High power insulated gate bipolar transistors

Abstract

A method of forming a transistor device include forming a drift layer of a first conductivity type, forming a well of a second conductivity type in the drift layer, forming a JFET region with first conductivity type dopant ions in the drift layer, forming a channel adjustment layer of the first conductivity type on the JFET region and the well, implanting first conductivity type dopant ions to form an emitter region of the first conductivity type extending through the channel adjustment layer and into the well, wherein the emitter region is spaced apart from the JFET region by the well, implanting second conductivity type dopant ions to form a connector region of the second conductivity type adjacent the emitter region, forming a gate oxide layer on the channel region, and forming a gate on the gate oxide layer.

Claims

1. A method of forming an insulated gate bipolar transistor (IGBT) device, comprising: forming a p-type drift layer; forming an n-type well in the p-type drift layer; epitaxially growing a p-type channel adjustment layer on the p-type drift layer and on the n-type well; implanting p-type dopant ions to form a p-type emitter region that extends through the p-type channel adjustment layer and into the n-type well, the p-type emitter region at least partially defining a channel region in the n-type well adjacent the p-type emitter region; implanting n-type dopant ions to form an n-type connector region that is adjacent the p-type emitter region and extends through the channel adjustment layer and into the n-type well; forming a gate oxide layer on the channel region; and forming a gate on the gate oxide layer.

2. The method of claim 1, further comprising annealing the p-type dopant implanted ions and the n-type dopant implanted ions.

3. The method of claim 2, further comprising: forming a graphite coating on the channel adjustment layer, wherein the annealing the implanted ions comprises annealing the channel adjustment layer and the graphite coating; and removing the graphite coating after the annealing the implanted ions.

4. The method of claim 3, further comprising crystallizing the graphite coating before the annealing the implanted ions.

5. The method of claim 3, wherein the annealing the implanted ions comprises annealing the implanted ions at a temperature greater than 1700 C.

6. The method of claim 3, wherein the annealing the implanted ions comprises annealing the implanted ions at a temperature greater than 1800 C.

7. The method of claim 1, wherein the forming the gate oxide layer comprises forming the gate oxide layer in dry O.sub.2, the method further comprising annealing the gate oxide layer in wet O.sub.2.

8. The method of claim 7, wherein the forming the gate oxide layer comprises forming the gate oxide layer in dry O.sub.2 at a temperature less than or equal to about 1200 C.

9. The method of claim 7, further comprising annealing the gate oxide layer in an inert atmosphere at a temperature less than or equal to about 1200 C. after the forming the gate oxide layer and before the annealing the gate oxide layer in the wet O.sub.2.

10. The method of claim 7, wherein the annealing the gate oxide layer in the wet O.sub.2 comprises annealing the gate oxide layer in the wet O.sub.2 at a temperature less than or equal to about 950 C.

11. The method of claim 10, wherein the annealing the gate oxide layer in the wet O.sub.2 comprises annealing the gate oxide layer in the wet O.sub.2 for at least one hour.

12. The method of claim 7, wherein the annealing the gate oxide layer in the wet O.sub.2 comprises generating pyrogenic steam in a pyrogenic chamber, supplying the pyrogenic steam to an anneal chamber, and annealing the gate oxide layer in the anneal chamber.

13. The method of claim 12, wherein the generating the pyrogenic steam comprises heating the pyrogenic chamber, supplying hydrogen and oxygen gas to the pyrogenic chamber, and combusting the hydrogen gas and the oxygen gas to form the pyrogenic steam, wherein the hydrogen gas and the oxygen gas are supplied to the pyrogenic chamber at a molecular ratio of hydrogen to oxygen of about 1.8 or more.

14. The method of claim 1, further comprising implanting p-type dopant ions into the drift layer to form a JFET region adjacent to the n-type well, and wherein the p-type emitter region is spaced apart from the JFET region and defines a channel region between the p-type emitter region and the JFET region.

15. The method of claim 1, wherein the channel adjustment layer is formed to have a thickness of about 0.1 m to about 0.5 m, and wherein the channel adjustment layer has a net acceptor concentration of about 110.sup.16 cm.sup.3 to about 510.sup.18 cm.sup.3.

16. The method of claim 1, wherein the drift layer comprises an epitaxial silicon carbide layer.

17. The method of claim 1, where the forming the p-type drift layer comprises forming the p-type drift layer on an n-type substrate.

18. The method of claim 17, wherein the substrate comprises silicon carbide.

19. The method of claim 1, wherein a distance from a bottom of the p-type emitter region to a bottom of the n-type well region is equal to or greater than about 0.45 m.

20. A method of forming an insulated gate bipolar transistor (IGBT) device, comprising: forming a drift layer of a first conductivity type; forming a well of a second conductivity type in the drift layer; forming a JFET region with first conductivity type dopant ions in the drift layer; forming a channel adjustment layer of the first conductivity type on the JFET region and the well; implanting first conductivity type dopant ions to form an emitter region of the first conductivity type that extends through the channel adjustment layer and into the well, wherein the emitter region is spaced apart from the JFET region by the well; implanting second conductivity type dopant ions to form a connector region of the second conductivity type that is adjacent the emitter region and into the well; forming a gate oxide layer on the channel region; and forming a gate on the gate oxide layer.

21. The method of claim 20, wherein the forming the JFET region comprises epitaxially growing the JFET region with additional first conductivity type dopant ions on the drift layer.

22. The method of claim 20, wherein the forming the JFET region comprises forming the JFET region with a dopant concentration of about 110.sup.16 cm.sup.3.

23. The method of claim 20, wherein the forming the JFET region comprises implanting aluminum in the drift layer adjacent the well.

24. The method of claim 20, further comprising: forming a graphite coating on the channel adjustment layer; annealing the implanted ions in the channel adjustment layer; annealing the graphite coating; and removing the graphite coating after annealing the implanted ions.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate certain embodiment(s) of the invention. In the drawings:

(2) FIG. 1 is a cross-section of a silicon carbide insulated gate bipolar transistor (IGBT) device according to some embodiments of the invention.

(3) FIGS. 2A to 2D are cross-section illustrations showing intermediate structures in the formation of an IGBT device according to some embodiments of the invention.

(4) FIG. 3 is a schematic diagram illustrating a pyrogenic chamber and an anneal chamber that may be used according to some embodiments of the invention.

(5) FIGS. 4-5 are plots of on-state I-V characteristics for an IGBT device according to some embodiments of the invention.

(6) FIG. 6 is a graph of leakage current density versus blocking voltage for an IGBT device according to some embodiments of the invention.

(7) FIG. 7 is a diagram of a clamped inductive switching test circuit topology used for testing the switching characteristics of a device according to some embodiments of the invention.

(8) FIG. 8 is a graph of an inductive switching waveform of a device according to some embodiments of the invention.

DETAILED DESCRIPTION

(9) Embodiments of the present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.

(10) It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items.

(11) The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms a, an and the are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms comprises comprising, includes and/or including when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

(12) Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

(13) It will be understood that when an element such as a layer, region or substrate is referred to as being on or extending onto another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being directly on or extending directly onto another element, there are no intervening elements present. It will also be understood that when an element is referred to as being connected or coupled to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being directly connected or directly coupled to another element, there are no intervening elements present.

(14) Relative terms such as below or above or upper or lower or horizontal or lateral or vertical may be used herein to describe a relationship of one element, layer or region to another element, layer or region as illustrated in the figures. It will be understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.

(15) Embodiments of the invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. The thickness of layers and regions in the drawings may be exaggerated for clarity. Additionally, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a discrete change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the invention.

(16) Some embodiments of the invention are described with reference to semiconductor layers and/or regions which are characterized as having a conductivity type such as n-type or p-type, which refers to the majority carrier concentration in the layer and/or region. Thus, n-type material has a majority equilibrium concentration of negatively charged electrons, while p-type material has a majority equilibrium concentration of positively charged holes. Some material may be designated with a + or (as in n+, n, p+, p, n++, n, p++, p, or the like), to indicate a relatively larger (+) or smaller () concentration of majority carriers compared to another layer or region. However, such notation does not imply the existence of a particular concentration of majority or minority carriers in a layer or region.

(17) Some embodiments of the invention provide insulated gate bipolar transistors (IGBTs) that are suitable for high power and/or high temperature applications. Some embodiments of the invention provide high voltage planar IGBTs. Although embodiments of the invention described herein include silicon carbide substrates and epitaxial layers, the principles and structures described herein may be advantageously employed in devices formed using other materials, such as silicon, germanium, gallium arsenide, and gallium nitride, and alloys thereof.

(18) The first reported planar gate 5.8 kV IGBT in SiC was built on an n-type substrate in 2005. See, Q. Zhang, C. Jonas, S. Ryu, A. Agarwal and J. Palmour Design and Fabrications of High Voltage IGBTs on 4 H-SiC, ISPSD Proceeding, 2006. The p-channel IGBT was selected due to the lack of high quality, low resistivity p-SiC substrates, which are required for n-channel IGBTs. The device exhibits a differential on-resistance (Rdiff, on) of about 570 mcm.sup.2 at a gate bias of 30 V at 25 C., and decreases to about 118 mcm.sup.2 at 200 C., respectively. The high on-resistance was primarily attributed to the low bulk carrier lifetimes, and low hole channel mobility.

(19) An IGBT structure according to some embodiments of the invention is shown in FIG. 1. A planar device structure, such as the structure of the device 10 shown in FIG. 1, may provide process simplification and/or enhanced device reliability. However, other device structures may be advantageously employed.

(20) The device 10 of FIG. 1 includes a p-type buffer layer 14 and a p drift epitaxial layer 16 on an n-type substrate 12. The substrate 12 may include an n+-type, 8 off-axis 4 H-SiC substrate. The p drift layer 16 may have a thickness of about 110 m and may be doped with p-type dopants at a doping concentration selected to provide a desired blocking voltage. For example, the p drift layer 16 may be doped with p-type dopants at a doping concentration of about 210.sup.14 cm.sup.3 to about 610.sup.14 cm.sup.3 for a 10 kV blocking capability. The p-type buffer layer 14 may have a thickness of about 1 m to about 2 m and may be doped with p-type dopants at a doping concentration of about 110.sup.17 cm.sup.3. The p-type buffer layer 14 is provided as a channel stop layer to discourage punch-through.

(21) N+ well regions 18 are formed at a surface of the p-type drift layer 16. The n+ well regions 18, which may be formed by ion implantation, may extend a distance of about 0.5 m into the drift layer 16.

(22) An epitaxial p-type channel adjustment layer 40 is on the drift layer 16. The channel adjustment layer 40 may have a thickness of about 0.1 m to about 0.5 m, and may be doped with p-type dopants to have a net acceptor concentration of about 110.sup.16 cm.sup.3 to about 510.sup.18 cm.sup.3. In particular, the epitaxial p-type channel adjustment layer 40 may have a thickness of about 0.25 m and may be doped with acceptor ions, such as aluminum ions, at a doping concentration of about 110 .sup.17 cm.sup.2 . The presence of the p-type channel adjustment layer 40 may modify the threshold voltage and/or improve the inversion channel mobility of the device 10.

(23) The device 10 further includes n+ connector regions 24 and p+ emitter regions 22 that may be formed by selective implantation of, for example, nitrogen and aluminum, respectively. The n+ connector regions 24 and p+ emitter regions 22 extend through the p-type channel adjustment layer 40 and into the n+ well regions 18. In some embodiments, a distance d between the bottom of the p+ emitter regions 22 and the bottom of the n+ well regions 18 may be about 0.45 m or more. An increased distance d may provide a lower resistance of the n+ well regions 18, which may result in improved on-state resistance of the device 10.

(24) A guard-ring based edge termination (not shown) may be provided around the device periphery. Other types of edge terminations may be used.

(25) The device 10 includes a JFET region 20 in the drift layer 16 between adjacent n+ well regions 18. The JFET region 20 may be implanted with p-type dopants to reduce the JFET resistance from the adjacent n+ well regions 18. In some embodiments, the JFET region 20 may be formed by an epitaxial growth process.

(26) The device 10 further includes a gate insulation layer 26, which may include silicon dioxide having a thickness of about 400-1000 .

(27) A gate 28 of, for example, polysilicon is formed on the gate insulation layer 26. An interlayer dielectric layer 33 is on the surface of the device 10 and electrically insulates the gate 28.

(28) N-type ohmic contacts 35 are formed to the n+ connector regions 24, and p-type ohmic contacts 37 are formed to the p+ emitter regions 22. The n-type ohmic contacts 35 may include a nickel-based conductive layer, such as Ni and/or NiSi. The p-type ohmic contact 37 may include an aluminum-based conductive layer, such as Al and/or AlSi. A metal overlayer 39 is formed on the interlayer dielectric layer 33 and electrically connects the n-type connector regions 24 and the p-type emitter regions 22 through their respective ohmic contacts 35, 37. An n-type ohmic metal collector contact 32 is formed on the substrate 12.

(29) FIGS. 2A to 2D illustrate some operations that may be performed and intermediate structures 10A to 10D that may be formed during the formation of a device 10. Referring to FIG. 2A, a p-type SiC buffer 14 and a p SiC drift layer 16 are formed by epitaxial growth on an n+-type 8 off-axis 4 H-SiC substrate 12. The p-type buffer layer 14 may have a thickness of about 1 m to about 2 m and may be doped with p-type dopants at a doping concentration of about 110.sup.17 cm.sup.3. After formation of the p-type drift layer 16, the n+ well regions 18 are formed, for example, by implantation of donor ions, such as nitrogen, into the drift layer 16. It may be desirable to implant the n+ well regions 18 as deep as possible. The depth of the n+ well regions 18 may be limited by the available implant energy.

(30) The structure may then be annealed at a temperature of about 1600 C. or more to activate the implanted ions. In particular, the structure may be annealed under standard SiC activation annealing conditions that are known in the art to activate the n-type dopants.

(31) The JFET region 20 may be formed, for example, by implantation of aluminum in the drift layer 16 between adjacent n+ well regions 18. The JFET region 20 may be implanted with p-type dopants to reduce the JFET resistance from the adjacent n+ well regions 18. In particular, the JFET implantation dose may be selected to reduce the JFET resistance while keeping implant damage at an acceptable level. In some embodiments, the JFET implantation may be performed at a dose sufficient to provide a dopant concentration of about 110.sup.16 cm.sup.3 in the JFET region 20. The JFET region may, in some embodiments, be formed by an epitaxial growth process.

(32) Referring to FIG. 2B, an epitaxial channel adjustment layer 40 is formed on the drift layer 16, for example using well-known SiC epitaxial regrowth techniques. The channel adjustment layer 40 may be doped with acceptor ions at a doping concentration of about 110.sup.17 cm.sup.3.

(33) The epitaxial channel adjustment layer 40 may modify the threshold voltage and/or improve the inversion channel mobility of the device. Furthermore, the channel adjustment layer 40 may also permit formation of shallower p-type source regions 22 relative to the n-type well regions 18. Providing deeper n-type well regions 18 by lifting the p-type emitter implants 22 to the surface of the regrown channel adjustment layer 40 may reduce or prevent latch-up in the device. The deep n+ well 18 may result in a lower N-well resistance due to the increased spacing d between the bottom of the p-type emitter region 22 and the bottom of the n+ well 18. A lower n-well resistance may increase the device latch-up current and/or provide a better on-state resistance.

(34) Referring to FIG. 2C, the n-type connector regions 24 and p-type emitter regions 22 are formed, for example, by selective implantation of donor and acceptor ions, respectively, into/through the epitaxial channel adjustment layer 40.

(35) It will be appreciated that the distance d shown in FIG. 2C is a function of the vertical extent of the n-type well regions 18 and the vertical extent of the p-type emitter regions 22. In general, it may be desirable to make the spacing d between the bottom of the p-type emitter regions 22 and the bottom of the n+ well 18 regions as large as possible. Furthermore, as described above, the p-type emitter regions 22 may be formed after formation of the p-type epitaxial channel adjustment layer 40. Thus, the thickness (depth) of the well regions 18 is determined by the maximum implant energy of the system used to manufacture the device. However, the penetration depth of the p+ emitter regions 22 into the n-type well regions 18 may be decreased by the thickness of the epitaxial channel adjustment layer 40, which may be about 0.25 .

(36) Still referring to FIG. 2C, the implanted dopants may be activated by annealing the structure at a temperature of about 1600 C. or more with a silicon over pressure and/or covered by an encapsulation layer such as a graphite film. In some embodiments, the implants may be activated by annealing at a temperature greater than about 1700 C. using a graphite encapsulation layer.

(37) A high temperature activation anneal (e.g. 1700 C. or more) may enhance the activation of the threshold adjustment ions, as well as annealing of defects in the channel region 40. However, such a high temperature anneal may damage the surface of the silicon carbide drift layer 16.

(38) Referring to FIG. 2C, in order to reduce damage that may result from a high temperature anneal, a graphite coating 50 may be formed on the surface of the structure 10C prior to formation of the gate oxide 26, gate contact 28 and emitter contact 30. That is, prior to annealing the structure 10C to activate the implanted ions, a graphite coating 50 may be applied to the top/front side of the structure 10C in order to protect the surface of the structure during the anneal. The graphite coating 50 may be applied by a conventional resist coating method and may have a thickness that is sufficient to protect the underlying SiC layers during a high temperature anneal. For example, the graphite coating 50 may have a thickness of about 1 m. The graphite coating 50 may be heated to form a crystalline coating on the channel adjustment layer 40. The implanted ions may be activated by a thermal anneal that may be performed, for example, in an inert gas at a temperature of about 1700 C. or greater. In particular the thermal anneal may be performed at a temperature of about 1850 C. in argon for 5 minutes. The graphite coating 50 may help to protect the surface of the epitaxial channel adjustment layer 40 and/or the drift layer 16 during the high temperature anneal.

(39) The graphite coating 50 may then be removed, for example, by ashing and thermal oxidation.

(40) After implant annealing, a field oxide (not shown) of, for example, silicon dioxide having a thickness of about 1 m may be deposited and patterned to expose the active region of the device.

(41) Referring to FIG. 2D, the gate insulation layer 26 may be formed by a gate oxidation process, with a final gate oxide thickness of 400-600.

(42) The gate insulation layer 26 may be grown on the exposed surface of the drift layer 16 after removal of the graphite cap layer 50. The gate insulation layer 26 may include an oxide layer grown by a dry-wet oxidation process that includes a growth of bulk oxide in dry O.sub.2 followed by an anneal of the bulk oxide in wet O.sub.2 as described, for example, in U.S. Pat. No. 5,972,801, the disclosure of which is incorporated herein by reference in its entirety. As used herein, anneal of oxide in wet O.sub.2 refers to anneal of an oxide in an ambient containing both O.sub.2 and vaporized H.sub.2O. An anneal may be performed in between the dry oxide growth and the wet oxide growth. The dry O.sub.2 oxide growth may be performed, for example, in a quartz furnace tube at a temperature of up to about 1200 C. in dry O.sub.2 for a time of at least about 2.5 hours. Dry oxide growth is performed to grow the bulk oxide layer to a desired thickness. The temperature of the dry oxide growth may affect the oxide growth rate. For example, higher process temperatures may produce higher oxide growth rates. The maximum growth temperature may be dependent on the system used. Higher temperatures may be achieved for the dry O.sub.2 growth by using, for example, a silicon carbide furnace instead of a quartz tube. However, higher temperatures may not improve the quality of the oxide.

(43) In some embodiments, the dry O.sub.2 oxide growth may be performed at a temperature of about 1175 C. in dry O.sub.2 for about 3.5 hours. The resulting oxide layer may be annealed at a temperature of up to about 1200 C. in an inert atmosphere. In particular, the resulting oxide layer may be annealed at a temperature of about 1175 C. in Ar for about 1 hour.

(44) The wet O.sub.2 oxide anneal may be performed at a temperature of about 950 C. or less for a time of at least about 1 hour. The temperature of the wet O.sub.2 anneal may be limited to discourage further thermal oxide growth at the SiC/SiO.sub.2 interface, which may introduce additional interface states. In particular, the wet O.sub.2 anneal may be performed in wet O.sub.2 at a temperature of about 950 C. for about 3 hours, The resulting gate insulation layer 26 may have a thickness of about 500 .

(45) In some embodiments, the steam used in the wet O.sub.2 anneal process may be generated using a pyrogenic process, and the resulting wet O.sub.2 anneal may be referred to as a pyrogenic oxidation. Referring to FIG. 3, in a pyrogenic oxidation, oxygen (O.sub.2) gas and hydrogen (H.sub.2) gas are flowed into a pyrogenic chamber 210, which is separate from the anneal chamber 220, and which is heated to a high temperature, such as about 800 C. The hydrogen and oxygen gas combust in the pyrogenic chamber 210 and form a mixture of steam (H.sub.2O) and oxygen (O.sub.2), which is supplied to the anneal chamber 220.

(46) In some cases, it may be desirable to adjust the flow rates of hydrogen and oxygen into the pyrogenic chamber 210 so that a molecular ratio of hydrogen to oxygen approaches, but does not exceed, a 2:1 ratio. That is, it may be desirable for the mixture supplied to the anneal chamber 220 to be as wet as possible, within reasonable safety limits. In some cases, a hydrogen/oxygen ratio of 1.8:1 or 1.9:1 may be used.

(47) Referring again to FIG. 2D, after formation of the gate insulation layer 26, a polysilicon gate 28 may be deposited and doped, for example, with boron followed by a metallization process to reduce the gate resistance. An interlayer dielectric layer 33, for example of silicon dioxide, is formed on the structure 10D and covers the gate 28 and exposed portions of the structure 10D. Via holes are opened in the interlayer dielectric layer 33, and ohmic contacts are formed to the p-type emitter regions 22 and the n-type connector regions 24. An Al-based conductive material, such as Al and/or AlSi, may be deposited as the p-type ohmic metal emitter contacts 37, and a Ni-based conductive layer such as Ni and/or Ni/Si may be deposited as the n-type ohmic metal contacts 35. All contacts may be sintered in Rapid Thermal Annealer. As shown in FIG. 1, a metal overlayer 39, such as a thick Ti/Au layer, may be deposited on the interlayer dielectric layer to electrically connect the p-type emitter regions 22 and the n-type connector regions 24. An n-type collector contact 32 is formed as a backside contact on the device 10.

(48) A planar IGBT as described above and having an active area of 0.4 mm.sup.2 was fabricated and characterized for on-state and blocking characteristics with negative potentials on the gate and collector. The on-state characteristics at room temperature of a 0.4 mm.sup.2 IGBT are shown in FIG. 4 with a maximum gate bias of about 20 V. The knee voltage is about 3 V, which indicates good ohmic contacts on the emitter and collector. The differential on-resistance is 88 mcm.sup.2 which is the lowest value for high voltage IGBTs. Setting the power dissipation for such devices at 300 W/cm.sup.2, the collector current density is approximately 50 A/cm.sup.2. At this current density level, the collector voltage drop is about 8.65 V, which corresponds to a specific on-resistance of about 173 mcm.sup.2.

(49) In the on-state, an IGBT according to embodiments of the invention may exhibit a positive temperature coefficient. FIG. 5 shows the I-V characteristics at 200 C. for the same device. The knee voltage stays relatively constant at 3 V. The differential on-resistance further reduces to about 25 mcm.sup.2 at a gate bias of 20 V. At the collector current density of 50 A/cm.sup.2, the collector voltage drop reduces to about 5.30 V, which corresponds to a specific on-resistance of about 106 mcm.sup.2. The on-resistance reduction at high temperature may indicate that carrier lifetimes in SiC materials currently used are the dominant factor relating to IGBT on-state current conduction capability. Compared to a 10 kV-class SiC DMOSFET, an IGBT according to some embodiments of the invention still exhibits a higher voltage drop at room temperature, possibly due to insufficient resistivity modulation. However, the voltage drop becomes less than the value for the DMOSFET at high temperatures.

(50) FIG. 6 shows the voltage blocking characteristics of the same device at room temperature. In particular, an IGBT device as described above was tested with the gate electrode grounded with the emitter and immersed in Fluorinert to prevent arcing in air. As shown in FIG. 6, a 9 kV blocking voltage with a leakage current density of less than about 0.1 mA/cm.sup.2 has been achieved at gate bias of 0 V. The breakdown occurs in the device termination periphery, which may indicate that there is room to approach the blocking voltage determined by the drift layer thickness with a better edge termination design.

(51) Hole mobility and MOS threshold voltage measurements for a lateral 4 H-SiC p-MOSFET fabricated in conjunction with the IGBT show that the MOSFET device has a peak channel mobility of about 6.5 cm.sup.2/V-s and a threshold voltage of about 7.5 V at room temperature. The channel mobility reaches a maximum value of about 8.2 cm.sup.2/Vs at 100 C., while the threshold voltage decreases with temperature.

(52) Switching tests were performed on IGBT devices according to embodiments of the invention. A clamped Inductive Switching Test Circuit topology as shown in FIG. 7 was used for the switching tests. The IGBT device 10 tested in the switching tests had an active area of 4 mm.sup.2 to achieve a high conduction current, but otherwise the test device had a similar design as that described above. In this test circuit, the IGBT 10 is coupled to a 1.1 mH inductive load L1 that is clamped by a freewheeling diode D1. The diode D1 includes two CREE CSD10120 SiC Schottky diodes in series with zero reverse recovery. One CSD10120 diode is rated for 1200 V and 10 A, so two in series may provide 2400 V of blocking capability. The capacitor C1 has a capacitance of 2 F and is capable of handling voltages up to 4 kV. A negative pulse from 0 to 20 V from the voltage source Vin was used to turn-on the IGBT. The supply voltage Vss is 500 V.

(53) FIG. 8 shows the switching waveforms at 25 C. with a collector voltage of 500 V. In FIG. 8, the horizontal axis measures time at 500 nsec/div, while the vertical axis measures volts at 200 V/div and current at 1 A/div. The fall time tfall is defined as the time to take the collector current to fall from 90% to 5% of its 2 A peak at turn-off. The rise time trise is the time it takes for the collector current to rise from 5% to 90% of the 2 A current peak at turn-on. The turn-on delay time is the time between the 20 gate bias being applied and the collector current rising to the 2 A peak. The turn-off delay time is the time between the removal of the gate bias and fall of the collector current towards zero.

(54) Table 1 shows the switching times for varying temperatures. The total switching time is about 350 ns at room temperature and increases to about 460 ns at 200 C. The IGBT features a fast switching capability, which can be operated at high frequency for a wide temperature range. The turn-off delay time may be the dominant portion of the total switching time, which is primarily determined by the input capacitors.

(55) TABLE-US-00001 TABLE 1 Switching Times Temp. t.sub.fall t.sub.rise t.sub.delay(on) t.sub.delay(off) t.sub.total (C.) (ns) (ns) (ns) (ns) (ns) 25 64 14 40 220 338 50 81 16 20 220 337 100 51 10 18 220 299 150 75 14 18 320 427 200 77 7 36 340 460

(56) SiC IGBTs according to some embodiments of the invention may be suitable for high power and/or high temperature applications. Some embodiments of the invention provide high voltage planar IGBTs on n-type 4 H-SiC substrates. In some embodiments, a differential on-resistance of about 88 mcm.sup.2 at a gate bias of about 20 V is achieved at 25 C., and decreases to about 24.8 mcm.sup.2 at 200 C. A device according to embodiments of the invention may exhibit a blocking voltage of about 9 kV with a leakage current density of about 0.1 mA/cm.sup.2 or less. A hole channel mobility of about 6.5 cm.sup.2/Vs is achieved at room temperature with a threshold voltage of 6.5 V, resulting in enhanced conduction capability. Inductive switching tests show that IGBTs according to some embodiments of the invention may exhibit fast switching capability at both room temperature and at elevated temperatures.

(57) IGBT devices according to some embodiments of the invention may exhibit a low on-state resistance. In particular, a high channel mobility may be achieved by using one or more of buried channel implantation/regrowth, thermal oxidation, high temperature implant activation and/or graphite encapsulation during implant activation. Some embodiments of the invention may provide an optimized cell design with a better trade-off between high channel density and low JFET resistance. Furthermore, some embodiments of the invention may provide a field stopper layer that is configured to enhance the carrier injection efficiency while maintaining a desired blocking capability. High channel mobility may be obtained through epitaxial channel regrowth and/or activation of threshold adjustment/buried channel implants using a high temperature anneal and/or graphite encapsulation. High majority carrier injection from the P-type emitter may be obtained through P-type epitaxial growth to obtain a high hole carrier concentration. Furthermore, some embodiments of the invention may provide reduced ohmic contact resistance on n-and p-type materials.

(58) In the drawings and specification, there have been disclosed typical embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.