A dielectric composite material includes an electrical insulator and primary nanoparticles. The primary nanoparticles are dispersed, without forming agglomerates, within the electrical insulator. The primary nanoparticles are of one more of the following types: aluminum, aluminum oxide, or aluminum coated with a surface oxide layer, and the electrical insulator being a dissimilar material from the primary nanoparticles.

A film capacitor that includes a resin layer which has a first surface and a second surface and in which there are particles on at least one of the first surface and the second surface; and a metal layer on the first surface of the resin layer, wherein there are more particles in number on the at least one of the first surface and the second surface of the resin layer than inside the resin layer.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.

Disclosed are a high-temperature, high-performance capacitor thin film continuous production device and method. A thin film (3) to be processed is released by an unwinding roller (1), the position of the thin film to be processed is adjusted by an unwinding adjustment roller (2), such that the thin film is guaranteed to be located at the middle position of a discharge gap (12), and the thin film to be processed then passes through a plasma deposition area, the position of the processed thin film (7) is adjusted by a winding adjustment roller (4), and the processed thin film, after adjustment, is wound by a winding roller (6) after being drawn by a drawing roller (5), with the winding roller being an inflatable roller. The steady and controllable movement of the thin film in the deposition area is achieved. Large-scale continuous production, capable of matching the existing production speed of a polymer capacitor thin film, can be achieved using the device, wherein same has the advantages of flexible configuration, low environmental requirements, strong universality, a fast processing speed, low production costs and no pollution.

Provided is a vinylidene fluoride resin film that is produced using a film composition including at least a vinylidene fluoride resin and inorganic particles; and that includes a plurality of protrusions on at least one surface thereof. Among the plurality of protrusions, the number of protrusions greater than 0.10 μm in height from a flat surface at which the protrusions are not present is from 7.0 to 50 per 0.10 mm.sup.2 of the vinylidene fluoride resin film.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

Disclosed is polymer-ceramic composite material with colossal permittivity, comprising polymer matrix and ceramic powders embedded in the polymer matrix, wherein a part of the polymer matrix is exposed and adsorbed to the surface of the ceramic powders, and the polymer is electrically insulating. This invention simultaneously achieves large dielectric constant, negligible dielectric loss and high energy density in flexible composite capacitors based on metal-ion co-doped colossal permittivity materials. The host oxides used in this CP system is friendly to the environment, non-toxic and abundant. Additionally, the process developed is relatively simple, low cost and suitable for mass production-scale. Therefore, these composite capacitors have great technological potential for many applications. Compared to the conventional ceramic materials, composites of this invention are lightweight, scalable and easily fabricated into complex shapes towards miniaturization of the compact systems. The additional flexibility feature also possesses broad application prospects in modern electronic and energy storage devices.

A pressure sensitive electrically conductive composition comprises a contained quantity of magnetite particles, wherein the quantity of magnetite particles includes a distribution of particle sizes between sub-micron and tens of microns, and wherein the magnetite particles have a plurality of planar faces, adjacent planar faces connected at a vertex, the particles each having a plurality of vertices wherein the magnetite particles are irregular in shape and have a low aspect ratio.

There are provided a dielectric film which is excellent in heat resistance and is capable of improvement in breakdown field, a film capacitor and a combination type capacitor using the dielectric film, an inverter, and an electric vehicle. A film capacitor having excellent heat resistance and high breakdown field is obtained by producing a film capacitor that uses a dielectric film comprising an organic resin and a plurality of fine particles containing a metal element, an average of diameters of the fine particles falling in a range of 0.5 nm to 50 nm. Such a film capacitor and a combination type capacitor connected thereto via a bus bar are preferably used in an inverter and an electric vehicle.