In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

A power capacitor including: a casing, a first bushing, a second bushing or an earthing stud having the same electric potential as the casing, wherein the first and second bushing extend through the casing, a dielectric liquid, and a plurality of wound capacitor elements, each wound capacitor element including: a first electrode having two first layers of electrically conducting material connected to the first bushing, the two first layers being arranged movable towards and from each other, a second electrode having two second layers of electrically conducting material connected to the second bushing or to the earthing stud, the two second layers being arranged movable towards and from each other, and a dielectric layer arranged between the first electrode and the second electrode, wherein the two first layers, the two second layers and the dielectric layer are together wound in a plurality of turns to obtain a plurality of layers of the first electrode, of the second electrode and of the dielectric layer, wherein the wound capacitor elements are arranged in a stacked manner in the casing, adjacent wound capacitor elements being in direct contact with each other, and wherein the capacitor elements are submerged in the dielectric liquid.

A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor is provided that includes three electrode plates in which the first electrode plate of the MIM capacitor is an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer. The other two electrode plates are located in a second interconnect dielectric material layer that is located above the first interconnect dielectric material layer. A first contact structure is present in the second interconnect dielectric material layer and contacts a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate. A second contact structure is also present in the second interconnect dielectric material layer and contacts a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate. Capacitor dielectric materials are located between each of the electrode plates.

A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor is provided that includes three electrode plates in which the first electrode plate of the MIM capacitor is an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer. The other two electrode plates are located in a second interconnect dielectric material layer that is located above the first interconnect dielectric material layer. A first contact structure is present in the second interconnect dielectric material layer and contacts a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate. A second contact structure is also present in the second interconnect dielectric material layer and contacts a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate. Capacitor dielectric materials are located between each of the electrode plates.

A device and its method of manufacture, the device configured for providing electrical energy storage of high specific energy density. The device contains one or more layers of high dielectric constant material, such as Barium Titanate or Hexagonal Barium Titanate, sandwiched between electrode layers made up of one or more of a variety of possible conducting materials. The device includes one or more electrically insulating layers including carbon, such as carbon formed into diamond or a diamond-like arrangement, for insulating the electrode(s) from the dielectric layer(s) to provide for very high breakdown voltages with good heat conductivity. The layers can be created by a variety of methods including laser deposition, and assembled to form a capacitor device provides the high energy density storage.

An electronic component includes a multilayer capacitor including a capacitor body, and an external electrode disposed on an external surface of the capacitor body, an interposer including an interposer body, and an external terminals disposed on an external surface of the interposer body, and an encapsulation portion disposed to cover the multilayer capacitor. The external terminal includes a bonding portion disposed on a first surface of the interposer body to be electrically connected to the external electrode, a mounting portion disposed on a second surface of the interposer opposing the first surface, and a connection portion disposed on an end surface of the interposer to electrically connect the bonding portion to the mounting portion. A thickness of the encapsulation portion is within a range from 0.001 to 0.01 of a length of the electronic component.

A multilayer ceramic electronic component includes a ceramic body including dielectric layers and first and second internal electrodes, first and second external electrode disposed on first and second external surfaces of the ceramic body to be electrically connected to the first and second internal electrodes, respectively, and an interposer including an insulating body having first and second recess regions and first and second terminal electrodes. The first and second recess regions are disposed in a central region of the insulating body in a width direction. A/B is within a range from 0.14 or more to 0.51 or less, where A is an area of each of the first and second recess regions, viewed in a cross-section in length and width directions, and B is an area of each of the first and second terminal electrodes, viewed in the cross-section in the length and width directions.

An electronic component includes a multilayer capacitor comprising a capacitor body, and an external electrode disposed on an end of the capacitor body, and an interposer comprising an interposer body, and an external terminal disposed on an end of the interposer body. The external terminal includes a connection portion disposed on a first surface of the interposer body and connected to the external electrode, a mounting portion disposed on a second surface of the interposer body opposing the first surface, and a side connection portion disposed on the first and second surfaces and a side surface of the interposer to connect the connection portion and the mounting portion. The side connection portion includes a cutting portion.

An electronic component includes a multilayer capacitor comprising a capacitor body, and an external electrode disposed on an end of the capacitor body, and an interposer comprising an interposer body, and an external terminal disposed on an end of the interposer body. The external terminal includes a connection portion disposed on a first surface of the interposer body and connected to the external electrode, a mounting portion disposed on a second surface of the interposer body opposing the first surface, and a side connection portion disposed on the first and second surfaces and a side surface of the interposer to connect the connection portion and the mounting portion. The side connection portion includes a cutting portion.