A film capacitor includes: a main body portion including dielectric films and metal films which are laminated; external electrodes; and an insulating layer disposed on a surface of the main body portion. The main body portion includes a pair of first faces, a pair of first side faces and a pair of second side faces, the first side faces and the second side faces connecting the first faces. The external electrodes are disposed on the first side faces, respectively. The metal films each include a plurality of first segments into which the metal films are divided by a plurality of first grooves extending in a first direction. The insulating layer is disposed between the main body portion and parts of the external electrodes within first regions which are regions of the first side faces that are distant from the second side faces, respectively, by a distance of P or less.

The present invention provides a capacitor including a conductive porous base material with a porous part, a dielectric layer and an upper electrode. The porous part, the dielectric layer, and the upper electrode are stacked on top of one another in this order to define a capacitance formation part. The capacitance format ion part is not present at a lateral end part of the porous part.

The present invention provides a capacitor including a conductive porous base material with a porous part, a dielectric layer and an upper electrode. The porous part, the dielectric layer, and the upper electrode are stacked on top of one another in this order to define a capacitance formation part. The capacitance format ion part is not present at a lateral end part of the porous part.

A capacitor that includes a substrate having a first main surface and a second main surface that are opposite to each other, and a plurality of trench portions on the first main surface; a dielectric film adjacent the first main surface of the substrate and extending into interiors of the plurality of trench portions; a conductor film on the dielectric film and extending into the interiors of the plurality of trench portions; and a bonding pad electrically connected to the conductor film. In a plan view from a direction normal to the first main surface of the substrate, the plurality of trench portions are arranged in second regions disposed along a second direction and not in first regions disposed along a first direction in which a bonding wire electrically connected to the bonding pad extends.

Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

The present invention provides a process for fabricating an n-cell supercapacitor stack, including a step of providing at least n+1 identical, or substantially identical, electrically inert conductive sheets having a defined perimeter, n identical, or substantially identical, ion-permeable insulating sheets having a defined perimeter, n identical, or substantially identical, first electrodes having a defined perimeter, n identical, or substantially identical, second electrodes having a defined perimeter, and at least n matching dielectric frames having an outer perimeter, which is larger than the perimeter of the conductive sheet and the perimeter of the insulating sheet; a step of assembling the supercapacitor stack, a step of disposing an additional conductive sheet on top of the nth second electrode; and a step of attaching adjacent units onto one another, such that at least one of the frames within each unit is attached to at least one of the frames within each respective unit adjacent thereto. Further provided is a sealing system for use in fabricating a supercapacitor stack, which includes matching current collectors and separators having externally extending framing structures.

Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.

A three-terminal flat-through EMI/energy dissipating filter comprises an active electrode plate through which a circuit current passes between a first terminal and a second terminal, a first shield plate on a first side of the active electrode plate, and second shield plate on a second side of the active electrode plate opposite the first shield plate. The first and second shield plates are conductively coupled to a grounded third terminal. Both the effective capacitance area or overlapping surface area of the active electrode plate and the surrounding ground shield plates and the dielectric constant of the insulating layers between the active electrode plate and the ground shield plates is raised to achieve a higher capacitance value for the three-terminal flat-through capacitor.

A three-terminal flat-through EMI/energy dissipating filter comprises an active electrode plate through which a circuit current passes between a first terminal and a second terminal, a first shield plate on a first side of the active electrode plate, and second shield plate on a second side of the active electrode plate opposite the first shield plate. The first and second shield plates are conductively coupled to a grounded third terminal. Both the effective capacitance area or overlapping surface area of the active electrode plate and the surrounding ground shield plates and the dielectric constant of the insulating layers between the active electrode plate and the ground shield plates is raised to achieve a higher capacitance value for the three-terminal flat-through capacitor.