An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.

A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.

A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

The invention relates to a ceramic molded article (1) that has recesses (2) and comprises at least two plates (joined parts) (3) made of a ceramic material, i.e. a lower base plate (9), an upper cover plate (8) and, optionally, one or more intermediate plates (7) which are stacked on top of each other and are joined to each other on the surfaces thereof to form the molded article (1); a joining material (paste) is placed between the plates (joined parts) (3).

The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.

A ceramic composite can include a first ceramic phase and a second ceramic phase. The first ceramic phase can include a silicon carbide. The second phase can include a boron carbide. In an embodiment, the silicon carbide in the first ceramic phase can have a grain size in a range of 0.8 to 200 microns. The first phase, the second phase, or both can further include a carbon. In another embodiment, at least one of the first ceramic phase and the second ceramic phase can have a median minimum width of at least 5 microns.

The present disclosure discloses the laminated ceramic chimp component including an element part having a ceramic main body and an internal electrode placed in the ceramic main body; an external electrode part having a first external electrode and a second external electrode, the first and second external electrodes being provided with side electrodes covering both side surfaces of the ceramic main body, respectively, upper electrodes covering portions of both sides of an upper surface of the ceramic main body, respectively, and lower electrodes covering portions of both sides of a lower surface of the ceramic main body, respectively; and a nano thin film layer formed of electric insulation material and applied to a region including the upper electrodes, the method for manufacturing the same and the atomic layer deposition apparatus for the same.

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.

A wafer mounting table includes a first electrode and a second electrode buried inside of a ceramic substrate having a wafer mounting surface so as to be parallel to the wafer mounting surface with the first electrode closer to the wafer mounting surface than the second electrode. The wafer mounting table includes a conductive section that electrically conducts the first electrode and the second electrode. The conductive section is such that a plurality of circular members comprised of plate-shaped metal meshes parallel to the wafer mounting surface are stacked between the first electrode and the second electrode.