The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

A device-bonded body includes: a first device where a plated bump is disposed; a second device where a bonding electrode bonded to the plated bump is disposed; and a sealing layer made of NCF or NCP, the sealing layer being disposed between the first device and the second device and including filler particles made of inorganic material; wherein a surface of the plated bump includes a first area and a second area higher than the first area; and at least a part of a side surface of an outer circumferential portion of the second area intersects with a surface of the first area.

A method of forming a semiconductor device includes forming a plurality of metal pads over a semiconductor substrate of a wafer, forming a passivation layer covering the plurality of metal pads, patterning the passivation layer to reveal the plurality of metal pads, forming a first polymer layer over the passivation layer, forming a plurality of redistribution lines extending into the first polymer layer and the passivation layer to connect to the plurality of metal pads, forming a second polymer layer over the first polymer layer, and patterning the second polymer layer to reveal the plurality of redistribution lines. The first polymer layer is further revealed through openings in remaining portions of the second polymer layer.

A semiconductor device includes a first die; a second die attached over the first die; a metal enclosure directly contacting and extending between the first die and the second die, wherein the first metal enclosure is continuous and encircles a set of one or more internal interconnects, wherein the first metal enclosure is configured to electrically connect to a first voltage level; and a second metal enclosure directly contacting and extending between the first die and the second die, wherein the second metal enclosure is continuous and encircles the first metal enclosure and is configured to electrically connect to a second voltage level; wherein the first metal enclosure and the second metal enclosure are configured to provide an enclosure capacitance encircling the set of one or more internal interconnects for shielding signals on the set of one or more internal interconnects.

A semiconductor device includes a first die; a second die attached over the first die; a metal enclosure directly contacting and extending between the first die and the second die, wherein the first metal enclosure is continuous and encircles a set of one or more internal interconnects, wherein the first metal enclosure is configured to electrically connect to a first voltage level; and a second metal enclosure directly contacting and extending between the first die and the second die, wherein the second metal enclosure is continuous and encircles the first metal enclosure and is configured to electrically connect to a second voltage level; wherein the first metal enclosure and the second metal enclosure are configured to provide an enclosure capacitance encircling the set of one or more internal interconnects for shielding signals on the set of one or more internal interconnects.

Provided are a semiconductor element bonding apparatus and a semiconductor element bonding method that do not cause a bonding material to protrude and also ensure adhesion, even when there are variations in a thickness of a semiconductor element or a workpiece and even when there are projections and depressions on surfaces. A semiconductor element bonding apparatus includes disposing means for disposing a workpiece and a semiconductor element at positions facing each other, moving means for moving the workpiece or the semiconductor element in a vertical direction, displacement measuring means for measuring displacement of the workpiece or the semiconductor element in the vertical direction, load measuring means for measuring a contact load between the workpiece and the semiconductor element with the bonding material interposed therebetween, and elastic modulus calculating means for calculating an elastic modulus from results of the measurement by the displacement measuring means and the load measuring means.

The invention concerns a process for the production of a circuit carrier (1) equipped with at least one surface-mount LED (SMD-LED), wherein the at least one SMD-LED (2) is positioned in oriented relationship to one or more reference points (3) of the circuit carrier (1) on the circuit carrier (1), wherein the position of a light-emitting region (4) of the at least one SMD-LED (2) is optically detected in the SMD-LED (2) and the at least one SMD-LED (2) is mounted to the circuit carrier (1) in dependence on the detected position of the light-emitting region (4) of the at least one SMD-LED (2), and such a circuit carrier (1).

The invention concerns a process for the production of a circuit carrier (1) equipped with at least one surface-mount LED (SMD-LED), wherein the at least one SMD-LED (2) is positioned in oriented relationship to one or more reference points (3) of the circuit carrier (1) on the circuit carrier (1), wherein the position of a light-emitting region (4) of the at least one SMD-LED (2) is optically detected in the SMD-LED (2) and the at least one SMD-LED (2) is mounted to the circuit carrier (1) in dependence on the detected position of the light-emitting region (4) of the at least one SMD-LED (2), and such a circuit carrier (1).

The present disclosure provides a method of creating a bond between a first object and a second object. For example, at least one insert may be provided at a location in a space formed between the first object and the second object. In additional, a filler material may be provided proximal to the location. An inter-diffusion layer may be formed, wherein a first portion of the inter-diffusion layer is formed by diffusion between the filler material and the at least one insert, wherein a second portion of the inter-diffusion layer is formed between the filler material and the first object, wherein a third portion of the inter-diffusion layer is formed between the filler material and the second object, wherein the first portion is coadunate with each of the second portion and third portion.