H01G4/258

CAPACITOR

A capacitor is provided. The capacitor includes a first electrode layer and a second electrode layer; and a first dielectric layer and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are disposed between the first electrode layer and the second electrode layer. The first dielectric layer includes a first dielectric powder and a first organic resin, and the second dielectric layer includes a second dielectric powder and a second organic resin. In particular, the weight ratio of the first dielectric powder to the first organic resin is greater than the weight ratio of the second dielectric powder to the second organic resin.

CAPACITOR

A capacitor is provided. The capacitor includes a first electrode layer and a second electrode layer; and a first dielectric layer and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are disposed between the first electrode layer and the second electrode layer. The first dielectric layer includes a first dielectric powder and a first organic resin, and the second dielectric layer includes a second dielectric powder and a second organic resin. In particular, the weight ratio of the first dielectric powder to the first organic resin is greater than the weight ratio of the second dielectric powder to the second organic resin.

High energy density storage device
10636573 · 2020-04-28 ·

A device and its method of manufacture, the device configured for providing electrical energy storage of high specific energy density. The device contains one or more layers of high dielectric constant material, such as Barium Titanate or Hexagonal Barium Titanate, sandwiched between electrode layers made up of one or more of a variety of possible conducting materials. The device includes one or more electrically insulating layers including carbon, such as carbon formed into diamond or a diamond-like arrangement, for insulating the electrode(s) from the dielectric layer(s) to provide for very high breakdown voltages with good heat conductivity. The layers can be created by a variety of methods including laser deposition, and assembled to form a capacitor device provides the high energy density storage.

High energy density storage device
10636573 · 2020-04-28 ·

A device and its method of manufacture, the device configured for providing electrical energy storage of high specific energy density. The device contains one or more layers of high dielectric constant material, such as Barium Titanate or Hexagonal Barium Titanate, sandwiched between electrode layers made up of one or more of a variety of possible conducting materials. The device includes one or more electrically insulating layers including carbon, such as carbon formed into diamond or a diamond-like arrangement, for insulating the electrode(s) from the dielectric layer(s) to provide for very high breakdown voltages with good heat conductivity. The layers can be created by a variety of methods including laser deposition, and assembled to form a capacitor device provides the high energy density storage.

Electronic component device, high-frequency front end circuit, and communication device
10607775 · 2020-03-31 · ·

An electronic component device includes an electronic component, a resin structure including the electronic component such that one main surface thereof is exposed, a through-electrode, and first and second wiring layers, in which the electronic component includes an element body, an inner electrode in the element body and connected to the first and second wiring layers, and an adjustment electrode provided in an adjustment region in the element body, the first wiring layer is continuously provided on the inner electrode, the adjustment region, and the resin structure, and a thermal expansion coefficient of the resin structure, a thermal expansion coefficient of the adjustment region, and a thermal expansion coefficient of the inner electrode satisfy an expression of the thermal expansion coefficient of the resin structurethe thermal expansion coefficient of the adjustment regionthe thermal expansion coefficient of the inner electrode.

Electronic component device, high-frequency front end circuit, and communication device
10607775 · 2020-03-31 · ·

An electronic component device includes an electronic component, a resin structure including the electronic component such that one main surface thereof is exposed, a through-electrode, and first and second wiring layers, in which the electronic component includes an element body, an inner electrode in the element body and connected to the first and second wiring layers, and an adjustment electrode provided in an adjustment region in the element body, the first wiring layer is continuously provided on the inner electrode, the adjustment region, and the resin structure, and a thermal expansion coefficient of the resin structure, a thermal expansion coefficient of the adjustment region, and a thermal expansion coefficient of the inner electrode satisfy an expression of the thermal expansion coefficient of the resin structurethe thermal expansion coefficient of the adjustment regionthe thermal expansion coefficient of the inner electrode.

MULTILAYER CERAMIC ELECTRONIC COMPONENT

A multilayer ceramic electronic component includes an element body and a terminal electrode. The element body includes internal electrode layers and insulation layers alternately laminated in a lamination direction. The terminal electrode is formed on an outer surface of the element body to be contacted and connected with the internal electrode layers. The terminal electrode includes an end-side electrode part and an upper-side electrode part. The end-side electrode part covers a leading end of the element body where the internal electrode layers are led. The upper-side electrode part is formed on a part of an upper surface of the element body and continues to the end-side electrode part. The terminal electrode is not substantially formed on a lower surface of the element body located on the other side of the upper surface along the lamination direction.

MULTILAYER CERAMIC ELECTRONIC COMPONENT

A multilayer ceramic electronic component includes an element body and a terminal electrode. The element body includes internal electrode layers and insulation layers alternately laminated in a lamination direction. The terminal electrode is formed on an outer surface of the element body to be contacted and connected with the internal electrode layers. The terminal electrode includes an end-side electrode part and an upper-side electrode part. The end-side electrode part covers a leading end of the element body where the internal electrode layers are led. The upper-side electrode part is formed on a part of an upper surface of the element body and continues to the end-side electrode part. The terminal electrode is not substantially formed on a lower surface of the element body located on the other side of the upper surface along the lamination direction.

CAPACITOR DEVICE

To provide a capacitor device capable of preventing thermal interference between a filter capacitor and a plurality of smoothing capacitors. A capacitor device provided in an energization circuit between a power source and a semiconductor module as a power supply device includes a filter capacitor for removing a noise included in a current supplied from a power input terminal, a plurality of smoothing capacitors for smoothing a voltage, and a capacitor case that houses the filter capacitor and the plurality of smoothing capacitors, and a first gap between the filter capacitor and a smoothing capacitor provided at a position closest to the filter capacitor among the plurality of smoothing capacitors is configured to be larger than a second gap between two smoothing capacitors adjacent to each other among the plurality of smoothing capacitors.

CAPACITOR DEVICE

To provide a capacitor device capable of preventing thermal interference between a filter capacitor and a plurality of smoothing capacitors. A capacitor device provided in an energization circuit between a power source and a semiconductor module as a power supply device includes a filter capacitor for removing a noise included in a current supplied from a power input terminal, a plurality of smoothing capacitors for smoothing a voltage, and a capacitor case that houses the filter capacitor and the plurality of smoothing capacitors, and a first gap between the filter capacitor and a smoothing capacitor provided at a position closest to the filter capacitor among the plurality of smoothing capacitors is configured to be larger than a second gap between two smoothing capacitors adjacent to each other among the plurality of smoothing capacitors.