can be greater than 10:1. The first component:second component etch selectivity can be greater than 100:1. The first component:second component etch selectivity can be greater than 1000:1. The first component can be a matrix component. The matrix component can be a polymer (e.g., epoxy, polyimide, etc.) The second component can be a filler component. The second component can contain silicon. The second component can contain silicon dioxide.

[0112] The composite film etch process can be at least partially isotropic. The process can be isotropic. The composite film etch process can be anisotropic.

[0113] The composite film process can be selective to the substrate material. The etch rate of at least one component of the composite film can be greater than the substrate material etch rate (e.g., composite film:substrate etch selectivity is greater than 1:1). The composite film:substrate etch selectivity can be greater than 10:1. The composite film:substrate etch selectivity can be greater than 100:1. The composite film:substrate etch selectivity can be greater than 1000:1. In one embodiment, the composite film process does not etch the substrate.

[0114] The composite film process can be selective to the exposed device material(s). The etch rate of at least one component of the composite film can be greater than the at least one exposed device material (e.g., composite film:device etch selectivity is greater than 1:1). The composite film:device etch selectivity can be greater than 10:1. The composite film: device etch selectivity can be greater than 100:1. The composite film: device etch selectivity can be greater than 1000:1. The etch rate of at least one component of the composite film can be greater than exposed device materials. In one embodiment, the composite film process does not etch the device (e.g., the composite film process does not etch any of the exposed device materials). It is preferred that the composite film process does not damage the device (e.g., electrical damage, structural damage, etc.). It is preferred that the composite film process does not degrade the yield of the devices.

[0115] The composite film process may etch exposed regions of the support film. It is preferred that the composite film process does not etch through the support film. It is preferred that the composite film process allows the support film to be compatible with downstream processes (e.g., no tears in the support film, the support film is compatible with a downstream die attach process; the support film maintains adequate tension to support the singulated die without damaging the die; the support film remains attached to the workpiece frame; etc.). The composite film can be exposed in the street regions. The composite film consists of a matrix material and a reinforcement material.

[0116] By way of example, the invention can be applied to a work piece that contains a die attach film (DAF). The DAF film, contains approximately 50% of an SiO.sub.2 filler in an epoxy-containing polymer matrix. The SiO.sub.2 particles are approximately 1 micron in diameter. A plasma etch process using a deep reactive ion etch (DRIE) etch process was used to remove the substrate material (not shown) from the street regions. The plasma etch process was implemented on a commercially available MDS-100 plasma etch system by Plasma-Therm, LLC and used three steps per loop as shown in the table below:

TABLE-US-00001 Deposition Etch A Etch B Time <sec>  1-10 1-5  1-20 Pressure <mtorr>  10-150  10-150   50-2000 SF.sub.6 Flow <sccm>   0-100   0-300  200-2000 C.sub.4F.sub.8 Flow <sccm>  50-200   0-100   0-100 O.sub.2 Flow <sccm>   0-100   0-100   0-500 Ar Flow <sccm>   0-200   0-200   0-200 RF Bias Power <W>   0-100    0-1000   0-200 ICP Power <W>  500-5000  500-5000   1000-10000+

[0117] Following the substrate etch, a near atmospheric etch process was applied to the work piece.

TABLE-US-00002 Value Pressure <Torr>   50-5000 C.sub.xF.sub.y Flow <slm>  0-10 O.sub.2 Flow <slm>  0.1-100  Ar Flow <slm>  0.1-200  Power <W>   10-2000 Fluid outlet to substrate distance <mm> 0.1-40 

[0118] For the example above, after the plasma etch removes the silicon substrate material in the street regions, an oxygen atmospheric plasma was applied to the die attach film. The oxygen plasma chemically removes the epoxy matrix that contains the SiO.sub.2 particles. The oxygen plasma does not etch the SiO.sub.2 particles well. As the expoxy matrix is removed from the SiO.sub.2 particles, the force applied by the plasma/gas flow physically dislodges (removes) the SiO.sub.2 particles—exposing new epoxy material that can be subsequently etched. In this manner, an oxygen plasma at near to atmospheric pressure is capable of removing both the expoxy matrix material and SiO.sub.2 filler particles. The oxygen-based atmospheric plasma does not etch the silicon substrate. Furthermore, the oxygen-based atmospheric plasma does not etch the exposed device surfaces (e.g., metal pads, inorganic passivation films such as SiO.sub.2 and SiN, etc.).

[0119] A fluorine containing process gas (e.g., C.sub.xF.sub.y, SF.sub.6, NF.sub.3, etc.) can be added to the gas mixture of the composite film etch process. Fluorinated gases can comprise less than 50% by volumetric flow of the gas mixture. Fluorinated gases can comprise less than 20% by volumetric flow of the gas mixture. Fluorinated gases can comprise less than 10% by volumetric flow of the gas mixture. Fluorinated gases can comprise less than 5% by volumetric flow of the gas mixture. The addition of fluorine to the process gas mixture can raise the potential for damage to device layers (e.g., SiO.sub.2 and SiN passivation layers). Lower fluorine concentrations (e.g., less than 10% fluorine containing gas by volumetric flow) are desirable when exposed device layers are susceptible to etch damage. The addition of a fluorine-containing gas can increase the removal rate of polymeric materials. Fluorine-containing gases can also be used to affect other components in the composite film. For example in the case of a die attach film composed of an expoxy resin and SiO.sub.2 particle fillers, the addition of fluorine increases the epoxy etch rate and can prevent the agglomeration of SiO.sub.2 particles by slowly etching the exposed SiO.sub.2 particle surfaces. The presence of fluorine improves the ability of the aerodynamic forces from the fluid jet (e.g., plasma jet and/or secondary fluid jet) to physically remove SiO.sub.2 particles). When adding fluorine to the process gas mixture, the potential degradation of exposed device materials should be taken into consideration (e.g., fluorine-based plasmas may also etch or modify sensitive device layers including but not limited to SiO.sub.2 and SiN).

[0120] The present disclosure includes that contained in the appended claims, as well as that of the foregoing description. Although this invention has been described in its preferred form with a certain degree of particularity, it is understood that the present disclosure of the preferred form has been made only by way of example and that numerous changes in the details of construction and the combination and arrangement of parts may be resorted to without departing from the spirit and scope of the invention.