A flexible cable includes an elongated flexible substrate including first and second surfaces on opposite sides thereof, a first capacitor electrode provided on the first surface side of the flexible substrate, the first capacitor electrode extending from a first end of the flexible substrate toward a second end of the flexible substrate, a second capacitor electrode provided on the second surface side of the flexible substrate, the second capacitor electrode extending from the second end of the flexible substrate toward the first end of the flexible substrate, a first connection portion provided at an end of the first capacitor electrode located at the first end of the flexible substrate, and a second connection portion provided at an end of the second capacitor electrode located at the second end of the flexible substrate.

A flexible cable includes an elongated flexible substrate including first and second surfaces on opposite sides thereof, a first capacitor electrode provided on the first surface side of the flexible substrate, the first capacitor electrode extending from a first end of the flexible substrate toward a second end of the flexible substrate, a second capacitor electrode provided on the second surface side of the flexible substrate, the second capacitor electrode extending from the second end of the flexible substrate toward the first end of the flexible substrate, a first connection portion provided at an end of the first capacitor electrode located at the first end of the flexible substrate, and a second connection portion provided at an end of the second capacitor electrode located at the second end of the flexible substrate.

A multi-layered capacitor device is provided in which the multi-layered capacitor device includes a metal or metal-oxide ground electrode, a capacitor dielectric layer, a metal or metal-oxide top electrode, a hole blocking layer and an electron blocking layer. The hole blocking layer is located at the interface of the metal or metal-oxide ground electrode and the capacitor dielectric layer to increases the effective barrier height at the interface. The electron blocking layer is located at the interface of the metal or metal-oxide top electrode and the capacitor dielectric layer to increases the effective barrier height at the interface.

A thin film high polymer laminated capacitor includes: a laminated chip including dielectric layers, and internal electrode layers including first metal layers including a first metal vapor-deposited on the dielectric layers, and second metal layers including a second metal vapor-deposited on the first metal layers. The dielectric layers and the internal electrode layers being laminated and bonded alternately, and external electrodes formed on one end and the other end of the laminated chip. The laminated chip having a first region having the first metal layers formed on the dielectric layers, which are laminated alternately, and edge regions having the second metal layers formed on layers connected to the one end and layers connected to the other end in the first metal layers, which are laminated alternately, the first region having a capacitor function region, and the edge region having a heavy edge.

A solid state electrical energy state storage device includes multiple dielectric layers or an integral heterogeneous dielectric layer. Layers or portions of the heterogeneous layer have permittivity augmented by exposing the dielectric material to electric/magnetic fields during formation of the dielectric before complete solidification. Such exposure results in radicals and/or an ordered matrix. A dielectric for the device may contain a new xylene based polymer formed under atmospheric conditions via reaction with monatomic oxygen and provided an augmented permittivity through exposure of the polymer to a magnetic field and/or an electric field during condensation and solidification on a substrate.

A capacitor assembly and a method of assembling a capacitor assembly are provided. The capacitor assembly has at least two capacitor stacks, which have a layer structure including a top layer and a bottom layer. A support assembly supports the capacitor stacks. The capacitor stacks are stacked on top of each other in the support assembly. The support assembly has a compression member which compresses the at least two capacitor stacks in a direction substantially perpendicular to the layer structure. A pressure distribution arrangement adjusts the distribution of the pressure applied to the capacitor stacks by the compression member.

Prismatic polymer monolithic capacitor structure including multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The chemical composition of polymer dielectric and the electrode resistivity parameters are chosen to maximize the capacitor self-healing properties and energy density, and to assure the stability of the capacitance and dissipation factor over the operating temperature range. The glass transition temperature of the polymer dielectric is specifically chosen to avoid mechanical relaxation from occurring in the operating temperature range, which prevents high moisture permeation into the structure (which can lead to higher dissipation factor and electrode corrosion). The geometry and shape of the capacitor are appropriately controlled to minimize losses when the capacitor is exposed to pulse and alternating currents.

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula:

D.sub.p-(Core)- H.sub.q,

where Core is a polarizable conductive anisometric core, having conjugated π-systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at least one dopant group that enhances polarizability.

It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.

It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.