High voltage metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

High voltage metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

Disclosed is a broadband capacitor in which an electrode unit comprises a main electrode and a plurality of side electrodes so as to facilitate changing of capacitance value. The disclosed broadband capacitor is formed by alternately stacking a first electrode set, which comprises a first main electrode and a plurality of side electrodes spaced apart from the first main electrode, and a second electrode set, which comprises a second main electrode and a plurality of side electrodes spaced apart from the second main electrode.

Disclosed is a broadband capacitor in which an electrode unit comprises a main electrode and a plurality of side electrodes so as to facilitate changing of capacitance value. The disclosed broadband capacitor is formed by alternately stacking a first electrode set, which comprises a first main electrode and a plurality of side electrodes spaced apart from the first main electrode, and a second electrode set, which comprises a second main electrode and a plurality of side electrodes spaced apart from the second main electrode.

A multilayer substrate includes a stacked body, coil conductor patterns, and a connection conductor pattern. The stacked body includes insulating layers. A first coil conductor pattern is provided on the front surface of an insulating layer and has a wound shape including outer and inner end portions. A second coil conductor pattern is provided on the front surface of the insulating layer and includes an end portion. The connection conductor pattern is provided in the stacked body, and connects the coil conductor patterns. The outer end portion is connected to a terminal conductor on a back surface of the stacked body. The end portion of the second coil conductor pattern is connected to the terminal conductor on the back surface of the stacked body. The first coil conductor pattern extends parallel or substantially parallel to the second coil conductor pattern along an outer periphery of the second coil conductor pattern.

A multilayer substrate includes a stacked body, coil conductor patterns, and a connection conductor pattern. The stacked body includes insulating layers. A first coil conductor pattern is provided on the front surface of an insulating layer and has a wound shape including outer and inner end portions. A second coil conductor pattern is provided on the front surface of the insulating layer and includes an end portion. The connection conductor pattern is provided in the stacked body, and connects the coil conductor patterns. The outer end portion is connected to a terminal conductor on a back surface of the stacked body. The end portion of the second coil conductor pattern is connected to the terminal conductor on the back surface of the stacked body. The first coil conductor pattern extends parallel or substantially parallel to the second coil conductor pattern along an outer periphery of the second coil conductor pattern.

An integrated circuit (IC) includes a substrate and a first capacitor on the substrate. The first capacitor has a first width. A first dielectric layer is provided on a side of the first capacitor opposite the substrate. Further, a second capacitor is present on a side of the first dielectric layer opposite the first capacitor. The second capacitor has a second width that is smaller than the first width. The IC also has a second dielectric layer and a first metal layer. The second dielectric layer is on a side of the second capacitor opposite the first dielectric layer. The first metal layer is on a side of the second dielectric layer opposite the second capacitor.

An energy storage device and associated methods are shown. Example energy storage devices include a capacitor and an adjacent inductor circuit to provide a compensating induced voltage to the capacitor.