H01G4/06

Ground electrical path from an MLCC filter capacitor on an AIMD circuit board to the ferrule of a hermetic feedthrough

An EMI/energy dissipating filter for an active implantable medical device (AIMD) is described. The filter comprises a first gold braze hermetically sealing the insulator to a ferrule that is configured to be mounted in an opening in a housing for the AIMD. A lead wire is hermetically sealed in a passageway through the insulator by a second gold braze. A circuit board substrate is disposed adjacent the insulator. A two-terminal chip capacitor disposed adjacent to the circuit board has an active end metallization that is electrically connected to the active electrode plates and a ground end metallization that is electrically connected to the at least one ground electrode plates of the chip capacitor. There is a ground path electrically extending between the ground end metallization of the chip capacitor and the ferrule. The ground path comprises at least a first electrical connection material connected directly to the first gold braze, and at least an internal ground plate disposed within the circuit board substrate with the internal ground plate being electrically connected to both the first electrical connection material and the ground end metallization of the chip capacitor. An active path electrically extends between the active end metallization of the chip capacitor and the lead wire.

CAPACITORS, APPARATUS INCLUDING A CAPACITOR AND METHODS FOR FORMING A CAPACITOR
20210098196 · 2021-04-01 ·

Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.

CAPACITORS, APPARATUS INCLUDING A CAPACITOR AND METHODS FOR FORMING A CAPACITOR
20210098196 · 2021-04-01 ·

Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.

Dielectric materials using 2D nanosheet network interlayer

The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.

Dielectric materials using 2D nanosheet network interlayer

The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.

Capacitor

A capacitor includes: a capacitor element; an insulation coated lead wire connected to an electrode of a capacitor element; and a resin covering the capacitor element and the insulation coated lead wire in a state that one end of the insulation coated lead wire is exposed from the resin. The insulation coated lead wire includes: a stranded wire in which a plurality of conductive wires are twisted with each other; and an insulator covering the stranded wire. An exposed part of the stranded wire is connected to the electrode of the capacitor element. The exposed part is a part exposed from the insulator at another end of the insulation coated lead wire. The exposed part is entirely covered with solder.

Capacitor

A capacitor includes: a capacitor element; an insulation coated lead wire connected to an electrode of a capacitor element; and a resin covering the capacitor element and the insulation coated lead wire in a state that one end of the insulation coated lead wire is exposed from the resin. The insulation coated lead wire includes: a stranded wire in which a plurality of conductive wires are twisted with each other; and an insulator covering the stranded wire. An exposed part of the stranded wire is connected to the electrode of the capacitor element. The exposed part is a part exposed from the insulator at another end of the insulation coated lead wire. The exposed part is entirely covered with solder.

Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same

A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1
X.sub.2[A.sub.(n−1)M.sub.nO.sub.(3n+1)]  Chemical Formula 1
wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.

Metal-on-metal capacitor
11004784 · 2021-05-11 · ·

Certain aspects of the present disclosure provide a metal-on-metal (MoM) capacitor with metal layers, each layer having two different electrical conductors with orthogonally-arranged conductive arteries and orthogonally-oriented conductive fingers. One exemplary MoM capacitor generally includes a plurality of metal layers, wherein a first metal layer in the plurality of metal layers comprises a first electrical conductor providing a first node of the MoM capacitor and a second electrical conductor providing a second node of the MoM capacitor. According to aspects, the first electrical conductor comprises a first plurality of conductive fingers and the second electrical conductor comprises a second plurality of conductive fingers. Further, conductive fingers of the first plurality of conductive fingers are interdigitated with conductive fingers of the second plurality of conductive fingers. Additionally, the first electrical conductor in the first metal layer is oriented orthogonal to the second electrical conductor in the first metal layer.

Metal-on-metal capacitor
11004784 · 2021-05-11 · ·

Certain aspects of the present disclosure provide a metal-on-metal (MoM) capacitor with metal layers, each layer having two different electrical conductors with orthogonally-arranged conductive arteries and orthogonally-oriented conductive fingers. One exemplary MoM capacitor generally includes a plurality of metal layers, wherein a first metal layer in the plurality of metal layers comprises a first electrical conductor providing a first node of the MoM capacitor and a second electrical conductor providing a second node of the MoM capacitor. According to aspects, the first electrical conductor comprises a first plurality of conductive fingers and the second electrical conductor comprises a second plurality of conductive fingers. Further, conductive fingers of the first plurality of conductive fingers are interdigitated with conductive fingers of the second plurality of conductive fingers. Additionally, the first electrical conductor in the first metal layer is oriented orthogonal to the second electrical conductor in the first metal layer.