A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. In some embodiments, each LED structure is connected to a pixel driver and a shared P-electrode. The LED structures are bonded together through bonding layers. In some embodiments, reflection layers are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

A method for repairing a display device, the display device including a plurality of inorganic light emitting elements arranged in a matrix and an insulator arranged around the plurality of inorganic light emitting elements, the method comprising steps of: detecting a defective inorganic light emitting element as the inorganic light emitting element having a defect; removing the insulator around the defective inorganic light emitting element while the defective inorganic light emitting element remains without being removed by irradiating the insulator around the defective inorganic light emitting element with irradiation light; and removing the defective inorganic light emitting element after the insulator therearound has been removed.

A light emitting diode (LED) stack for a display including a first LED sub-unit configured to emit a first colored light, a second LED sub-unit disposed on the first LED sub-unit and configured to emit a second colored light, and a third LED sub-unit disposed on at least one of the first LED sub-unit and the second LED sub-unit and configured to emit a third colored light, in which the first LED sub-unit is configured to emit light through the second LED sub-unit and the third LED sub-unit, and the second LED sub-unit is configured to emit light through the third LED sub-unit.

A semiconductor device includes a base substrate comprising a first region and a second region, a photonics device disposed in the first region, the photonics device comprising a first doped layer disposed on the base substrate, and a second doped layer disposed on the first doped layer so that at least a portion vertically overlaps the first doped layer, the second doped layer having a first vertical thickness, and a transistor disposed in the second region, the transistor comprising a semiconductor layer disposed on the base substrate and horizontally spaced apart from the first doped layer, and a gate electrode horizontally spaced apart from the second doped layer and disposed on the semiconductor layer, disposed at the same vertical level as that of the second doped layer, and having a second vertical thickness equal to the first vertical thickness.

A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

A display substrate, a display apparatus, and a manufacturing method of the display substrate are provided. The display substrate includes: a base substrate; and a crystallization induction layer and a polysilicon layer stacked on the base substrate. The crystallization induction layer includes induction layer patterns and intervals between the induction layer patterns. The polysilicon layer includes a portion overlapping the induction layer patterns and a portion overlapping the intervals, a crystallinity of the portion of the polysilicon layer overlapping the induction layer patterns is larger than a crystallinity of the portion of the polysilicon layer overlapping the intervals.

A DIMA semiconductor structure is disclosed. The DIMA semiconductor structure includes a frontend including a semiconductor substrate, a transistor switch of a memory cell coupled to the semiconductor substrate and a computation circuit on the periphery of the frontend coupled to the semiconductor substrate. Additionally, the DIMA includes a backend that includes an RRAM component of the memory cell that is coupled to the transistor switch.

A display panel, a display device, and a manufacturing method of the display panel are disclosed. The display panel includes an array substrate and a light-emitting function layer disposed on the array substrate. The display panel includes a display area and a sensor light-receiving area adjacent to the display area. The array substrate includes a thin film transistor array disposed in the display area, the light-emitting function layer is disposed in the display area and the sensor light-receiving area, and the thin film transistor array is electrically connected to the light-emitting function layer.