The present document relates to multilayered dielectric composites for high-temperature applications and related methods.

Disclosed herein is a dielectric composite comprising an organic polymer that has a glass transition temperature greater than or equal to about 250° C.; and a dielectric filler present in an amount effective to impart to the dielectric composite a dielectric constant that varies by less than 5% over a temperature range of 25 ° C. to 300° C., with an applied alternating electric field having a frequency of 10.sup.4 Hz and a maximum operating electric field strength of at least 250 megavolt per meter. Disclosed herein too is a method of manufacturing the dielectric composite and articles that contain the dielectric composite.

Disclosed herein is a dielectric composite comprising an organic polymer that has a glass transition temperature greater than or equal to about 250° C.; and a dielectric filler present in an amount effective to impart to the dielectric composite a dielectric constant that varies by less than 5% over a temperature range of 25 ° C. to 300° C., with an applied alternating electric field having a frequency of 10.sup.4 Hz and a maximum operating electric field strength of at least 250 megavolt per meter. Disclosed herein too is a method of manufacturing the dielectric composite and articles that contain the dielectric composite.

A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

A multi-layered board includes: a middle conductive layer; a first dielectric layer that is disposed directly on a first surface of the middle conductive layer; a second dielectric layer that is disposed directly on a second surface of the middle conductive layer; a first outer surface conductive layer that is disposed directly on an outer side of the first dielectric layer; and a second outer surface conductive layer that is disposed directly on an outer side of the second dielectric layer. The first outer surface conductive layer serves as a first outer surface of the multi-layered board, and the second outer surface conductive layer serves as a second outer surface of the multi-layered board. The middle conductive layer is solidly formed over an entire planar direction of the multi-layered board. The first dielectric layer and the second dielectric layer each independently have a thickness variation of 15% or less.

The disclosure belongs to the field of film materials, and discloses a high-temperature resistant modified polypropylene film, and a preparation method and use thereof. The modified polypropylene film includes a polypropylene film, and an oxide layer and/or nitride layer, each of which has a thickness of 20-500 nm, on the surface of the polypropylene film. It can significantly improve the thermal stability and high-temperature withstand voltage property of the polypropylene film by depositing the oxide layer or nitride layer of appropriate thickness on the surface of the polypropylene film by an ALD technology. The modified polypropylene film has high-temperature resistance, such as resistance to at high temperature of 150° C., and very small deformation quantity at high temperature, and can withstand a high breakdown voltage at high temperature. For example, the modified polypropylene film can withstand a voltage of 580 kV/mm at 140° C. The modified polypropylene film has widespread applications in the field of electronic products with high temperature requirements, such as the field of capacitors.

A high voltage capacitor for a voltage divider is described that is configured to sense an elevated voltage for medium and high voltage electrical distribution networks. The high voltage capacitor comprises a high voltage electrode, a measurement electrode, and an dielectric material disposed between the high voltage and measurement electrodes, wherein the dielectric material consists essentially of lanthanum oxide-zirconium oxide-titanium oxide (LZT) glass filler disposed in an insulating polymer matrix such that the capacitance of the dielectric material does not vary by more than +/−0.5% in the temperature range of −20° C. to 60° C.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A sensor for determining plural parameters includes a housing that defines a chamber and a parallel plate capacitor having a first plate located inside the chamber and a second plate fixedly attached to a first external side of the housing. A dielectric multi-layer placed between the first and second plates includes a pressure sensitive layer and a humidity sensitive layer.