Advanced metal interconnects

Abstract

A method of fabricating a metallization layer of a semiconductor device in which one or more interconnect structures are to be formed includes depositing a dielectric layer and forming a trench for each interconnect structure to be formed in the metallization layer. An insulating liner layer is deposited that serves both as a metal diffusion barrier and as a metal adhesion layer for the interconnect structures.

Claims

1. A method, comprising: in a fabrication stage of a metallization layer of a semiconductor device in which one or more interconnect structures are to be formed, initially depositing a dielectric layer as a basis for said metallization layer; forming a trench in said dielectric layer for each interconnect structure to be formed in said metallization layer; and depositing an insulating liner layer that serves both as a metal diffusion barrier and as a metal adhesion layer for said interconnect structures, wherein said insulating liner layer comprises one of Ta.sub.3N.sub.5 and M(N,O), where M is any of Ta, Ti, Mn, Ni, W, Hf, Mg, Cr, Ga, V, Co, and Cu.

2. The method of claim 1, wherein said insulating liner layer comprises any of: Ta.sub.3N.sub.5, TaNO, TiNO, MnNO, NiNO, and WNO.

3. The method of claim 1, wherein said insulating liner layer comprises a plurality of layers.

4. The method of claim 1, further comprising: depositing a metal to fill the trenches formed in said dielectric layer and to form an overburden layer; performing a heat anneal procedure for said deposited metal; and polishing to remove said annealed metal in said overburden layer, said polishing to stop at a level of approximately a top surface said insulating liner layer.

5. The method of claim 4, wherein a size of metal grains at a top portion of said interconnect structures is larger than a size of metal grains at a bottom portion of said interconnect structures.

6. The method of claim 4, wherein said polishing is terminated upon detecting that said polishing has removed sufficient overburden metal material so that interconnect structures formed in two different trenches are electrically disconnected.

7. The method of claim 4, wherein said metal fill comprises copper (Cu).

8. The method of claim 4, wherein said metal fill comprises any of: copper (Cu), cobalt (Co), ruthenium (Ru), tungsten (W), aluminum (Al), nickel (Ni), rhodium (Rh), and iridium (Ir).

9. The method of claim 4, further comprising depositing a second insulating liner layer on top of the polished annealed metal, the second insulating liner layer thereby causing a continuous insulating liner to surround each said interconnect structure in said metallization layer, as well as forming a continuous insulating liner layer over a field area around each said interconnect structure.

10. A semiconductor chip, as fabricated using the method of claim 1.

11. A semiconductor device comprising a semiconductor chip of claim 10.

12. A semiconductor device, comprising: a substrate having a plurality of electronic component elements fabricated on a top surface thereof, in a device layer; and a plurality of metallization layers formed successively on top of said device layer, to interconnect said electronic component elements, each said metallization layer having a different interconnect pattern, wherein at least one metallization layer includes one or more interconnect structures formed in a dielectric layer, and at least one said interconnect structures comprises: a fill metal; and an insulating liner layer that surrounds said fill metal on sides and bottom in a cross-sectional view and that serves both as a metal diffusion barrier and as a metal adhesion layer for said interconnect structure, wherein a size of metal grains at a top portion of said interconnect structure in said cross sectional view is larger than a size of metal grains at a bottom portion of said interconnect structure, and wherein said insulating liner layer comprises one of Ta.sub.3N.sub.5 and M(N,O), where M is any of Ta, Ti, Mn, Ni, W, Hf, Mg, Cr, Ga, V, Co, and Cu.

13. The semiconductor device of claim 12, wherein said insulating liner layer comprises any of: Ta.sub.3N.sub.5, TaNO, TiNO, MnNO, NiNO, and WNO.

14. The semiconductor device of claim 12, wherein said metal fill comprises any of: copper (Cu), cobalt (Co), ruthenium (Ru), tungsten (W), aluminum (Al), nickel (Ni), rhodium (Rh), and iridium (Ir).

15. The method of claim 4, wherein the depositing of the insulating liner layer comprises depositing the insulating liner layer in the trench and on the dielectric layer outside the trench, and wherein the method further comprises: forming a capping layer on the metal in the trenches and on the insulating liner layer outside the trenches.

16. The method of claim 1, wherein a thickness of the insulating liner layer is in a range from 2 to 500 .

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A illustrates a cross section view 100 of an interconnect 102 in a conventional post Cu plating and thermal annealing stage of the fabrication of a metallization layer;

(2) FIG. 1B illustrates a cross section view 110 of a conventional post CMP stage of the same metallization layer;

(3) FIG. 2A illustrates a cross section view 200 of an interconnect 204 in the post Cu plating stage in an exemplary embodiment of the present invention using insulating liner 202;

(4) FIG. 2B illustrates a cross section view 210 of the interconnect 204 at the post CMP stage utilizing the present invention;

(5) FIG. 3A illustrates a cross section view 300 of an initial fabrication stage showing trenches 302, 304 etched in the dielectric layer of a metallization layer;

(6) FIG. 3B illustrates a cross section view 310 of the insulator liner deposition stage;

(7) FIG. 3C illustrates a cross section view 320 of the metal fill deposition stage;

(8) FIG. 3D illustrates a cross section view 330 of the planarization stage; and

(9) FIG. 3E illustrates a cross section view 340 of the capping layer deposition stage.

DETAILED DESCRIPTION

(10) FIG. 2A shows a first exemplary embodiment of the present invention in which insulating layer 202 is deposited before the Cu deposition. As shown in FIG. 2B, this insulation layer 202 replaces the conductive metallic liner 106 used in the conventional structure shown in FIG. 1A and FIG. 1B. This substitution of materials eliminates the need for the Cu over polish of the conventional fabrication shown in FIG. 1B. A key consequence of eliminating the over polish is that more large Cu grains 206 remain in the resultant interconnect structure 204, as is clear in comparing FIGS. 1B and 2B.

(11) Because of these larger grains 206, the resultant interconnect structure 204 has lower electrical resistivity and better interconnect reliability, even if the relative cross sectional areas of the interconnect structures of FIGS. 1B and 2B were to be equalized. That is, compared to a conventional interconnect structure containing only small grains, a reduction of electrical resistivity of the conductor is achieved by eliminating or decreasing the resistance contribution from the grain boundary scattering. For the same physical volume, a structure containing larger grains results in fewer grain boundaries, and, indeed, no grain boundary exists in a single crystal conductor. Additionally, by reducing the number of grain boundaries within a conductor (or, equivalently, by increasing the size of grains for equivalent volume), reliability degradation due to electromigration is improved compared to the conventional structure.

(12) FIG. 3A-3E shows fabrication steps for implementing the first exemplary embodiment shown in FIGS. 2A & 2B. In initial step 300 shown in FIG. 3A, trenches 302, 304 have been etched in the underlying dielectric layer 306. This etching step is a conventional post patterning stage well known in BEOL technology. Depending on which chip fabrication technology is being used, the dielectric material 306 can be any of silicon oxide, nitride, carbide, or low-k dielectrics, and the layer shown in FIG. 3A could be any of the multiple interconnect layers of a typical BEOL processing. The dimensions of the trenches 302, 304 and the dielectric layer 306 are dependent upon specific technology and not critical to the present invention.

(13) FIG. 3B shows the deposition of the insulator liner 312 of the exemplary first embodiment. Any appropriate deposition mechanism can be used, including, for example, physical vapor deposition (PVD), atomic layer deposition (ALD), chemical vapor deposition (CVP), electroless deposition, or any combination of these methods. In a preferred exemplary embodiment, the insulator liner 312 will have a thickness of approximately 2 A to 500 A, preferably between approximately 5 A to 200 A. In one exemplary embodiment, the insulating liner 312 comprises Ta.sub.3N.sub.5, known to be a good insulator material. Other materials for the insulating liner 312 could be any of M(N,O), where M is any of Ta, Ti, Al, Mn, Ni, W, Hf, Mg, Cr, Ga, V, Co, Cu. Non-limiting examples include any of: TaNO, TiNO, AlNO, MnNO, NiNO, WNO, HfNO, MgNO, CrNO, GaNO, VNO, CoNO, CuNO. In another embodiment of the current application, the insulating liner 312 could be/contains SiN, SiO, SiC, Si(N,O,H,C). In yet, In another embodiment of the current application, the insulating liner 312 could be/contains any combination of the M(N,O) and SiN, SiO, SiC, Si(N,O,H,C), or any combination of these exemplary insulator materials, as well as other insulator materials. The insulator liner layer 312 of the present invention performs the same functions as those of the metallic liner layer 106 of the conventional interconnect structure 102 shown in FIG. 1A and FIG. 1B but achieves these functions as an insulator that does not present the same concerns that cause the conventional over polish shown in FIG. 1B.

(14) FIG. 3C shows the metal fill stage 320, in which a metal 322 such as Cu is deposited to form the interconnect structures and the overburden. Other possible fill metals include, for example, aluminum (Al), tungsten (W), cobalt (Co), Ruthenium (Ru), Iridium (Ir), Rhodium (Rh), or nickel (Ni), or any combination of these exemplary fill metals.

(15) FIG. 3D shows the planarization stage 330 in which the overburden has been removed down to the level of the upper surface of the insulating liner layer 312, leaving interconnect structures 332, 334. Depending upon which specific fabrication technique and metal fill material is used, the planarization processing can be done by chemical/mechanical polish (CMP), or mechanical-only polish, or chemical-only polish.

(16) The present invention is distinguished from the conventional planarization processing shown in FIG. 1B in that the process is stopped upon reaching the insulating liner 312, which is possible in the present invention because the insulating liner 312 does not present the same concerns as the metallic liner 106 used in the conventional BEOL procedure. A benefit of this technique of stopping at a level that over polishing is eliminated is that larger grains remain at the top of the resultant interconnects 332, 334.

(17) FIG. 3E shows a capping layer deposition stage 340 in which a capping layer 342 is deposited on top, in preparation for building a next BEOL level of the device, possibly another metallization layer of the BEOL processing. Non-limiting examples of possible capping layer material could be any of SiC, SiN, Si(H,C), or any combination thereof. It is noted that this capping layer is optional since, in some technologies, a subsequent metallization layer or other BEOL layer could be implemented without using a capping layer.

(18) Although the discussion above has described several different exemplary embodiments, one having ordinary skill would readily recognize that other exemplary embodiments are possible based on the description above. For example, the insulating liner 202 shown in FIGS. 2A and 2B can be a single layer, a bi-layer, or a multiple layers. In the case of bi-layer of multiple layers, the insulating liner 202 can contain both M (N,O), where M is any of Ta, Ti, Al, Mn, Ni, W, Hf, Mg, Cr, Ga, V, Co, Cu, and a common insulator like Si3N4, SiO2, SiC, SiC(N,H).

(19) In view of the explanations above, the present invention can be viewed as providing a replacement material for the conductive metallic liner 106 that was causing the over polishing of the conventional BEOL processing, since the insulator layer, M(N,O) and/or common insulators, does not need to be removed out by over polishing.

(20) The present invention provides various benefits. As mentioned, by providing interconnect structures with larger metal grains at the top, the interconnects have lower resistance and higher reliability. Another benefit is that the present invention is fully compatible with current BEOL process flow.

(21) The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.