In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

The present invention relates to an electrode unit (10, 20) for an electric vacuum capacitor comprising a band-shaped capacitor plate (11, 21) with a height H, wherein the band-shaped capacitor plate (11, 21) is wound in a spiral with a maximum diameter D.sub.max and a constant distance between successive turns, wherein the band-shaped capacitor plate (11, 21) comprises a first longitudinal edge (11a, 21a) attached to a supporting part (12) and a second longitudinal edge (11b, 21b), the second longitudinal edge (11b, 21b) being free, wherein at the outer extremity of the spiral, the first longitudinal edge (11a, 21a) and the second longitudinal edge (11b, 21b) are connected by an inclined edge (11c, 21c) such that the first longitudinal edge (11a, 21a) is longer than the second longitudinal edge (11b, 21b), wherein the inclined edge (11c, 21c) forms with the longitudinal axis (B) of the band-shaped capacitor plate (11, 21) an angle ? less than or equal to an angle ?.sub.max=(45?.Math.?/180?). The invention relates also to a vacuum capacitor (30) comprising at least one electrode unit (10, 20) according to the present invention.

Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.

Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.

A feedthrough separates a body fluid side from a device side. A passageway is disposed through the feedthrough. A body fluid side leadwire extends from a first end disposed inside the passageway to a second end on the body fluid side. A device side leadwire extends from a first end disposed inside the passageway to a second end on the device side. The body fluid side leadwire is hermetically sealed to the feedthrough body and is not of the same material as the device side leadwire. A circuit board has an active via hole with a second end of the second leadwire residing therein. The circuit board has an active circuit trace that is electrically connectable to electronic circuits housed in an AIMD, and a circuit board ground metallization. An active electrical path extends from the first leadwire to the second leadwire to an MLCC chip capacitor mounted on the circuit board and to the circuit board active circuit trace, and a ground electrical path extends from the MLCC chip capacitor to the circuit board ground metallization and then to the ferrule.

A feedthrough separates a body fluid side from a device side. A passageway is disposed through the feedthrough. A body fluid side leadwire extends from a first end disposed inside the passageway to a second end on the body fluid side. A device side leadwire extends from a first end disposed inside the passageway to a second end on the device side. The body fluid side leadwire is hermetically sealed to the feedthrough body and is not of the same material as the device side leadwire. A circuit board has an active via hole with a second end of the second leadwire residing therein. The circuit board has an active circuit trace that is electrically connectable to electronic circuits housed in an AIMD, and a circuit board ground metallization. An active electrical path extends from the first leadwire to the second leadwire to an MLCC chip capacitor mounted on the circuit board and to the circuit board active circuit trace, and a ground electrical path extends from the MLCC chip capacitor to the circuit board ground metallization and then to the ferrule.

An electronic component according to an embodiment of the present disclosure includes a formed article containing a cyclic siloxane resin or a branched siloxane resin serving as a first binder, and an outer electrode on at least part of a surface of the formed article, the outer electrode containing an early transition metal and/or an alloy thereof.

A dielectric composition is a barium titanate-based dielectric composition and includes a barium titanate particle including a major axis, a minor axis disposed on the same plane as the major axis, and a vertical axis perpendicular to both the major axis and the minor axis, and a ratio of a length of the major axis to a length of the vertical axis is within a range from 1.5:1 to 30:1.

A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a semiconductor substrate; a fin extending from the semiconductor substrate; a first charged dielectric layer covering a bottom portion of the fin, the first charged dielectric layer having net fixed first-type charges; a second charged dielectric layer covering the first charged dielectric layer, the second charged dielectric layer having net fixed second-type charges, the second-type charges being opposite to the first-type charges; and a gate structure engaging a top portion of the fin.