MANUFACTURING METHOD OF BLACK MATRIX WITH EASY RECOGNITION OF ALIGNMENT MARK

Abstract

A manufacture method of a black matrix is provided. The COA technology is utilized to manufacture organic photoresist blocks with an increased thickness on alignment marks. Then, a black matrix thin film is set on and covers the organic photoresist blocks to tremendously increase the level differences of the positions of the alignment marks and adjacent areas. A contour recognition apparatus can accurately recognize positions of the alignment marks. The issue that the alignment marks are difficult to recognize after the black matrix thin film is coated in the BOA process can be solved.

Claims

1. A manufacture method of a black matrix, comprising the following steps: Step 1, providing a substrate, a plurality of alignment marks being provided on the substrate; Step 2, forming an organic photoresist layer on the substrate, wherein the photoresist layer comprises a plurality of organic photoresist blocks respectively located on and covering the plurality of alignment marks; Step 3, coating a black matrix thin film on the substrate and the organic photoresist layer such that portions of the black matrix are respectively located on the organic photoresist blocks of the photoresist layer, respectively, and organic photoresist blocks are interposed between the alignment marks and the portions of the black matrix, respectively; and Step 4, employing a contour recognition apparatus to recognize positions of the alignment marks based on level differences formed by the positions of the alignment marks and adjacent areas on the substrate, and after accurately positioning, patterning the black matrix thin film to form the black matrix.

2. The manufacture method of the black matrix according to claim 1, wherein the substrate comprises a thin-film transistor array substrate.

3. The manufacture method of the black matrix according to claim 1, wherein the substrate comprises a rectangular structure having four corners on which four alignment marks are respectively located.

4. The manufacture method of the black matrix according to claim 1, wherein the alignment marks and the organic photoresist blocks are cross structures and the alignment marks and the organic photoresist blocks have substantially the same size.

5. The manufacture method of the black matrix according to claim 1, wherein the organic photoresist blocks are color resist blocks.

6. The manufacture method of the black matrix according to claim 1, wherein the organic photoresist blocks have a thickness of 3 m.

7. The manufacture method of the black matrix according to claim 6, wherein the black matrix thin film has a thickness of 1 m.

8. The manufacture method of the black matrix according to claim 7, wherein the level differences of the positions of the alignment marks and adjacent areas are larger than 2 m.

9. The manufacture method of the black matrix according to claim 8, wherein the level differences of the positions of the alignment marks and the adjacent areas are 3 nm.

10. The manufacture method of the black matrix according to claim 1, wherein the contour recognition apparatus is a camera lens having difference modes or a CCD probe.

11. A manufacture method of a black matrix, comprising the following steps: Step 1, providing a substrate, a plurality of alignment marks being provided on the substrate; Step 2, forming an organic photoresist layer on the substrate, wherein the photoresist layer comprises a plurality of organic photoresist blocks respectively located on and covering the plurality of alignment marks; Step 3, coating a black matrix thin film on the substrate and the organic photoresist layer such that portions of the black matrix are respectively located on the organic photoresist blocks of the photoresist layer, respectively, and organic photoresist blocks are interposed between the alignment marks and the portions of the black matrix, respectively; and Step 4, employing a contour recognition apparatus to recognize positions of the alignment marks based on level differences formed by the positions of the alignment marks and adjacent areas on the substrate, and after accurately positioning, patterning the black matrix thin film to form the black matrix; wherein the substrate comprises a thin-film transistor array substrate; wherein the substrate comprises a rectangular structure having four corners on which four alignment marks are respectively located; wherein the alignment marks and the organic photoresist blocks are cross structures and the alignment marks and the organic photoresist blocks have substantially the same size; wherein the organic photoresist blocks are color resist blocks; and wherein the contour recognition apparatus is a camera lens having difference modes or a CCD probe.

12. The manufacture method of the black matrix according to claim 11, wherein the organic photoresist blocks have a thickness of 3 m.

13. The manufacture method of the black matrix according to claim 12, wherein the black matrix thin film has a thickness of 1 m.

14. The manufacture method of the black matrix according to claim 13, wherein the level differences of the positions of the alignment marks and adjacent areas are larger than 2 m.

15. The manufacture method of the black matrix according to claim 14, wherein the level differences of the positions of the alignment marks and the adjacent areas are 3 m.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The technical solution and the beneficial effects of the present invention are best understood from the following detailed description with reference to the accompanying figures and embodiments.

[0037] In drawings,

[0038] FIG. 1 is a diagram of a color filter after a black matrix is manufactured;

[0039] FIG. 2 is a diagram of a TFT array substrate coated a black matrix color resist system;

[0040] FIG. 3 is a sectional diagram of a circle area in FIG. 2;

[0041] FIG. 4 is a diagram of step 1 of a manufacture method of a black matrix according to the present invention;

[0042] FIG. 5 is a sectional diagram of A-A portion of FIG. 4;

[0043] FIG. 6 is a diagram of step 2 of the manufacture method of a black matrix according to the present invention;

[0044] FIG. 7 is a sectional diagram of A-A portion of FIG. 6;

[0045] FIG. 8 is a diagram of step 3 of the manufacture method of a black matrix according to the present invention;

[0046] FIG. 9 is a sectional diagram of A-A portion of FIG. 8; and

[0047] FIG. 10 is a diagram of step 4 of the manufacture method of a black matrix according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0048] For better explaining the technical solution and the effect of the present invention, the present invention will be further described in detail with the accompanying drawings and the specific embodiments.

[0049] Please refer to FIGS. 4-10. The present invention provides a manufacture method of a black matrix, comprising steps of:

[0050] Step 1, as shown in FIGS. 4-5, providing a substrate 1, a plurality of alignment marks 14 being provided on the substrate 1.

[0051] Specifically, the substrate 1 is a TFT array substrate.

[0052] Preferably, the substrate 1 is a rectangular structure, and there are four alignment marks 14 respectively located at four corners of the rectangular structure.

[0053] Preferably, the alignment marks 14 are cross structures.

[0054] Step 2, as shown in FIGS. 6-7, manufacturing an organic photoresist layer on the substrate 1, wherein the photoresist layer comprises a plurality of organic photoresist blocks 2 respectively covering the plurality of alignment marks 14.

[0055] Specifically, the organic photoresist layer comprises four organic photoresist blocks 2. The shape of the organic photoresist block 2 is the same as that of the alignment mark 14, both being cross structures. The size of the organic photoresist block 2 is basically the same as the size of the alignment mark 14.

[0056] Specifically, the organic photoresist blocks 2 are color resist blocks, such as red, green, or blue resist blocks.

[0057] Preferably, a thickness d2 of the organic photoresist blocks 2 is 3 m. The organic photoresist blocks 2 are employed to increase the level differences of the positions of the alignment marks 14 and adjacent areas on the substrate 1 to promote the recognition accuracy of the contour recognition apparatus.

[0058] The COA (color filter on array) technology is a skill to manufacture the color filter (generally formed with color resists) on the TFT array substrate. Step 2 utilizes the method of the COA technology to manufacture the organic photoresist blocks (such as color resist blocks) on the alignment mark of the TFT array substrate. Thus, the level differences of the positions of the alignment marks 14 and adjacent areas on the substrate is increased and beneficial for employing the contour recognition apparatus to recognize positions of the alignment marks 14 in the following step and promoting the recognition accuracy.

[0059] Step 3, as shown in FIGS. 8-9, coating a black matrix thin film 3 on the substrate 1 and the organic photoresist layer.

[0060] Preferably, a thickness of the black matrix thin film 3 is 1 m.

[0061] Step 4, as shown in FIG. 10, employing a contour recognition apparatus to recognize positions of the alignment marks 14 based on level differences d3 formed by the positions of the alignment marks 14 and adjacent areas on the substrate 1, and after accurately positioning, patterning the black matrix thin film 3 to form the black matrix 4.

[0062] Specifically, the level differences d3 of the positions of the alignment marks 14 and adjacent areas on the substrate 1 are 3 m.

[0063] In the TFT array substrate according to prior art, the level differences d1 of the positions of the alignment marks and adjacent areas are generally smaller than 1 m. Because the level difference is smaller, the method of contour recognition is difficult to recognize the accurate positions of the alignment marks. In the manufacture method of a black matrix according to the present application, by adding an organic photoresist block 2 on the alignment mark 14, the level difference d3 of the position of the alignment mark 14 and adjacent area on the substrate 1 is larger than 2 m after the black matrix thin film 3 is coated. Thus, the accurate recognition of the contour recognition apparatus to the position of the alignment mark 14 can be ensured; in comparison with the method of directly coating the black matrix thin film on the alignment mark according to prior art, the level differences of the positions of the alignment marks and adjacent areas are tremendously increased to promote the recognition accuracy of the contour recognition apparatus.

[0064] Specifically, the contour recognition apparatus is a camera lens having difference modes or a CCD (Charge-coupled Device) probe.

[0065] In conclusion, the present invention provides a manufacture method of a black matrix. The COA technology is utilized to manufacture the organic photoresist blocks with a larger thickness on the alignment marks. Then, the black matrix thin film covers on the organic photoresist blocks to tremendously increase the level differences of the positions of the alignment marks and adjacent areas. Thus, the contour recognition apparatus can be employed to accurately recognize positions of the alignment marks. Accordingly, the issue that the alignment marks are difficult to be recognized after the black matrix thin film is coated in the BOA process can be solved.

[0066] Above are only specific embodiments of the present invention, the scope of the present invention is not limited to this, and to any persons who are skilled in the art, change or replacement which is easily derived should be covered by the protected scope of the invention. Thus, the protected scope of the invention should go by the subject claims.