3D NAND flash and operation method thereof

Abstract

A programming method of an increment step pulse program (ISPP) for a three-dimension (3D) NAND flash includes programming a select wordline of an unselect bit line of the 3D NAND flash; performing a first verification process with at least a verification voltage on the select wordline; determining whether a first verification voltage of the first verification process for the select wordline is higher than a default voltage or not; and removing a pre-pulse phase of the ISPP when the first verification voltage is higher than the default voltage; wherein the first verification voltage is a following verification voltage of the first verification process.

Claims

1. A programming method of an increment step pulse program (ISPP) for a three-dimension (3D) NAND flash, comprising: programming a select wordline of a unselect bit line of the 3D NAND flash; performing a first verification process with at least a verification voltage on the select wordline; determining whether a first verification voltage of the first verification process for the select wordline is higher than a default voltage or not; and removing a pre-pulse phase of the ISPP when the first verification voltage is higher than the default voltage; wherein the first verification voltage is a following verification voltage of the first verification process.

2. The programming method of claim 1, further comprising: programming the select wordline of the 3D NAND flash when the first verification voltage is lower than or equal to the default voltage.

3. The programming method of claim 1, further comprising: determining whether the first verification voltage meets a target threshold voltage or not.

4. The programming method of claim 3, further comprising: programming the select wordline of the 3D NAND flash when the first verification voltage does not meet a target threshold voltage; and performing a second verification process on the select wordline of the 3D NAND flash.

5. The programming method of claim 4, further comprising: inhibiting the select wordline of the 3D NAND flash when a second verification voltage of the second verification process meets the target threshold voltage; wherein the second verification voltage is a following verification voltage of the second verification process.

6. The programming method of claim 3, further comprising: inhibiting the select wordline of the 3D NAND flash when the first verification voltage meets the target threshold voltage.

7. A three-dimension (3D) NAND flash, having a plurality of bit lines, wherein the plurality of bit lines comprises a plurality of wordline (WL) layers, the 3D NAND flash comprising: a select bit line; at least an unselect bit line; and a controller, configured to program a select wordline of the unselect bit line of the 3D NAND, perform a first verification process with at least a verification voltage on the select wordline, determine whether a first verification voltage of the first verification process for the select wordline is higher than a default voltage or not, and remove a pre-pulse phase of the ISPP when the first verification voltage is higher than the default voltage; wherein the first verification voltage is a following verification voltage of the first verification process.

8. The 3D NAND flash of claim 7, wherein the controller is configured to program the select wordline of the 3D NAND flash when the first verification voltage is lower than or equal to the default voltage.

9. The 3D NAND flash of claim 7, wherein the controller is configured to determine whether the first verification voltage meets a target threshold voltage or not.

10. The 3D NAND flash of claim 9, wherein the controller is configured to program the select wordline of the 3D NAND flash when the first verification voltage does not meet a target threshold voltage, and perform a second verification process with on the select wordline of the 3D NAND flash.

11. The 3D NAND flash of claim 10, wherein the controller is configured to inhibit the select wordline of the 3D NAND flash when a second verification voltage of the second verification process meets the target threshold voltage, wherein the second verification voltage is a following verification voltage of the second verification process.

12. The 3D NAND flash of claim 9, wherein the controller is configured to inhibit the select wordline of the 3D NAND flash when the first verification voltage meets the target threshold voltage.

13. An electronic device, having a three-dimension (3D) NAND flash, the 3D NAND flash comprises a plurality of bit lines having a plurality of wordline (WL) layers, and the 3D NAND flash comprising: a select bit line; at least an unselect bit line; and a controller, configured to program a select wordline of the unselect bit line of the 3D NAND, perform a first verification process with at least a verification voltage on the select wordline, determine whether a first verification voltage of the first verification process for the select wordline is higher than a default voltage or not, and remove a pre-pulse phase of the ISPP when the first verification voltage is higher than the default voltage; wherein the first verification voltage is a following verification voltage of the first verification process.

14. The electronic device of claim 13, wherein the controller is configured to program the select wordline of the 3D NAND flash when the first verification voltage is lower than or equal to the default voltage.

15. The electronic device of claim 13, wherein the controller is configured to determine whether the first verification voltage meets a target threshold voltage or not.

16. The electronic device of claim 15, wherein the controller is configured to program the select wordline of the 3D NAND flash when the first verification voltage does not meet a target threshold voltage, and perform a second verification process with on the select wordline of the 3D NAND flash.

17. The electronic device of claim 16, wherein the controller is configured to inhibit the select wordline of the 3D NAND flash when a second verification voltage of the second verification process meets the target threshold voltage, wherein the second verification voltage is a following verification voltage of the second verification process.

18. The electronic device of claim 15, wherein the controller is configured to inhibit the select wordline of the 3D NAND flash when the first verification voltage meets the target threshold voltage.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram of a programming process for a 3D NAND flash according to an embodiment of the present invention.

(2) FIG. 2 is a schematic diagram of an unselect bit line of the 3D NAND flash applying the programming process according to an embodiment of the present invention.

(3) FIG. 3 is a schematic diagram of distributions of channel potential of an unselect bit line of the 3D NAND flash according to an embodiment of the present invention.

(4) FIG. 4 is a waveform diagram of the select bit string of the 3D NAND flash applying the programming process according to an embodiment of the present invention.

DETAILED DESCRIPTION

(5) A pre-pulse phase is included in an increment step pulse program (ISPP) for a three-dimension (3D) NAND flash. The pre-pulse phase of the ISPP turns on an unselect upper select gate to decrease a difference of channel potential, which increases a write time of the 3D NAND flash.

(6) In order to reduce the write time of 3D NAND flash, FIG. 1 is a schematic diagram of a programming process 10 for a 3D NAND flash according to an embodiment of the present invention. The 3D NAND flash may include a plurality of bit lines, wherein the bit lines comprise a plurality of wordline (WL) layers. The programming process 10 for the 3D NAND flash includes the following steps:

(7) Step 102: Start.

(8) Step 104: Program a select wordline of an unselect bit line of the 3D NAND flash.

(9) Step 106: Perform a first verification process with at least a verification voltage on the select wordline.

(10) Step 108: Determine whether a first verification voltage of the first verification process for the select wordline is higher than a default voltage or not. If yes, go to step 110; if no, go to step 104.

(11) Step 110: Remove a pre-pulse phase of an increment step pulse program (ISPP) when the first verification voltage is higher than the default voltage.

(12) Step 112: Determine whether the first verification voltage meets a target threshold voltage or not. If yes, go to step 120; if no, go to step 114.

(13) Step 114: Program the select wordline of the 3D NAND flash.

(14) Step 116: Perform a second verification process on the select wordline of the 3D NAND flash.

(15) Step 118: Determine whether a second verification voltage meets the target threshold voltage or not. If yes, go to step 120; if no, go to step 114.

(16) Step 120: Inhibit the select wordline of the 3D NAND flash when the second verification voltage of the second verification process meets the target threshold voltage.

(17) Step 122: End.

(18) The programming process 10 may be executed by a controller (not illustrated in the drawings) of the 3D NAND flash. As shown in FIG. 2, which is a schematic diagram of the unselect bit line of a 3D NAND flash applying the programming process 10 according to an embodiment of the present invention, the unselect bit line includes a top select gate TSG, a plurality of upper wordline layers, a wordline WLn layer, a plurality of lower wordline layers and a bottom select gate BSG.

(19) Since the write operation of the 3D NAND flash may be started from one end of the top select gate TSG or the bottom select gate BSG, in an embodiment, the data is written from the bottom select gate BSG to the top select gate TSG, but is not limited thereto. The write operation of the 3D NAND flash may be started from the top select gate TSG to the bottom select gate BSG in other embodiments.

(20) According to the programming process 10, in step 104, the select wordline WLn of the unselect bit line of the 3D NAND flash is programmed.

(21) In an embodiment, the select wordline WLn is programmed by the ISPP. In step 106, the first verification process with at least a verification voltage on the select wordline WLn is performed. For example, when the 3D NAND flash is a multi-level cell (MLC) 3D NAND flash, memory cells of the 3D NAND flash may be programmed into four states corresponding to bit codes 11, 10, 01, 00, i.e. programmed states P0, P1, P2, P3, by verification voltages PV1, PV2, PV3 based on the first verification process. In another embodiment, when the 3D NAND flash is a triple-level cell (TLC) 3D NAND flash, memory cells of the 3D NAND flash may be programmed into eight states corresponding to bit codes 111, 110, 010, 011, 001, 000, 100, 101, by verification voltages PV1-PV7 based on the first verification process. Therefore, the select wordline WLn of the unselect bit line of the MLC 3D NAND flash may be programmed at the programmed state P1, P2 or P3.

(22) In step 108, the first verification voltage of the first verification process for the select wordline WLn is determined to be higher than a default voltage or not. The first verification voltage is a following verification voltage of the first verification process. For example, when the select wordline WLn of the unselect bit line of the MLC 3D NAND flash is programmed at the programmed state P1, the first verification voltage of the first verification process is the programmed state P2 and is utilized for the determination of step 108.

(23) In step 110, when the first verification voltage is higher than the default voltage, the pre-pulse phase of the ISPP is removed. In contrast, when the first verification voltage is lower than or equal to the default voltage, the programming process 10 goes to step 104.

(24) Please refer to FIG. 3, which is a schematic diagram of distributions of channel potential of the unselect bit line of the 3D NAND flash according to an embodiment of the present invention. FIG. 3 illustrates the distributions of channel potential when the select wordline WLn layer passes the verification voltages PV1, PV2 and PV3 without the pre-pulse phase and a distribution of channel potential when the select wordline WLn layer passes any verification voltage with the pre-pulse phase.

(25) Accordingly, when the first verification voltage is between the verification voltage PV2 and the verification voltage PV3, a difference d1 between the verification voltage PV3 and any verification voltage with the pre-pulse phase is reduced. In addition, the electrons injected from a wordline layer WLn+1, which is in an erased state, to the wordline layer WLn, which is in a programmed state, of the unselect bit line is reduced in comparison to differences d2 and d3.

(26) After the pre-pulse phase of the ISPP is removed, in step 114, the select wordline WLn of the 3D NAND flash is programmed. In step 116, a second verification process is performed on the select wordline WLn of the 3D NAND flash. Different from the first verification process, which verifies the memory cells of the 3D NAND flash respectively based on the verification voltages PV1, PV2, PV3, that is, from a lower programmed state to a higher programmed state, the second verification process is configured to verify the memory cells of the 3D NAND flash from a higher programmed state to a lower programmed state. For example, if the MLC 3D NAND flash is programmed at the programmed state P0 in the first verification process and the first verification voltage is higher than the default voltage, the second verification process firstly verifies the MLC 3D NAND flash at the programmed state P2 and then verifies the programmed state P1, which reduces an amount of cells of the MLC 3D NAND flash for the verification at lower programmed states.

(27) In step 118, a second verification voltage of the second verification process is determined to be higher than the target threshold voltage or not, wherein the second verification voltage is a following verification voltage of the second verification process. For example, when the select wordline WLn of the unselect bit line of the MLC 3D NAND flash is programmed at the programmed state P2, the second verification voltage of the second verification process is the programmed state P3 and is utilized for the determination of step 118.

(28) When the second verification voltage is higher than the target threshold voltage, the programming process 10 goes to step 120. In contrast, when the second verification voltage is lower than or equal to the target threshold voltage, the programming process 10 goes to step 114.

(29) Please refer to FIG. 4, which is a waveform diagram of the unselect bit string of the 3D NAND flash applying the programming process 10 according to an embodiment of the present invention. As shown in FIG. 4, the unselect bit string includes an unselect bit line, a select bit line, a select upper select gate word line, the unselect wordlines, the select wordline WLn layer, a lower select wordline, a common source line and a substrate. In FIG. 4, after an N-th program operation, which includes a pre-charge phase and a programming phase, an N-th verify phase, which includes the verify phase and a pre cut-off phase, is performed.

(30) As illustrated in FIG. 4, the pre-pulse phase of the N-th verify phase is removed and the select wordline WLn is verified from a higher programmed state to a lower programmed state, which reduces the write time of the 3D NAND flash and reduces the electron injection between the wordline WLn+1 and the wordline WLn. As such, the interference is reduced.

(31) In step 120, the select wordline WLn of the 3D NAND flash is inhibited when the first verification voltage meets the target threshold voltage in step 112 or when the second verification voltage of the second verification process meets the target threshold voltage in step 118.

(32) Notably, the embodiments stated above illustrate the concept of the present invention, those skilled in the art may make proper modifications accordingly, for example, other kinds of 3D NAND flash, e.g. quad-level cell (QLC) and single-level cell (SLC), are all within the scope of the present invention, and not limited thereto.

(33) In summary, the present invention provides a programming method for 3D NAND flash and a 3D NAND flash, which reduces a write time of the 3D NAND flash by removing a pre-pulse phase of the ISPP, power consumption and electron injection between wordline layers.

(34) Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.