DEEP INTRACRANIAL ELECTRODE, ELECTROENCEPHALOGRAPH AND MANUFACTURING METHOD THEREOF

Abstract

A method for manufacturing a deep intracranial electrode, a bending-resistant deep intracranial electrode and an electroencephalograph is disclosed. The method comprises the following steps: manufacturing a support rod of the deep intracranial electrode with a shape memory alloy material, the shape memory alloy having a preset phase-transformation temperature; subjecting the support rod in a straight state to an annealing process such that the support rod memorizes a straight shape.

Claims

1. A method for manufacturing bending-resistant deep intracranial electrode, comprising: manufacturing a support rod of a deep intracranial electrode with a shape memory alloy material, the shape memory alloy having a preset phase-transformation temperature; subjecting the support rod in a straight state to an annealing process such that the support rod memorizes a straight shape.

2. The method for manufacturing bending-resistant deep intracranial electrode of claim 1, wherein the shape memory alloy material is a nickel-titanium shape memory alloy, the preset phase-transformation temperature being a first phase-transformation temperature higher than a storage and ambient temperature of the deep intracranial electrode; when the deep intracranial electrode is deformed, heating up the deep intracranial electrode to be over the first phase-transformation temperature to recover the support rod of the deep intracranial electrode to the straight shape.

3. The method for manufacturing bending-resistant deep intracranial electrode of claim 1, wherein the shape memory alloy material is a nickel-titanium shape memory alloy, the preset phase-transformation temperature being a second phase-transformation temperature lower than a storage and ambient temperature of the deep intracranial electrode; when the deep intracranial electrode is deformed, standing the deep intracranial electrode for a preset time to recover the support rod of the deep intracranial electrode to the straight shape.

4. A bending-resistant deep intracranial electrode, comprising an intracranial electrode support device, a plurality of electrode contacts and a flexible catheter, the intracranial electrode support device comprising an insulated support rod and a flexible sleeve, the plurality of electrode contacts fixed outside the flexible sleeve, wherein the support rod is installed inside the flexible sleeve, and a gap receiving conducting wires of the plurality of electrode contacts is defined between the support rod and the flexible sleeve; the support rod is made of a shape memory alloy material which is subjected to an annealing process and with a preset phase-transformation temperature such that the support rod recovers to an original shape after being deformed by an external force.

5. The bending-resistant deep intracranial electrode of claim 4, wherein the shape memory alloy material is a non-magnetic shape memory alloy material.

6. The bending-resistant deep intracranial electrode of claim 5, wherein the shape memory alloy material is a nickel-titanium shape memory alloy, the preset phase-transformation temperature being a first phase-transformation temperature higher than a storage and ambient temperature of the deep intracranial electrode.

7. The bending-resistant deep intracranial electrode of claim 5, wherein the shape memory alloy material is a nickel-titanium shape memory alloy, the preset phase-transformation temperature being a second phase-transformation temperature lower than a storage and ambient temperature of the deep intracranial electrode.

8. The bending-resistant deep intracranial electrode of claim 4, wherein the bending-resistant deep intracranial electrode further comprises a connector connecting the flexible catheter and a shield sleeve, the flexible catheter being folded and received in the shield sleeve; by pulling out a preset length of the flexible catheter from the shield sleeve, a conductor length is varied and a resonant heating of the bending-resistant deep intracranial electrode is reduced.

9. The bending-resistant deep intracranial electrode of claim 8, wherein a plurality of electrode conducting wires of the plurality of electrode contacts are received in the flexible catheter, each electrode contact being electrically connected to corresponding connection terminal of the connector via the electrode conducting wires.

10. The bending-resistant deep intracranial electrode of claim 4, wherein the intracranial electrode supporting device is connected to the flexible catheter via a guiding fixing assembly, the guiding fixing assembly comprising a guiding fixing screw and a guiding fixing nut which are for clasping and connecting the support rod, the flexible sleeve and the flexible catheter.

11. The bending-resistant deep intracranial electrode of claim 8, wherein a tensile fiber is disposed between each electrode contact on the electrode support device and a corresponding connecting terminal of the connector.

12. The bending-resistant deep intracranial electrode of claim 4, wherein a length of the flexible catheter is less than that of an electrode body within the flexible catheter.

13. An electroencephalograph, connected to a plurality of deep intracranial electrodes, each deep intracranial electrode comprising an intracranial electrode support device, a plurality of electrode contacts and a flexible catheter, the intracranial electrode support device comprising an insulated support rod and a flexible sleeve, the plurality of electrode contacts fixed outside the flexible sleeve, wherein the support rod is installed inside the flexible sleeve, and a gap receiving conducting wires of the plurality of electrode contacts is defined between the support rod and the flexible sleeve; the support rod is made of a shape memory alloy material which is subjected to an annealing process and with a preset phase-transformation temperature such that the support rod recovers to an original shape after being deformed by an external force.

14. The electroencephalograph of claim 13, wherein the shape memory alloy material is a non-magnetic shape memory alloy material.

15. The electroencephalograph of claim 14, wherein the shape memory alloy material is a nickel-titanium shape memory alloy, the preset phase-transformation temperature being a first phase-transformation temperature higher than a storage and ambient temperature of the deep intracranial electrodes.

16. The electroencephalograph of claim 14, wherein the shape memory alloy material is a nickel-titanium shape memory alloy, the preset phase-transformation temperature being a second phase-transformation temperature lower than a storage and ambient temperature of the deep intracranial electrodes.

17. The electroencephalograph of claim 13, wherein each of the deep intracranial electrodes further comprises a connector connecting the flexible catheter and a shield sleeve, the flexible catheter being folded and received in the shield sleeve; by pulling out a preset length of the flexible catheter from the shield sleeve, a conductor length is varied and a resonant heating of the bending-resistant deep intracranial electrode is reduced.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0037] One or more embodiments will be described for exemplary purpose in accompany with corresponding drawings, which descriptions do not constitute limitation to embodiments of the present disclosure. Like reference numbers labeled in the drawings indicate similar components. Unless otherwise indicated, the drawings do not constitute limitation to the present disclosure.

[0038] FIG. 1 is a structural schematic view of a bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0039] FIG. 2 is a structural view of an implanted head end and a flexible catheter of the bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0040] FIG. 3 is a perspective breakdown view of a support device of the bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0041] FIG. 4 is a structural schematic view of a head end of the bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0042] FIG. 5 is a structural schematic view of the support device of the bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0043] FIG. 6 is an intracranial imaging schematic view of an electroencephalograph according to an embodiment of the present application.

[0044] FIG. 7 is a curve graph of a length of a short conductor versus resonance heating of the bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0045] FIG. 8 is a schematic view of clinical application of a conductor of the bending-resistant deep intracranial electrode received into a shield sleeve.

[0046] FIG. 9 is a schematic curve graph of a length of a long conductor versus resonance heating of the bending-resistant deep intracranial electrode according to an embodiment of the present application.

[0047] FIG. 10 is a schematic view of clinical application of a conductor of the bending-resistant deep intracranial electrode pulled completely out from the shield sleeve.

[0048] FIG. 11 is a flow chart of a method for manufacturing the bending-resistant deep intracranial electrode.

DETAILED DESCRIPTION OF EMBODIMENTS

[0049] Technical solutions in the embodiments of the present disclosure will be described clearly and completely with reference to the drawings. Obviously, the embodiments described below are only some, but no exclusive of the embodiments of the present disclosure. Based on the embodiments described in this present disclosure, all other embodiments obtained by those ordinarily skilled in the field without paying creative works should fall within the scope of the present application.

[0050] It should be noted that any directional indication (such as top, bottom, left, right, front, back . . . ) involved in the embodiment of the present application is only used to explain relative location relations and motion among each component under a specific position (as shown in the drawings). If the specific position varies, the directional indication varies accordingly.

[0051] Furthermore, the terms first, second and the like involved in the embodiment of the present application are merely for illustrative purpose, but not intended to indicate or imply relative importance, or imply the number of associated features. Therefore, the features limited by first and second may explicitly or implicitly include at least one of these features. In addition, the technical solutions among each embodiment may be combined with each other, however, the combination must be capable of being realized by those ordinarily skilled in the field. When the combination of technical solutions is contradictory or cannot be realized, the combination of such technical solutions shall not be deemed as existing and shall not fall within the scope of the present application.

[0052] Referring to FIG. 1, an embodiment concerns a method for manufacturing a bending-resistant deep intracranial electrode, a bending-resistant deep intracranial electrode and an electroencephalograph.

[0053] The bending-resistant deep intracranial electrode is inserted into the patient's targeted intracranial area through minimally invasive surgery like craniotomy or drilling. For example, the scalp and skull are surgically perforated with a 2 mm micropore, and the deep electrode is placed in the targeted area deep in the deep brain. Based on three-dimensional brain network concept integrating anatomy, electricity and clinic, the epileptic foci are explored and located with aid of the stereoelectroencephalography, as shown in FIG. 6. The stereoelectroencephalography involves three-dimensional reconstruction of cerebral cortex, three-dimensional reconstruction of cerebrovascular, skull MRI, CT angiography, PET-CT and other imaging fusion technologies. The stereoelectroencephalography further involves associated surgical hardware equipment and electrode implantation plan systems. The stereoelectroencephalography is a safe, reliable and minimally invasive intracranial electrode implantation system which has been verified in international clinical application.

[0054] In the method for manufacturing the deep intracranial electrode, the bending-resistant deep intracranial electrode and the electroencephalograph provided by the embodiment, the support rod 12 in an implanted end of the electrode is made of a shape memory alloy material. While collecting the deep electrophysiological signals from the patients, the support rod 12 provides the bending-resistant deep intracranial electrode with special protective measures, and makes the implanted end of the electrode recover to its original shape after being deformed by external force, improving bending-resistant capability of the implanted end of the electrode and prolonging service life of the medical apparatus and equipment.

[0055] The shape memory alloys (SMA) in the embodiment are materials made of two or more metal elements, and have shape memory effect (SME) processed by thermo-elastic and martensite phase-transformation and contravariants thereof.

[0056] The shape memory effect of the shape memory alloys results from the thermo-elastic martensite phase-transformation. Once the martensite is formed, it will continue to grow as the temperature drops, and decrease as the temperature rises, disappearing in a reversed process. The difference between the two free energies is the driving force for the phase-transformation. Another property of shape memory alloy is super elasticity. The shape memory alloy material possesses much better deformation recovery capacity than other metals under external force, that is, large strain generated in a loading process will recover along with an unloading process.

[0057] This embodiment adopts nickel-titanium shape memory alloys applied in medical field. In addition to taking advantage of shape memory effect or super elasticity thereof, the alloys also meet chemistry and biology requirements, which refers to good biocompatibility. The nickel-titanium shape memory alloys may form a stable passivation film with organisms.

The First Embodiment

[0058] Referring to FIG. 11, a method for manufacturing a bending-resistant deep intracranial electrode provided by the embodiment comprises:

[0059] At block 101, a support rod of the deep intracranial electrode is manufactured with a shape memory alloy material. The shape memory alloy has a preset phase-transformation temperature.

[0060] At block 102, the support rod in a straight state is subjected to an annealing process such that the support rod memorizes a straight shape.

[0061] As a first embodiment, the shape memory alloy material is a nickel-titanium shape memory alloy (NiTi). The preset phase-transformation temperature is a first phase-transformation temperature higher than a storage and ambient temperature of the deep intracranial electrode.

[0062] The phase-transformation temperature Af of the shape memory alloy is associated with composition ratios of each element. By accurately adjusting the ratios of each element in the NiTi alloy, the phase-transformation temperature Af of the shape memory alloy can be higher than the storage and ambient temperature of the electrode. The first phase-transformation temperature is preferably 50 C. The shape memory alloy material is manufactured to be a slender support rod, which will memorize the current straight shape after being subjected to the annealing process.

[0063] When the deep intracranial electrode is deformed, the deep intracranial electrode is heat up to be over the first phase-transformation temperature to recover the support rod of the deep intracranial electrode to an original straight shape.

[0064] In the process of us, if the deep intracranial electrode is bent, only by blowing with hot wind or immersing in hot water may the front end of the electrode be heated up to over the first phase-transformation temperature Af of the shape memory alloy, and the support rod may recover to the original straight shape.

[0065] As a second embodiment, the shape memory alloy material is also a nickel-titanium shape memory alloy. The difference is that the preset phase-transformation temperature is a second phase-transformation temperature lower than a storage and ambient temperature of the deep intracranial electrode.

[0066] In a preferable embodiment, the second phase-transformation temperature may be 0 C. or 20 C. the slender support rod manufactured using the NiTi shape memory alloy materials with the second phase-transformation temperature and subjected to the annealing process may memorize current straight shape. In the second embodiment, the ambient temperature is over the second phase-transformation temperature Af of the NiTi shape memory alloy material, such that the support rod has super elasticity. The super elasticity indicates that even when the material is subjected to a plastic deformation beyond elastic limit thereof, the support rod may still recover to its original straight shape slowly.

[0067] When the deep intracranial electrode is deformed, the deep intracranial electrode is stood for a preset time for the support rod of the deep intracranial electrode to recover to the original straight shape. In the process of use, if the front end of the electrode is bent accidentally, only by standing the deep intracranial electrode for a preset time may the support rod recover to the original straight shape.

The Second Embodiment

[0068] An electroencephalograph in the present embodiment is configured to monitor bioelectrical amplification of brain electrophysiological signals and an imaging equipment.

[0069] As shown in the drawings, the electroencephalograph is connected to a plurality of deep intracranial electrodes.

[0070] Each of the bending-resistant deep intracranial electrodes comprises an intracranial electrode support device 1, a plurality of electrode contacts 14, a flexible catheter 22, a connector 3 connected to the flexible catheter and a shield sleeve 2.

[0071] The intracranial electrode support device 1 comprises an insulated support rod 12, a flexible sleeve 11 and the plurality of electrode contacts 14.

[0072] The support rod 12 is installed inside the flexible sleeve 11. The plurality of electrode contacts 14 is fixed outside the flexible sleeve 11. A gap receiving conducting wires of the plurality of electrode contacts 14 is defined between the support rod 12 and the flexible sleeve 11. The support rod 12 is made of a shape memory alloy material which is subjected to an annealing process and with a preset phase-transformation temperature such that the support rod 12 recovers to an original shape after being deformed by an external force.

[0073] A plurality of electrode conducting wires of the plurality of electrode contacts 14 are received in the flexible catheter 22, each electrode contact being electrically connected to corresponding connection terminal of the connector 3 via the electrode conducting wires.

[0074] In order to avoid resonant heating, the medicinal shape memory alloy material is a non-magnetic shape memory alloy material.

[0075] As a first embodiment, the non-magnetic shape memory alloy material is a nickel-titanium shape memory alloy (TiNi). The preset phase-transformation temperature is a first phase-transformation temperature higher than a storage and ambient temperature of the deep intracranial electrodes.

[0076] As in another embodiment, the non-magnetic shape memory alloy material is a nickel-titanium shape memory alloy (TiNi). The preset phase-transformation temperature is a second phase-transformation temperature lower than the storage and ambient temperature of the deep intracranial electrodes.

[0077] In order to improve compatibility with the magnetic resonance imaging equipment, the length of bare conductor of the flexible catheter 22 of the bending-resistant deep intracranial electrode in the present embodiment is adjustable.

[0078] The bending-resistant deep intracranial electrode further comprises a connector 3 connecting the flexible catheter 22 and a shield sleeve 2. The flexible catheter 22 is folded and received in the shield sleeve 2. By pulling out a preset length of the flexible catheter 22 from the shield sleeve 2, a conductor length is varied and a resonant heating of the bending-resistant deep intracranial electrode is reduced.

[0079] In the imaging process of magnetic resonance imaging, implanted or semi-implanted medical devices implanted in the body of the patient interacts with the magnetic resonance imaging. The greatest security risk caused by the resonance that the slender conductor structure of the bending-resistant deep intracranial electrode may be heated due to radio frequency induction. Intracranial resonance heating of the implants is very dangerous to the patient's health.

[0080] The length of the conductor is analyzed to be an important influence factor for the heating of the conductor of the bending-resistant deep intracranial electrode. Relations between the heating level versus the length of the conductor are as shown in FIGS. 7 and 9. The implanted end of the bending-resistant deep intracranial electrode is heated severely when the length of the conductor is a particular length around a peak value. The particular length is called resonant length. The greater the difference between the overall length of the conductor of the bending-resistant deep intracranial electrode and the resonance length is, the milder the implanted end of the electrode is heated. Therefore, in order to lessen radio-frequency induction heating, the overall length of the electrode conductor should be far different from the resonant length.

[0081] However, the length of the electrode conductor is limited by different scenario device performances. A particular value has to be set which is proximate to the resonance length. The resonance length of the electrode conductor is relevant to parameters of the magnetic resonance imaging equipment. For example, for an identical electrode conductor, a resonance length in a 1.5 T magnetic resonance imaging equipment differs from that in a 3.0 T magnetic resonance imaging equipment. In the 1.5 T magnetic resonance imaging equipment, the resonance length of an identical electrode conductor equals to around twice that in the 3.0 T magnetic resonance imaging equipment. Therefore, the length of the electrode conductor in the present embodiment may be designed to be adjustable such as to be compatible with different magnetic resonance imaging equipment.

[0082] In the present embodiment, the shield sleeve 2 of the deep intracranial electrode is designed to receive a folded part of the flexible catheter 22, an electrode conductor being installed in the flexible catheter 22. The length of the electrode conductor may be adjusted by changing folded length of the flexible catheter 22 inside the shield sleeve 2. As shown in FIG. 8, a semi-implanted electrode conductor with an original length of L is bent and installed in the shield sleeve 2 capable of shielding magnetic resonance imaging radio-frequency electromagnetic wave.

[0083] Referring to FIGS. 7 and 8, the semi-implanted electrode conductor with the original length of L is bent and installed into the shield sleeve 2 which is capable of shielding the magnetic resonance imaging radio-frequency electromagnetic wave. The length of the folded electrode conductor is L. Since the magnetic resonance imaging radio-frequency electromagnetic wave cannot penetrate the shield sleeve 2, the folded part of the electrode conductor is shielded in the magnetic resonance imaging radio-frequency magnetic field. The conductor with the original length of L is equivalent to the electrode conductor with a length of L as shown in FIG. 8, where L<L. If L is further different from the resonance length than L is, the risk of radio-frequency induction heating at the implanted end of electrode conductor can be reduced.

[0084] Referring to FIGS. 9 and 10, the length of electrode conductor in the embodiment shown is increased. The semi-implantable electrode conductor with the original length of L is pulled completely out of the shield sleeve 2 which shields the radio-frequency electromagnetic wave, and the length of the electrode conductor after being pulled out completely is L. As shown in FIG. 10, in this embodiment, the shield sleeve 2 sleeves around an end of the electrode conductor. The shield sleeve 2 may shield a hollow part free of electrode conductor segment at the end, and convert the conductor with the original length of L into an electrode conductor with an equivalent length of L, in which L>L. If L is further different from the resonance length than L is, the risk of radio-frequency induction heating at the implanted end of electrode conductor can also be reduced.

[0085] Therefore, specific lengths of the shield sleeve 2 require to be designed respectively for 1.5 T and 3.0 T magnetic resonance imaging equipment. In the application of 1.5 T and 3.0 T magnetic resonance imaging equipment, equivalent lengths of semi-implanted electrode conductor may be extended or shortened according to the equipment requirements respectively to achieve the purpose of reducing the risk of radio-frequency induction heating.

The Third Embodiment

[0086] This embodiment concerns a detailed description of the bending-resistant deep intracranial electrode in the first embodiment.

[0087] Referring to FIGS. 2 and 5, the majority of the intracranial implanted part of the bending-resistant deep intracranial electrode in this embodiment is an insulated support rod 12, an external part of the support rod is sleeved by a flexible sleeve 11. A plurality of annular electrode contacts 14 are arranged at the end of the support rod 12. The implanted end of the bending-resistant deep intracranial electrode is surgically implanted into the intracranial of the patient, such that the plurality of electrode contacts 14 may directly contact the deep brain tissue of the patient, and detect the deep brain electrophysiological activities of the patient.

[0088] The flexible sleeve is provided with a scale 16 and a fixation connection mark 17 at an end external to cranial.

[0089] The deep intracranial electrode comprises an intracranial electrode support device 1, a plurality of electrode contacts, a flexible catheter 22, a connector 3 connected to the flexible catheter 22 and a shield sleeve 2. The flexible catheter 22 is an insulated tube.

[0090] As shown in FIGS. 3 and 4, the plurality of electrode contacts 14 include a first electrode contact 141, a second electrode contact 142, a third electrode contact 143, a fourth electrode contact 144, a fifth electrode contact 145, a sixth electrode contact 146, a seventh electrode contact 147, and an electrode contact head 13.

[0091] The intracranial electrode support device 1 comprises an insulated support rod 12 and a flexible sleeve 11.

[0092] As shown in FIG. 6, the plurality of electrode contacts is fixed outside the flexible sleeve 11. The support rod 12 is installed inside the flexible sleeve 11, and a gap receiving conducting wires of an electrode conductor, such as the electrode conductor 151, of the plurality of electrode contacts 14 is defined between the support rod 12 and the flexible sleeve 11. The support rod 12 is made of a shape memory alloy material which is subjected to an annealing process and with a preset phase-transformation temperature, such that the support rod 12 may recover to an original shape after being deformed by an external force.

[0093] In order to reduce the harm of resonance heating to the patients, the medicinal shape memory alloy material is a non-magnetic shape memory alloy material.

[0094] As a first embodiment, the non-magnetic shape memory alloy material is a nickel-titanium shape memory alloy (TiNi). The preset phase-transformation temperature is a first phase-transformation temperature higher than a storage and ambient temperature of the deep intracranial electrodes.

[0095] As in another embodiment, the non-magnetic shape memory alloy material is a nickel-titanium shape memory alloy (TiNi). The preset phase-transformation temperature is a second phase-transformation temperature lower than a storage and ambient temperature of the deep intracranial electrodes.

[0096] The flexible catheter 22 is folded and received in the shield sleeve 2. By pulling out a preset length of the flexible catheter 22 from the shield sleeve 2, a conductor length is varied and a resonant heating of the bending-resistant deep intracranial electrode is reduced. Detailed implementation is as described in the first embodiment.

[0097] A plurality of electrode conducting wires of the plurality of electrode contacts 14 are led out of skull and received in the flexible catheter 22. Along the flexible catheter 22, each electrode contact 14 is electrically connected to corresponding connection terminal of the connector 3 via the electrode conducting wires.

[0098] Each connection terminal of the connector 3 is arranged at the electrode conductor inside the flexible catheter, and connected respectively to the electrode contacts 14 of the implanted end. The connector 3 is plugged in the electroencephalograph. The electrophysiological signals collected at the electrode contacts are transmitted to the electroencephalograph through the electrode conductor and the connector 3, and hence forms intracranial electrophysiological images.

[0099] In the present embodiment, the intracranial electrode supporting device 1 is fixedly connected to the flexible catheter 22 at the fixation connection mark 17 via the guiding fixing assembly 23.

[0100] In localization and fixation of the protrusion head of the implanted end, the guiding fixing assembly 23 comprises a guiding fixing screw and a guiding fixing nut which are for clasping and connecting the support rod 12, the flexible sleeve 11 and the flexible catheter 22.

[0101] In order to lessen force applied to the electrode conductor, a tensile fiber is disposed between each electrode contact on the electrode support device and a corresponding connecting terminal of the connector 3. By arranging a slim rope made of a non-stretchable fibrous material inside the tube of the bending-resistant deep intracranial electrode, the slim rope may be fixedly connected to the electrode contacts at two ends of the electrode conductor as well as corresponding connection terminal of the connector 3. When the electrode body is pulled, the slim rope made of the non-stretchable fibrous material may bear the tension, improving tensile strength of the bending-resistant deep intracranial electrode.

[0102] At the same time, the length of the flexible catheter 22 is shorter than that of the electrode body inside the flexible catheter.

[0103] The flexible catheter 22 adopts a sleeve made of non-stretchable transparent material. One end of the flexible catheter 22 is connected to the connector 3 via a fixed part, the other end fixedly connected to the guiding fixing assembly 23 via the fixation nut. The length of the sleeve is slightly shorter than that of the electrode body inside the tube. While under pulling force, the flexible catheter 22 bears the tension, and the electrode body inside the tube may still keep a loose state all the time and avoid being damaged by the tension.

[0104] In the method for manufacturing the deep intracranial electrode, the bending-resistant deep intracranial electrode and the electroencephalograph provided by the embodiments, the support rod 12 in the implanted end of the electrode is made of the shape memory alloy material and provides the bending-resistant deep intracranial electrode with special protective measures, and makes the implanted end of the electrode recover to its original shape after being deformed by external force, improving bending-resistant capability of the implanted end of the electrode and prolonging service life of the medical apparatus and equipment.

[0105] In the method for manufacturing the deep intracranial electrode, the bending-resistant deep intracranial electrode and the electroencephalograph provided by the embodiments, the support rod 12 of the implanted end of the electrode is made of a non-magnetic shape memory alloy material, which is compatible with high field magnetic resonance imaging operations, such that the bending-resistant deep intracranial electrode is implanted, at the same time, high field magnetic resonance imaging is performed simultaneously. For example, 3.0 TMRI compatibility is realized, and artifacts in magnetic resonance imaging caused by the electrode is also eliminated.

[0106] In the method for manufacturing the deep intracranial electrode, the bending-resistant deep intracranial electrode and the electroencephalograph provided by the embodiments, protection to the electrode conductor is strengthened by various structural design. For example, the length of the flexible catheter 22 is shorter than that of the electrode body inside the tube; furthermore, the tensile fiber is disposed between each electrode contact on the electrode support device and a corresponding connecting terminal of the connector 3. The structures above may avoid electrode from being broken when the patient pull the electrode accidentally in the process of continuous electroencephalography detection.

[0107] Above all, it should be noted that the above embodiments are merely for illustrating instead of limiting technical solutions of the present application. The technical features of each of the above embodiments or among different embodiments may also be combined under the principle of the present application. The steps may be implemented in any order, and there exist many alternative variations from different aspects of the present application described above, which are not provided in detail for simplicity purpose. Although the present application is described in detail, those ordinarily skilled in the field shall understand that they may still modify the technical solutions recorded in the foregoing embodiments, or replace some equivalent technical features thereof. Such modifications or replacements do not deviate the principle of corresponding technical solutions from the scope of the technical solutions of each embodiment of the present application.