Method of Manufacturing a Component Carrier With an Embedded Cluster and the Component Carrier

Abstract

A method of manufacturing a component carrier includes: i) forming a stack having at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, with at least one cavity formed in the stack, ii) forming a cluster by encapsulating a first electronic component and a second electronic component in a common encapsulant, and thereafter iii) placing the cluster in the common encapsulant at least partially into the cavity and v) embedding the cluster in the cavity.

Claims

1. A method of manufacturing a component carrier, the method comprising: forming a stack comprising at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, wherein at least one cavity is formed in the stack; forming a cluster by encapsulating a first electronic component and a second electronic component in a common encapsulant; thereafter placing the cluster at least partially into the cavity; and embedding the cluster in the cavity.

2. The method according to claim 1, wherein the first electronic component and the second electronic component are heterogeneous with respect to each other.

3. The method according to claim 2, wherein the first electronic component and the second electronic component have a different height.

4. The method according to claim 1, wherein a first main surface of the first electronic component and a second main surface of the second electronic component are aligned within the cluster at the same height thereby forming an aligned surface of the cluster.

5. The method according to claim 4, wherein placing further comprises: placing the cluster into the cavity such that the aligned surface faces the upper main surface of the component carrier; or placing the cluster into the cavity such that the aligned surface faces the lower main surface of the component carrier.

6. The method according to claim 1, wherein, at a main surface of the cluster, a part of the first electronic component and/or a part of the second electronic component is exposed and not covered with the encapsulant.

7. The method according to claim 1, wherein at least one of the electronic components, in particular both electronic components, comprises an electric contact, in particular a pad, at the main surface, and wherein placing includes placing the cluster into the cavity with the electric contact oriented face up or placing the cluster into the cavity with the electric contact oriented face down.

8. The method according to claim 1, wherein the common encapsulant is a molding compound, and wherein encapsulating further comprises: molding the first electronic component and the second electronic component with the common molding compound.

9. The method according to claim 1, wherein forming the cluster further comprises: providing and singularizing a wafer to obtain a plurality of electronic components, in particular reconfiguring a first die and a second die of the plurality of singularized dies to obtain the first electronic component and the second electronic component; placing the first electronic component and the second electronic component on a common substrate; encapsulating, in particular over-molding, the first electronic component and the second electronic component with the common encapsulant to obtain a cluster array; and singularizing the cluster array in order to obtain the cluster.

10. The method according to claim 1, further comprising: laminating the stack with a further electrically insulating material on a first main surface of the stack and/or on a second main surface of the stack being opposite to the first main surface.

11. The method according to claim 1, further comprising: forming an interconnection path, in particular a via, at least partially through the electrically insulating layer structure in order to electrically contact the first electronic component and/or the second electronic component.

12. A component carrier, comprising: a stack comprising at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, wherein at least one cavity is formed in the stack; and a cluster comprising a first electronic component and a second electronic component encapsulated in a common encapsulant; wherein the cluster is at least partially placed and embedded in the cavity.

13. The component carrier according to claim 12, wherein the component carrier is configured as a system-in-board.

14. The component carrier according to claim 12, wherein the cluster comprises a cluster redistribution structure encapsulated in the encapsulant.

15. The component carrier according to claim 12, wherein the stack comprises a component carrier redistribution structure, and wherein said redistribution structure is electrically connected to at least one of the first electronic component and the second electronic component of the cluster.

16. The component carrier according to claim 12, wherein a material of the encapsulant is functionalized to provide at least one additional function, in particular at least one of the group consisting of shielding of electromagnetic radiation, heat removal, mechanical reinforcement, and a flexible or semiflexible property.

17. The component carrier according to claim 12, wherein the electronic component is selected from a group consisting of an electrically non-conductive and/or electrically conductive inlay, a heat transfer unit, a light guiding element, an energy harvesting unit, a die, an active electronic component, a passive electronic component, an electronic chip, a storage device, a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter, a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, an actuator, a microelectromechanical system, a microprocessor, a capacitor, a resistor, an inductance, an accumulator, a switch, a camera, an antenna, a magnetic element, a further component carrier, and a logic chip.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0052] FIGS. 1A, 1B, 1C, 1D and 1E illustrate an exemplary embodiment of a method of manufacturing a component carrier according to the invention.

[0053] FIGS. 2A, 2B, 2C and 2D illustrate an exemplary embodiment of a method of manufacturing the cluster according to the invention.

[0054] FIGS. 3A and 3B illustrate an exemplary embodiment of two options when manufacturing a component carrier according to the invention.

[0055] FIGS. 4A, 4B, 4C and 4D illustrate an exemplary embodiment of a method of manufacturing a component carrier according to the invention.

[0056] FIGS. 5A, 5B, 5C and 5D illustrate an exemplary embodiment of a method of manufacturing the cluster with a redistribution structure according to the invention.

DETAILED DESCRIPTION OF ILLUSTRATED EMBODIMENTS

[0057] The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.

[0058] The illustrations in the drawings are schematically presented. In different drawings, similar or identical elements are provided with the same reference signs.

[0059] Before, referring to the drawings, exemplary embodiments will be described in further detail, some basic considerations will be summarized based on which exemplary embodiments of the invention have been developed.

[0060] According to an exemplary embodiment of the invention, a molded component cluster is prepared by applying overmold (encapsulant) on a carrier substrate on which electronic components are reconfigured. The molded component cluster is placed in a cavity of a panel core (e.g. a component carrier core). A dielectric layer is formed with film material lamination, e.g. by a printing method. Multiple RDLs (retribution layer) and functional patterning can be formed by laser vias, lithography, and other PCB process technologies.

[0061] According to an exemplary embodiment of the invention, the following process steps are performed: i) die singularization (of wafer), ii) component/die reconfiguration on a common carrier (e.g. metal, glass, CCL) substrate, iii) over-molding (encapsulating) the components on the substrate, iv) dicing/laser cutting of the molded component cluster, v) cluster embedding in a panel core (e.g. the core of the layer stack of a component carrier), vi) dielectric material (e.g. epoxy-based build up material (such as ABF (Ajinomoto build-up film)), PID (photo-imageable dielectric), prepreg) lamination or printing on the top side of the component carrier, vii) tape detachment from the component carrier, viii) dielectric material (e.g. epoxy-based build up material, PID, prepreg) lamination or printing on bottom side of the component carrier, ix) interconnection path preparation with laser drilling or lithography, x) metallization (e.g. plating, sputtering), and xi) build up & circuitization.

[0062] According to an exemplary embodiment of the invention, the following process steps are performed with respect to the cluster: i) providing a primer coated foil (around 5 m thickness), ii) laser drilling of fiducials in the fil and forming overlay, iii) printing of an adhesive on the foil, iv) vacuum treatment of the adhesive, v) component supply and assembly of components on the adhesive, vi) curing of the adhesive, vii) laying up and pressing prepreg layer(s) over the component(s), viii) detachment of the carrier substrate (e.g. glass or metal) and curing. There may be two ways of how to proceed further. The first option is i) etching of copper (both sides or one side; if one side only then treatment with an oxide can be performed), and then ii) cutting of cluster units. The second option is i) copper etching for SAP or half etching for MSAP processes, ii) attaching a primer resin layer at the aligned surface of the cluster, iii) laser and RDL patterning above the resin layer, and iv) detaching the common substrate/carrier and etching or anti-tarnishing on copper (SR or oxide).

[0063] FIGS. 1A to 1E illustrate an exemplary embodiment of a method of manufacturing a component carrier 100.

[0064] FIG. 1A: a first electronic component 120 and a second electronic component 130 on a common substrate 109 (such as a metal, glass, or CCL carrier) are provided. The electronic components 120, 130 can be assembled onto an adhesive (not shown) of the common substrate 109. The common substrate 109 can function as a warpage balance. Hereby, the first electronic component 120 and the second electronic component 130 are heterogeneous with respect to each other, in particular the first electronic component 120 and the second electronic component 130 have a different height.

[0065] FIG. 1B: the first electronic component 120 and the second electronic component 130 are encapsulated, in particular molded, in a common encapsulant 150, in particular a common mold. The common mold can for example be an electrically insulating material such as prepreg.

[0066] FIG. 1C: the common substrate 109 is removed (detached) and the cluster 110 is thereby provided. Hereby, a first main surface 121 of the first electronic component 120 and a second main surface 131 of the second electronic component 130 are aligned within the cluster 110 at the same height, thereby forming an aligned surface 140 on the cluster 110.

[0067] FIG. 1D: a (layer) stack 101 is formed comprising at least one electrically conductive layer structure 102 and/or at least one electrically insulating layer structure 104, wherein a cavity 106 is formed in the stack 101.

[0068] FIG. 1E: after performing the steps described above, the cluster 110 is placed into the cavity 106 of the (layer) stack 101 and the cluster 110 is then embedded with an embedding material 105, for example with an electrically insulating material, in the cavity 106. In the example shown, the cluster 110 is placed into the cavity 106 such that the aligned surface 140 faces the lower main surface 100b of the component carrier 100 being opposite to the upper main surface 100a. Optionally, the surface of the cluster 110 can also be covered with the embedding material 105 (not shown in the example).

[0069] FIGS. 2A to 2D illustrate an exemplary embodiment of a method of manufacturing the cluster 110.

[0070] FIG. 2A: a wafer 201 is provided and singularized such that a plurality of dies 202 is obtained.

[0071] FIG. 2B: a first die and a second die of the plurality of dies 202 is reconfigured to obtain the first electronic component 120 and the second electronic component 130. The dies 202 are therefore placed onto the common substrate 109, e.g. a metal or glass carrier. Alternatively, the dies are reconfigured in the first place and the reconfigured electronic components 120, 130 are then placed onto the common substrate 109. The top view shows an array of dies 202 or electronic components 120, 130, respectively. The side view below the top view shows the first electronic component 120 and the second electronic component 130 on the common substrate 109.

[0072] FIG. 2C: the electronic components 120, 130 are then encapsulated, in particular over-molded with a common encapsulant 150. In the top view merely the encapsulant 150 can be seen, while in the side view below the top view, it can be seen that the first electronic component 120 and the second electronic component 130 are encapsulated with the common encapsulant 150 such that a cluster array 210 is obtained.

[0073] FIG. 2D: The cluster array 210 is singularized, e.g. by dicing or laser cutting, into a plurality of clusters 110. The common substrate 109 is then removed. The top view shows the singularization of the cluster array 210 and the side view below the top view shows a single cluster 110 element.

[0074] FIGS. 3A and 3B illustrate an exemplary embodiment of two options when manufacturing a component carrier 100.

[0075] The first electronic component 120 comprises a first pad 125 at the main surface 121 and the second electronic component 130 comprises a second pad 135 at the main surface 131. Hereby, at a main surface 111 of the cluster 110, a part of the first electronic component 120 and a part of the second electronic component 130 is exposed and not covered with the encapsulant 150.

[0076] FIG. 3A: the cluster 110 is placed into the cavity 106 with the pads 125, 135 oriented face up. In this arrangement, the aligned surface 140 of the cluster 110 faces the upper main surface 100a of the component carrier 100.

[0077] FIG. 3B: the cluster 110 is placed into the cavity 106 with the pads 125, 135 oriented face down. In this arrangement, the aligned surface 140 of the cluster 110 faces the lower main surface 100b of the component carrier 100.

[0078] FIGS. 4A to 4D illustrate an exemplary embodiment of a method of manufacturing a component carrier 100. The component carrier from FIG. 3b is taken as a starting point in FIG. 4A. However, the component carrier from FIG. 3A can be used in the same manner.

[0079] FIG. 4B: the stack 101 is laminated with a further electrically insulating material 160 on the upper main surface of the stack 101.

[0080] FIG. 4C: the stack 101 is laminated with a further electrically insulating material 160 on the lower main surface of the stack 101 being opposite to the upper main surface. Beforehand, electrically insulating and/or electrically conductive layers of the stack 101 located below the cluster have been removed, e.g. tape detachment.

[0081] FIG. 4D: interconnection paths 180, i.e. vias, are formed with laser drilling or lithography processes through the further electrically insulating layer structures 160 in order to electrically contact the first electronic component 120 and the second electronic component 130 of the embedded cluster 110. Pads and/or terminals at the main surfaces 100a, 100b of the component carrier 100 are thereby electrically coupled with electronic contacts (e.g. pads) 125, 135 of the electronic components. The pads and/or terminals are formed by metallization (e.g. plating, sputtering) followed and/or accompanied with known build-up and circuitization processes.

[0082] FIGS. 5A to 5D illustrate an exemplary embodiment of a method of manufacturing the cluster 110 with a redistribution structure 510.

[0083] FIG. 5A: the cluster 110 is provided with the electronic components 120, 130 encapsulated in a common encapsulant 150. The main surfaces 121, 131 of the electronic components 120, 130 with the electronic contacts had been glued with an adhesive 170 to the common substrate 109, which has already been removed at this stage. An additional carrier structure 508 has been attached to the cluster 110 as a warpage balance.

[0084] FIG. 5B: the cluster 100 is turned upside-down and a primer resin layer 509 is attached to the upper main surface of the cluster 110, where the pads 125, 135 of the electronic components 120, 130 are exposed.

[0085] FIG. 5C: additional layer structures are attached to the cluster 110 and holes are drilled through these layer structures using a laser. The holes can be at least partially filled with electrically conductive material for obtaining via connections. Thereby, the electric contacts of the electronic components 120, 130 can be electrically contacted.

[0086] FIG. 5D: the additional carrier structure 508 is detached and a cluster 110 with a redistribution structure 510 is provided.

[0087] Implementation of the invention is not limited to the preferred embodiments shown in the figures and described above. Instead, a multiplicity of variants are possible which use the solutions shown and the principle according to the invention even in the case of fundamentally different embodiments.

[0088] It should be noted that the term comprising does not exclude other elements or steps and the use of the article a or an does not exclude a plurality. Also, elements described in association with different embodiments may be combined.

REFERENCE SIGNS

[0089] 100 Component carrier [0090] 100a Upper main surface [0091] 100b Lower main surface [0092] 101 Stack [0093] 102 Electrically conductive structure [0094] 104 Electrically insulating layer structure [0095] 105 Embedding material [0096] 106 Cavity [0097] 109 Common substrate [0098] 110 Cluster [0099] 111 Main surface of cluster [0100] 120 First electronic component [0101] 121 First main surface [0102] 125 First pad [0103] 130 Second electronic component [0104] 131 Second main surface [0105] 135 Second pad [0106] 140 Aligned surface [0107] 150 Encapsulant/molding compound [0108] 160 Further electrically insulating layer structure [0109] 170 Adhesive [0110] 180 Via [0111] 201 Wafer [0112] 202 Die [0113] 210 Cluster array [0114] 508 Additional carrier structure [0115] 509 Primer resin layer [0116] 510 Redistribution structure