Patent classifications
C04B2237/368
ALUMINUM/CERAMIC BONDING SUBSTRATE AND METHOD FOR PRODUCING SAME
There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.
Metal-ceramic substrate
A metal-ceramic substrate having at least one ceramic layer (2), which is provided on a first surface side (2a) with at least one first metallization (3) and on a second surface side (2b), opposite from the first surface side (2a), with a second metallization (4), wherein the first metallization (3) is formed by a film or layer of copper or a copper alloy and is connected to the first surface side (2a) of the ceramic layer (2) with the aid of a “direct copper bonding” process. The second metallization (4) is formed by a layer of aluminum or an aluminum alloy.
Apparatus and method for producing (metal plate)-(ceramic board) laminated assembly, and apparatus and method for producing power-module substrate
Provided are: an apparatus and a method for producing a (metal plate)-(ceramic board) laminated assembly, a bonding material and a metal plate during the bonding of the metal plate to the ceramic board through the bonding-material layer and an apparatus and a method for producing a power-module substrate. An apparatus for producing a (metal plate)-(ceramic board) laminated assembly by laminating a metal plate having a temporary bonding material formed thereon on a ceramic board having a bonding-material layer formed thereon, the apparatus being equipped with: a conveying device which conveys the metal plate onto the ceramic board to laminate the ceramic board and the metal plate on each other; and a heating device which is arranged in the middle of a passage of the conveyance of the metal plate by the conveying device and melts the temporary-bonding material on the metal plate.
ADAPTER ELEMENT FOR CONNECTING AN ELECTRONICS COMPONENT TO A HEAT SINK ELEMENT, SYSTEM COMPRISING AN ADAPTER ELEMENT OF THIS KIND, AND METHOD FOR PRODUCING AN ADAPTER ELEMENT OF THIS KIND
An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.
Ceramic structure for plasma processing apparatus and manufacturing method thereof
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.
BIFURACTING LAYUP FOR AIRFOIL RIB, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
An airfoil comprises a wall that defines a leading edge and a trailing edge and one or more cavities located within the wall along with a rib that separates the cavities. The rib or the wall comprises a first split ply that comprises a consolidated section and two or more split sections; wherein the split sections emanate from the consolidated section; and where the split sections define the wall and the cavities of the airfoil.
Power module substrate, power module substrate with heatsink, power module, and method for producing power module substrate
A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.
LAMINATED CERAMIC MOLDED ARTICLE HAVING RECESSES
The invention relates to a ceramic molded article (1) that has recesses (2) and comprises at least two plates (joined parts) (3) made of a ceramic material, i.e. a lower base plate (9), an upper cover plate (8) and, optionally, one or more intermediate plates (7) which are stacked on top of each other and are joined to each other on the surfaces thereof to form the molded article (1); a joining material (paste) is placed between the plates (joined parts) (3).
BONDED BODY, POWER MODULE SUBSTRATE WITH HEAT SINK, HEAT SINK, METHOD OF MANUFACTURING BONDED BODY, METHOD OF MANUFACTURING POWER MODULE SUBSTRATE WITH HEAT SINK, AND METHOD OF MANUFACTURING HEAT SINK
The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.
BONDED SUBSTRATE AND METHOD FOR MANUFACTURING BONDED SUBSTRATE
Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.