An improved trench capacitor structure is disclosed that allows for the formation of narrower capacitors. An example capacitor structure includes a first conductive layer on the sidewalls of an opening through a thickness of a dielectric layer, a capacitor dielectric layer on the first conductive layer, a second conductive layer on the capacitor dielectric layer, and a conductive fill material on the second conductive layer. The capacitor dielectric layer laterally extends above the opening and along a top surface of the dielectric layer, and the conductive fill material fills a remaining portion of the opening.

A vacuum-capacitor-type instrument voltage transformer (1) is equipped with a main capacitor (2) and an insulating tube (3) that accommodates the main capacitor (2). A voltage dividing capacitor (4) is connected to the main capacitor (2) in series. The main capacitor (2) is equipped with a plurality of vacuum capacitors (2a) to (2c) that are connected in series. A high-voltage-side electrode (6) is provided on a high-voltage side of the insulating tube (3), and a ground-side electrode (7) is provided on its low-voltage side. The high-voltage-side electrode (6) is equipped with a high-voltage shield (8). Electrostatic capacity of the vacuum capacitor (for example, the vacuum capacitor (2a)) disposed on the high-voltage side is set to be greater than electrostatic capacity of the vacuum capacitor (for example, the vacuum capacitor (2b)) disposed on the low-voltage side.

An electronic component includes an element body of a rectangular parallelepiped shape, an external electrode, and an insulating film. The element body includes a first principal surface as a mounting surface, and a first side surface adjacent to the first principal surface. The external electrode includes a first electrode part and a second electrode part. The first electrode part is disposed on the first principal surface. The second electrode part is disposed on the first side surface and connected to the first electrode part. The insulating film continuously covers an end edge of the first electrode part and at least a part of an end edge of the second electrode part.

An electronic component includes an element body of a rectangular parallelepiped shape, an external electrode, and an insulating film. The element body includes a first principal surface as a mounting surface, and a first side surface adjacent to the first principal surface. The external electrode includes a first electrode part and a second electrode part. The first electrode part is disposed on the first principal surface. The second electrode part is disposed on the first side surface and connected to the first electrode part. The insulating film continuously covers an end edge of the first electrode part and at least a part of an end edge of the second electrode part.

An electronic component includes a multilayer capacitor including a capacitor body, and an external electrode disposed on an external surface of the capacitor body, an interposer including an interposer body, and an external terminals disposed on an external surface of the interposer body, and an encapsulation portion disposed to cover the multilayer capacitor. The external terminal includes a bonding portion disposed on a first surface of the interposer body to be electrically connected to the external electrode, a mounting portion disposed on a second surface of the interposer opposing the first surface, and a connection portion disposed on an end surface of the interposer to electrically connect the bonding portion to the mounting portion. A thickness of the encapsulation portion is within a range from 0.001 to 0.01 of a length of the electronic component.

Systems and method of electrical power generation. The system and method controls the timescale of electron dynamics and makes use of avalanche ionization, electrodynamic flows, magnetic fields, polarization, radiation emissions, shock wave front, impulse pressure, and heat transfer, created by plasma generated by exposing a fluid to an ultrashort wavelength laser pulse from a femtosecond laser, a nanosecond laser combined with a femtosecond laser, or a typical laser enhanced by a discharge barrier, and the fluid guided by a shock reflecting tube, electro-laser wave guide, plasma discharge gap or check valves that create vortexes to resist backflow, through a capacitor. The fluid and plasma being accumulated and recombined in a storage chamber in a compressed state, or recycled for cyclical power generation.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor is provided that includes three electrode plates in which the first electrode plate of the MIM capacitor is an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer. The other two electrode plates are located in a second interconnect dielectric material layer that is located above the first interconnect dielectric material layer. A first contact structure is present in the second interconnect dielectric material layer and contacts a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate. A second contact structure is also present in the second interconnect dielectric material layer and contacts a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate. Capacitor dielectric materials are located between each of the electrode plates.

A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor is provided that includes three electrode plates in which the first electrode plate of the MIM capacitor is an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer. The other two electrode plates are located in a second interconnect dielectric material layer that is located above the first interconnect dielectric material layer. A first contact structure is present in the second interconnect dielectric material layer and contacts a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate. A second contact structure is also present in the second interconnect dielectric material layer and contacts a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate. Capacitor dielectric materials are located between each of the electrode plates.