A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-cone interface with low optical quality, while avoiding three flow regions which are inevitable in the crystal growth process by rotating crystal method, including incident flow, side flow and wake flow, and easily cause inclusion formation. The long seed crystal moves periodically in the fresh solution, four cylindrical surfaces can achieve reversible shear flow in one cycle, and any point on the cylindrical surface experiences the same hydrodynamic conditions in one movement cycle, so that the solute supply is sufficient and uniform, the growth velocity is improved, and the stability of morphology is ensured. The method facilitates rapid growth of high quality DKDP crystals and provides a better solution for the large-size, high-quality DKDP crystal growth required by the ICF laser device.

A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-cone interface with low optical quality, while avoiding three flow regions which are inevitable in the crystal growth process by rotating crystal method, including incident flow, side flow and wake flow, and easily cause inclusion formation. The long seed crystal moves periodically in the fresh solution, four cylindrical surfaces can achieve reversible shear flow in one cycle, and any point on the cylindrical surface experiences the same hydrodynamic conditions in one movement cycle, so that the solute supply is sufficient and uniform, the growth velocity is improved, and the stability of morphology is ensured. The method facilitates rapid growth of high quality DKDP crystals and provides a better solution for the large-size, high-quality DKDP crystal growth required by the ICF laser device.

Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (Å) and 500 angstroms.

Methods of preparing a mineral-coated rock micromodel can include 3D-printing a transparent porous micromodel with photo-curable polymer, seeding a thin layer of mineral nanoparticles in the network of pores inside the micromodel, and subsequently growing a mineral layer on the thin layer of mineral nanoparticles. The thin layer of mineral nanoparticles can be introduced by injecting a suspension containing the mineral nanoparticles through the microporous polymer micromodel, and the mineral layer can be grown in-situ on the thin layer of mineral nanoparticles in the network of pores by injecting an ion-rich solution configured to crystallize from solution in response to contacting the mineral nanoparticles.

A crystallization method for making high-quality molecular crystals containing complexes of diacylglycerol (DAG)-effector proteins and ligands thereof. For example, some of such crystals are of a quality sufficient for crystal-structure determination by X-ray crystallography with a spatial resolution of at least 3.0 Å or, in some cases, of about 1 Å. At least some embodiments of the crystallization method and of the molecular crystals produced thereby can beneficially be used, e.g., to provide high-resolution guides for the design and development of exogenous agonists of DAG-effector proteins of therapeutic interest.

A crystallization method for making high-quality molecular crystals containing complexes of diacylglycerol (DAG)-effector proteins and ligands thereof. For example, some of such crystals are of a quality sufficient for crystal-structure determination by X-ray crystallography with a spatial resolution of at least 3.0 Å or, in some cases, of about 1 Å. At least some embodiments of the crystallization method and of the molecular crystals produced thereby can beneficially be used, e.g., to provide high-resolution guides for the design and development of exogenous agonists of DAG-effector proteins of therapeutic interest.

The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.

The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.