LIQUID COMPOSITION FOR CLEANING SEMICONDUCTOR DEVICE, METHOD FOR CLEANING SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Abstract

[Problem] To provide a liquid cleaning composition for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device.

[Solution] A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.

Claims

1. A liquid cleaning composition for removing a titanium nitride hard mask while suppressing corrosion of one or more types of materials selected from the group consisting of a material containing a cobalt element and a material containing a copper element, the composition comprising hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.

2. The liquid cleaning composition according to claim 1, wherein the zinc salt is one or more types selected from the group consisting of zinc sulfate and zinc nitrate.

3. The liquid cleaning composition according to claim 1, wherein the aminopolymethylene phosphoric acid is one or more types selected from the group consisting of aminotris(methylene phosphoric acid), diethylenetriamine penta(methylene phosphoric acid) and 1,2-propylenediamine tetra(methylene phosphoric acid).

4. The liquid cleaning composition according to claim 1, wherein the material containing a cobalt element is cobalt or a cobalt alloy and the material containing a copper element is copper or a copper alloy.

5. A method for cleaning a semiconductor device by removing a titanium nitride hard mask, where the semiconductor device has at least one or more types of materials selected from the group consisting of a material containing a cobalt element and a material containing a copper element as well as a titanium nitride hard mask, the method comprising: a step of bringing a liquid cleaning composition comprising hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water into contact with the semiconductor device.

6. The cleaning method according to claim 5, wherein the zinc salt is one or more types selected from the group consisting of zinc sulfate and zinc nitrate.

7. The cleaning method according to claim 5, wherein the aminopolymethylene phosphoric acid is one or more types selected from the group consisting of aminotris(methylene phosphoric acid), diethylenetriamine penta(methylene phosphoric acid) and 1,2-propylenediamine tetra(methylene phosphoric acid).

8. The cleaning method according to claim 5, wherein the material containing a cobalt element is cobalt or a cobalt alloy and the material containing a copper element is copper or a copper alloy.

9. A method for fabricating a semiconductor device that has one or more types of materials selected from the group consisting of a material containing a cobalt element and a material containing a copper element, the method comprising: a step of removing a titanium nitride hard mask while suppressing corrosion of the one or more types of materials selected from the group consisting of a material containing a cobalt element and a material containing a copper element by using a liquid cleaning composition comprising hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.

10. The fabrication method according to claim 9, wherein the zinc salt is one or more types selected from the group consisting of zinc sulfate and zinc nitrate.

11. The fabrication method according to claim 9, wherein the aminopolymethylene phosphoric acid is one or more types selected from the group consisting of aminotris(methylene phosphoric acid), diethylenetriamine penta(methylene phosphoric acid) and 1,2-propylenediamine tetra(methylene phosphoric acid).

12. The fabrication method according to claim 9, wherein the material containing a cobalt element is cobalt or a cobalt alloy and the material containing a copper element is copper or a copper alloy.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0032] FIG. 1 A cross-sectional schematic view of a semiconductor device comprising a barrier metal, metal wiring, a cap metal, a barrier dielectric film, a low-dielectric-constant interlayer dielectric film and a hard mask.

DESCRIPTION OF EMBODIMENTS

[0033] A liquid cleaning composition of the present invention (hereinafter, sometimes simply referred to as a cleaning solution) comprises hydrogen peroxide, potassium hydroxide, aminopolymethylene phosphoric acid, a zinc salt and water.

[0034] Since liquid semiconductor cleaning composition of the present invention for removing a TiN hard mask is used during the process of fabricating a semiconductor device, damage to metal wiring must be suppressed.

[0035] The concentration range of hydrogen peroxide used with the present invention is 1-30% by mass, preferably 3-25% by mass and particularly preferably 10-25% by mass. As long as the concentration is within the above-mentioned range, the TiN hard mask can effectively be removed while suppressing damage to the metal wiring.

[0036] The concentration range of potassium hydroxide used with the present invention is 0.01-1% by mass, preferably 0.05-0.7% by mass and particularly preferably 0.07-0.5% by mass. As long as the concentration is within the above-mentioned range, the TiN hard mask can effectively be removed while suppressing damage to the metal wiring.

[0037] Examples of the aminopolymethylene phosphoric acid used with present invention include aminotris(methylene phosphoric acid), ethylenediamine tetra(methylene phosphoric acid), diethylenetriamine penta(methylene phosphoric acid) and 1,2-propylenediamine tetra(methylene phosphoric acid), and particularly preferably include aminotris(methylene phosphoric acid), diethylenetriamine penta(methylene phosphoric acid) and 1,2-propylenediamine tetra(methylene phosphoric acid). These aminopolymethylene phosphoric acids may be added alone or two or more types of them may be added in combination.

[0038] The concentration range of the aminopolymethylene phosphoric acid used with the present invention is 0.0001-0.01% by mass, preferably 0.0003-0.003% by mass, and particularly preferably 0.0005-0.002% by mass. As long as the concentration is within the above-mentioned range, damage to the metal wiring can effectively be suppressed.

[0039] Examples of the zinc salt used with the present invention include sulfate, nitrate, hydrochloride, acetate and lactate of zinc, where the zinc salt is preferably zinc sulfate or zinc nitrate. These zinc salts may be added alone or two or more of them may be added in combination.

[0040] The concentration range of the zinc salt used with the present invention is 0.0001-0.1% by mass, preferably 0.0005-0.05% by mass and particularly preferably 0.005-0.03% by mass. As long as the concentration is within the above-mentioned range, damage to the metal wiring can effectively be suppressed.

[0041] If desired, the liquid cleaning composition of the present invention may be added with an additive that is conventionally used in a liquid composition for cleaning a semiconductor within a range that does not impair the purpose of the present invention. For example, a surfactant, an antifoaming agent or the like may be added as such an additive.

[0042] If desired, the liquid cleaning composition of the present invention may be added with an azole within a range that does not impair the purpose of the present invention.

[0043] Specifically, as such an azole, but without limitation, one or more types of azoles selected from 1-methylimidazole, 1-vinylimidazole, 2-phenylimidazole, 2-ethyl-4-imidazole, N-benzyl-2-methylimidazole, 2-methylbenzimidazole, pyrazole, 4-methylpyrazole, 3,5-dimethylpyrazole, 1,2,4-triazole, 1H-benzotriazole, 5-methyl-1H-benzotriazole and 1H-tetrazole are preferable and 3,5-dimethylpyrazole are particularly preferable.

[0044] The cleaning method of the present invention removes a titanium nitride hard mask from a semiconductor device that has at least a material selected from the group consisting of a material containing a cobalt element and a material containing a copper element, as well as a titanium nitride hard mask, where the method comprises a step of bringing the liquid cleaning composition of the present invention into contact with the semiconductor device. In a preferable aspect of the present invention, the cleaning method of the present invention can be used to remove the titanium nitride hard mask while suppressing corrosion of the material selected from the group consisting of a material containing a cobalt element and a material containing a copper element. Herein, the phrase suppressing corrosion of a material selected from the group consisting of a material containing a cobalt element and a material containing a copper element means that the etching rate of said material is 0.1 /min (0.01 nm/min) or less.

[0045] The method for bringing the liquid cleaning composition of the present invention into contact with the semiconductor device is not particularly limited. For example, the method employed may be a method in which the semiconductor device is immersed in the liquid cleaning composition of the present invention or a method in which the semiconductor device is brought into contact with the liquid cleaning composition by dropping, spraying or the like.

[0046] The temperature of the liquid cleaning composition of the present invention upon use is preferably in a range of 20-80 C., more preferably in a range of 25-70 C. and particularly preferably in a range of 40-60 C., which may suitably be selected according to etching conditions and a semiconductor base used.

[0047] If necessary, the cleaning method of the present invention may also employ ultrasonication in combination.

[0048] The time of use of the liquid cleaning composition of the present invention is preferably in a range of 0.3-30 minutes, more preferably in a range of 0.5-20 minutes and particularly preferably in a range of 1-10 minutes, which may suitably be selected according to etching conditions and a semiconductor base used.

[0049] Although a rinsing liquid that is used after the use of the liquid cleaning composition of the present invention may be an organic solvent such as an alcohol, it is also sufficient to simply rinse with water.

[0050] FIG. 1 is a schematic cross-sectional view of an exemplary semiconductor device having a barrier metal 1, metal wiring 2, a cap metal 3, a barrier dielectric film 4, low-dielectric-constant interlayer dielectric films 5 and a hard mask 6, which is cleaned with a liquid cleaning composition of the present invention. In this example, the barrier dielectric film 4, the low-dielectric-constant interlayer dielectric film 5 and the hard mask 6 are sequentially laminated in this order to form a predetermined pattern on a substrate having the barrier metal 1, the metal wiring 2, the cap metal 3 and the low-dielectric-constant interlayer dielectric film 5.

[0051] In general, a semiconductor device and a display element include:

[0052] a substrate material such as silicon, amorphous silicon, polysilicon or glass;

[0053] a dielectric material such as silicon oxide, silicon nitride, silicon carbide or a derivative thereof;

[0054] a barrier material such as tantalum, tantalum nitride, ruthenium or ruthenium oxide;

[0055] a wiring material such as copper, a copper alloy, cobalt or a cobalt alloy;

[0056] a compound semiconductor such as gallium-arsenic, gallium-phosphorus, indium-phosphorus, indium-gallium-arsenic or indium-aluminum-arsenic; and

[0057] an oxide semiconductor such as chrome oxide.

[0058] As the low-dielectric-constant interlayer dielectric film, OCD (trade name, manufactured by Tokyo Ohka Kogyo) of a hydroxysilsesquioxane (HSQ) series or a methylsilsesquioxane (MSQ) series, Black Diamond (trade name, manufactured by Applied Materials), Aurora (trade name, manufactured by ASM International) or Coral (trade name, manufactured by Novellus Systems) of a carbon-doped silicon oxide (SiOC) series or the like may generally be used, although the low-dielectric-constant interlayer dielectric film should not be limited thereto.

[0059] As the barrier metal, tantalum, tantalum nitride, ruthenium, manganese magnesium, cobalt, an oxide thereof or the like may generally be used, although the barrier metal should not be limited thereto.

[0060] As the barrier dielectric film, silicon nitride, silicon carbide, silicon carbonitride or the like may generally be used, although the barrier dielectric film should not be limited thereto.

[0061] As the hard mask to which the present invention can be applied, titanium, titanium nitride or the like can be used. In particular, titanium nitride is used with the present invention.

[0062] As the metal wiring to which the present invention can be applied, copper or a copper alloy, cobalt or a cobalt alloy as a cap metal formed on copper or a copper alloy, cobalt or a cobalt alloy, or the like may be used. Herein, a copper alloy refers to an alloy that contains copper at 50% or more, preferably 60% or more and more preferably 70% or more on a mass basis. A cobalt alloy refers to an alloy that contains cobalt at 50% or more, preferably 60% or more and more preferably 70% or more on a mass basis.

[0063] In one exemplary process for fabricating a semiconductor device, first, a barrier dielectric film, a low-dielectric-constant interlayer dielectric film, a hard mask and a photoresist are laminated on a substrate having a barrier metal, metal wiring, a low-dielectric-constant interlayer dielectric film, and if necessary a cap metal. Subsequently, the photoresist is subjected to selective exposure and development to form a photoresist pattern. Then, this photoresist pattern is transferred onto the hard mask by dry etching. Thereafter, the photoresist pattern is removed, and the low-dielectric-constant interlayer dielectric film and the barrier dielectric film are subjected to a dry etching treatment using the hard mask as an etching mask. Then, the hard mask is removed to obtain a semiconductor device having a desired metal wiring pattern. After forming a desired metal wiring pattern in such manner, the liquid cleaning composition of the present invention can favorably be used for removing the no longer needed hard mask.

[0064] In a preferable aspect of the present invention, the liquid cleaning composition of the present invention can be used to clean a semiconductor device so that a titanium nitride hard mask can be removed while suppressing damage to the metal wiring, thereby fabricating a high-precision high-quality semiconductor device at good yield.

EXAMPLES

[0065] Hereinafter, the present invention will be described more specifically by means of Examples and Comparative Examples. The present invention, however, should not be limited to these examples in any way.

[0066] Wafer Used

[0067] In this example, a wafer with a titanium nitride film that has a titanium nitride layer on a silicon wafer (in the table, expressed as TiN, manufactured by Advantech), a wafer with a copper film that has a copper layer on a silicon wafer (in the table, expressed as Cu, manufactured by Advantech) and a wafer with a cobalt film that has a cobalt layer on a silicon wafer (in the table, expressed as Co, manufactured by Advantech) were used.

[0068] Measurement of Thickness of Titanium Nitride Film

[0069] The thickness of the titanium nitride film of the wafer with the titanium nitride film was measured using X-ray fluorescent analyzer SEA1200VX, manufactured by SII NanoTechnology.

[0070] Measurement and Judgment of Etching Rate of Titanium Nitride

[0071] The etching rate of titanium nitride was evaluated by calculating a value, that was defined as the etching rate, by dividing the difference between the film thicknesses before and after treating the wafer with the titanium nitride film with the a cleaning solution by the treatment time. Titanium nitride etching rates of 100 /min (10 nm/min) or more were judged to be acceptable.

[0072] Measurement and Judgment of Etching Rates of Copper and Cobalt

[0073] The concentration of copper or cobalt in the cleaning solution after the treatment of the wafer with the copper or cobalt film was measured using Inductively Coupled Plasma-Optical Emission Spectrometer iCAP 6300 manufactured by Thermo Scientific. The amount of the dissolved copper or cobalt was calculated from the measured concentrations as well as the amount of the cleaning solution used, and the resultant was divided by the density to derive the volume of the dissolved copper or cobalt. The value calculated by dividing this volume of the dissolved copper or cobalt by the area of the wafer with the treated film and the treatment time was defined as the etching rate. Copper and cobalt etching rates of 0.1 /min (0.01 nm/min) or less were judged to be acceptable.

Examples 1-9

[0074] A wafer with a titanium nitride film was used to examine the removability of titanium nitride. Liquid cleaning compositions 1A-1I indicated in Table 1 were used for 3 minutes of immersion at temperatures indicated in Table 2, followed by rinsing with ultrapure water and drying by blowing nitrogen gas. The film thicknesses before and after the immersion were determined with an X-ray fluorescent analyzer to calculate the etching rates. The results are summarized in Table 2.

[0075] Next, wafers with a copper or cobalt film and the liquid cleaning compositions 1A-1I indicated in Table 1 were used to examine the anticorrosion states of copper and cobalt. After 30 minutes of immersion at temperatures indicated in Table 2, rinsing with ultrapure water and drying by blowing nitrogen gas were performed. The concentration of copper or cobalt in the cleaning solution after the immersion was determined with an inductively coupled plasma-optical emission spectrometer to calculate the etching rate. The results are summarized in Table 2.

[0076] When the liquid cleaning composition 1A of Example 1 (an aqueous solution comprising hydrogen peroxide at 15% by mass, potassium hydroxide at 0.2% by mass, 1,2-propylenediamine tetra(methylene phosphoric acid) (PDTP) at 0.002% by mass and zinc sulfate at 0.01% by mass) was used, the etching rate of titanium nitride was 210 /min (21 nm/min) which was acceptable while the etching rates of copper and cobalt were 0.1 /min (0.01 nm/min) or less which were also judged to be acceptable.

[0077] When the liquid cleaning compositions of Examples 2-9 of the present invention shown in Table 2 were applied, the etching rates of titanium nitride were 100 /min (10 nm/min) or more which were acceptable, showing that they could remove titanium nitride well. Meanwhile, the etching rates of copper and cobalt were 0.1 /min (0.01 nm/min) or less, showing that damage to copper and cobalt could be suppressed.

Comparative Examples 1-21

[0078] The etching rates of titanium nitride, copper and cobalt were calculated respectively in the same manner as Examples 1-9 except that the cleaning solutions 2A-2U indicated in Table 3 were used for immersion of wafers with titanium nitride, copper and cobalt films at the temperatures indicated in Table 4.

[0079] Although the etching rates of titanium nitride were 100 /min (10 nm/min) or more for Comparative examples 1, 3, 7, 8, 10-12 and 15-21, the etching rates of copper and cobalt exceeded 0.1 /min (0.01 nm/min). Although cleaning methods that used the cleaning solutions 2A, 2C, 2G, 2H, 2J, 2K, 2L, 2O, 2P, 2Q, 2R, 2S, 2T and 2U could remove titanium nitride well, they gave damage to copper and cobalt. Thus, they cannot be used for the purpose of the present invention.

[0080] The etching rates of titanium nitride were less than 100 /min (10 nm/min) for Comparative examples 2, 4, 5, 6, 9, 13 and 14. Since cleaning methods that used the cleaning solutions 2B, 2D, 2E, 2F, 2I, 2M and 2N could not remove titanium nitride well, they cannot be used for the purpose of the present invention.

TABLE-US-00001 TABLE 1 Hydrogen Potassium Aminopolymethylene Other component peroxide hydroxide phosphoric acid Zinc salt Concen- Water Cleaning Concentration Concentration Concentration Concentration tration Concentration solution % by mass % by mass Type % by mass Type % by mass Type % by mass % by mass 1A 15 0.2 PDTP 0.002 Zn 0.01 84.788 sulfate 1B 17 0.2 DTPP 0.0005 Zn 0.01 82.7895 sulfate 1C 25 0.25 PDTP 0.002 Zn 0.03 74.718 sulfate 1D 3 0.5 PDTP 0.002 Zn 0.005 96.493 sulfate 1E 10 0.7 DTPP 0.003 Zn 0.03 89.267 sulfate 1F 15 0.5 PDTP 0.002 Zn 0.02 84.478 nitrate 1G 15 0.5 ATP 0.002 Zn 0.05 84.448 sulfate 1H 15 0.05 PDTP 0.0003 Zn 0.0005 84.9492 sulfate 1I 15 0.2 PDTP 0.002 Zn 0.01 3,5- 0.3 84.488 sulfate dimethyl pyrazole

[0081] In the table, PDTP stands for 1,2-propylenediamine tetra(methylene phosphoric acid), DTPP stands for diethylenetriamine penta(methylene phosphoric acid), and ATP stands for aminotris(methylene phosphoric acid).

TABLE-US-00002 TABLE 2 Etching rate /min Cleaning Temperature Titanium nitride Cobalt Copper Example solution C. Value Judgment Value Judgment Value Judgment 1 1A 50 210 Acceptable <0.1 Acceptable <0.1 Acceptable 2 1B 50 230 Acceptable <0.1 Acceptable <0.1 Acceptable 3 1C 40 140 Acceptable <0.1 Acceptable <0.1 Acceptable 4 1D 60 210 Acceptable <0.1 Acceptable 0.1 Acceptable 5 1E 50 190 Acceptable 0.1 Acceptable 0.1 Acceptable 6 1F 50 250 Acceptable <0.1 Acceptable <0.1 Acceptable 7 1G 50 230 Acceptable 0.1 Acceptable <0.1 Acceptable 8 1H 50 160 Acceptable 0.1 Acceptable <0.1 Acceptable 9 1I 50 180 Acceptable 0.1 Acceptable <0.1 Acceptable

TABLE-US-00003 TABLE 3 Cleaning solution Composition of cleaning solution (concentration: % by mass) 2A Hydrogen peroxide 18%, potassium hydroxide 0.12%, PDTP 0.003%, water 81.877% 2B Hydrogen peroxide 0.35%, 2-(2-aminoethylamino)ethanol 2%, TMAH 1.5%, EDTA 1.2%, water 94.95% 2C Hydrogen peroxide 3%, potassium hydroxide 2%, sulfolane 70%, DTPP 1%, water 24% 2D Sulfuric acid 98%, water 2% 2E Hexafluorosilicic acid 2%, nitric acid 0.1%, benzotriazole 0.5%, water 97.4% 2F Hydrochloric acid 3.4%, tetrazole 0.5%, water 96.1% 2G Hydrogen peroxide 13%, HF 0.2%, sulfuric acid 1%, DGME 60%, 1-methylimidazole 0.5%, water 25.3% 2H Hydrogen peroxide 10%, TMAH 1.5%, EDTA 1.5%, tetrazole 0.6%, water 86.4% 2I Ammonium fluoride 1%, ammonium nitrate 2%, benzotriazole 0.5%, water 96.5% 2J Hydrogen peroxide 17%, potassium hydroxide 0.2%, DTPP 0.005%, 2-ethyl-4-methylimidazole 0.5%, water 82.295% 2K Hydrogen peroxide 17%, potassium hydroxide 0.2%, DTPP 0.007%, 3,5-dimethylpyrazole 0.5%, water 82.293% 2L Hydrogen peroxide 15%, potassium hydroxide 0.2%, PDTP 0.002%, water 84.798% 2M Potassium hydroxide 0.2%, PDTP 0.002%, Zn sulfate 0.01%, water 99.788% 2N Hydrogen peroxide 15%, PDTP 0.002%, Zn sulfate 0.01%, water 84.988% 2O Hydrogen peroxide 25%, potassium hydroxide 0.25%, PDTP 0.002%, water 74.748% 2P Hydrogen peroxide 3%, potassium hydroxide 0.5%, PDTP 0.002%, water 96.498% 2Q Hydrogen peroxide 10%, potassium hydroxide 0.7%, DTPP 0.003%, water 89.297% 2R Hydrogen peroxide 15%, potassium hydroxide 0.5%, PDTP 0.002%, water 84.498% 2S Hydrogen peroxide 15%, potassium hydroxide 0.5%, ATP 0.002%, water 84.498% 2T Hydrogen peroxide 15%, potassium hydroxide 0.2%, PDTP 0.002%, sulfuric acid 0.01%, water 84.788% 2U Hydrogen peroxide 15%, potassium hydroxide 0.5%, PDTP 0.002%, nitric acid 0.01%, water 84.478%

[0082] In the table, PDTP stands for 1,2-propylenediamine tetra(methylene phosphoric acid), DTPP stands for diethylenetriamine penta(methylene phosphoric acid), ATP stands for aminotris(methylene phosphoric acid), TMAH stands for tetramethyl ammonium hydroxide, EDTA stands for ethylenediamine tetraacetic acid, and DGME stands for diethylene glycol monomethyl ether.

TABLE-US-00004 TABLE 4 Etching rate /min Comparative Cleaning Temperature Titanium nitride Cobalt Copper example solution C. Value Judgment Value Judgment Value Judgment 1 2A 60 330 Acceptable 2 Failure 0.4 Failure 2 2B 50 5 Failure <0.1 Acceptable >100 Failure 3 2C 50 180 Acceptable 0.4 Failure 3 Failure 4 2D 70 <1 Failure 30 Failure 70 Failure 5 2E 25 2 Failure 2 Failure 0.9 Failure 6 2F 60 <1 Failure 9 Failure 20 Failure 7 2G 60 100 Acceptable 60 Failure >100 Failure 8 2H 60 100 Acceptable 50 Failure >100 Failure 9 2I 60 2 Failure <0.1 Acceptable <0.1 Acceptable 10 2J 50 220 Acceptable 0.9 Failure 1 Failure 11 2K 50 210 Acceptable 1 Failure 0.5 Failure 12 2L 50 210 Acceptable 0.8 Failure 0.3 Failure 13 2M 50 4 Failure 0.1 Acceptable 0.7 Failure 14 2N 50 40 Failure 30 Failure 3 Failure 15 2O 40 120 Acceptable 0.6 Failure 0.2 Failure 16 2P 60 170 Acceptable 0.3 Failure 0.4 Failure 17 2Q 60 190 Acceptable 0.4 Failure 0.2 Failure 18 2R 50 230 Acceptable 0.6 Failure 0.3 Failure 19 2S 50 220 Acceptable 0.2 Failure 0.2 Failure 20 2T 50 180 Acceptable 0.7 Failure 0.3 Failure 21 2U 50 230 Acceptable 0.6 Failure 0.3 Failure

REFERENCE SIGNS LIST

[0083] 1: Barrier metal [0084] 2: Metal wiring [0085] 3: Cap metal [0086] 4: Barrier dielectric film [0087] 5: Low-dielectric-constant interlayer dielectric film [0088] 6: Hard mask