A plasma processing apparatus is provided. The plasma processing apparatus is provided with an upper electrode, a lower electrode, and an electromagnetic wave emission port. The upper electrode is provided so as to allow discharging a processing gas into a processing container. The lower electrode is provided so as to holding a workpiece in the processing container. The electromagnetic wave emission port is provided at a height position between a height position of the upper electrode and a height position of the lower electrode, and is open toward a center of the processing container.

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.

There is provided a plasma processing device comprising: a chamber; an upper electrode; a showerhead provided below the upper electrode, which divides an internal space of the chamber into a first space between the upper electrode and the showerhead and a second space below the showerhead, and provides a plurality of introduction ports for introducing a gas into the second space and a plurality of openings penetrating the showerhead so that the first space and the second space are in communication with each other; a substrate support portion configured to support a substrate in the second space; an ion trap provided between the upper electrode and the showerhead, wherein the ion trap provides a plurality of through holes arranged not to align with the plurality of openings of the showerhead; a first gas supply portion configured to supply a gas to a region in the first space between the upper electrode and the ion trap; a second gas supply portion configured to supply the showerhead with a gas to be introduced from the plurality of introduction ports into the second space; a power source configured to produce a power for generating plasma, and connected to the upper electrode; and a switch configured to switchably connect the showerhead to one of a ground and the upper electrode.

Energy is generated from pulsed electric power sources applied to a gas medium that includes hydrogen. A sealed reactor chamber contains hydrogen. A plasma power supply, such as a DC, AC, or RF power supply, generates a plasma inside the chamber. The pulse energy generator systems use pulsed electric power for the conversion of molecular hydrogen into atomic hydrogen. An inner surface of the reactor chamber is coated with a catalyst to facilitate the reformation of molecular hydrogen from atomic hydrogen under conditions that release excess energy. The catalyst may include tungsten, nickel, titanium, platinum, palladium, and mixtures thereof. A plasma pulse controller connected to the plasma power supply turns the power supply on and off to generate plasma pulses inside the reactor chamber. A pulse time duration may range from 1 nanosecond to 1 millisecond and a dead time between pulses may range from 20 milliseconds to 0.3 seconds.