A display device includes: a substrate including first and second light-blocking areas, and a pixel area; a light-blocking pattern at least partially at the first light-blocking area; a data line at the second light-blocking area; a first insulating layer on the light-blocking pattern and the data line; a semiconductor layer on the first insulating layer and overlapping the light-blocking pattern on a plane; a second insulating layer on the semiconductor layer; a color filter on the second insulating layer at least partially at the pixel area; a third insulating layer on the second insulating layer and the color filter; a gate line on the third insulating layer at the first light-blocking area; a pixel electrode at least partially at the pixel area; and a bridge electrode at least partially at the first light-blocking area. The second and third insulating layers directly contact one another over the semiconductor layer.

A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

A method of forming trenches and a via by self-aligned double patterning includes providing a dielectric layer covered by an SiOC layer, a TiN layer and a SiON layer from top to bottom. At least two mandrels are formed on the SiOC layer. Later, two spacers are formed respectively at two sidewalls of each mandrel. Subsequently, the mandrels are removed. The SiOC layer and the TiN layer are patterned by using the spacers to form numerous recesses. The spacers are then removed. A mask layer with a via pattern is formed to cover the SiOC layer. A via is formed in the dielectric layer by taking the mask layer as a mask. After that, the mask layer is removed. Finally, numerous trenches are formed in the dielectric layer by taking the SiOC layer and the TiN layer as a mask.

A substrate processing apparatus, including: a development part configured to develop a substrate on which an exposed resist film formed to form a pattern on a surface of the substrate; a heat plate configured to mount and heat the substrate on which the resist film formed on the heat plate before the development is performed; a distribution acquisition part configured to optically acquire a size distribution of a dimension of the pattern on the surface of the substrate; and a determination part configured to determine whether abnormality has occurred in a mounting state of the substrate on the heat plate, based on the size distribution of the dimension of the pattern.

Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.

A process for manufacturing a 3-dimensional memory structure includes: (a) providing one or more active layers over a planar surface of a semiconductor substrate, each active layer comprising (i) first and second semiconductor layers of a first conductivity; (ii) a dielectric layer separating the first and second semiconductor layer; and (ii) one or more sacrificial layers, at least one of sacrificial layers being adjacent the first semiconductor layer; (b) etching the active layers to create a plurality of active stacks and a first set of trenches each separating and exposing sidewalls of adjacent active stacks; (c) filling the first set of trenches by a silicon oxide; (d) patterning and etching the silicon oxide to create silicon oxide columns each abutting adjacent active stacks and to expose portions of one or more sidewalls of the active stacks; (e) removing the sacrificial layers from exposed portions of the sidewalls by isotropic etching through the exposed portions of the sidewalls of the active stacks to create corresponding cavities in the active layers; (f) filling the cavities in the active stacks by a metallic or conductor material; (g) recessing the dielectric layer from the exposed sidewalls of the active stacks; and (h) filling recesses in the dielectric layer by a third semiconductor layer of a second conductivity opposite the first conductivity.

An array substrate manufacturing method, an array substrate formed by the method, and a liquid crystal apparatus are disclosed. The method includes steps of depositing a first metal layer to form a plurality of scanning lines; depositing a first insulating layer and performing a patterning process on the first insulating layer; depositing a semiconductor layer and a second metal layer to form a plurality of data lines and thin-film transistors; depositing a second insulating layer to form a plurality of contact holes; and depositing a transparent layer to form a plurality of pixel electrodes.

A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H.sub.2). The method further includes controlling a flow rate of the hydrogen gas (H.sub.2) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.

Embodiments of this disclosure provide a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof According to the method for manufacturing a photoresist structure, a single photoresist is used, a second photoresist layer having an undercut can be obtained by only one development process using a single developing solution, and the size of the undercut can be controlled by the development time, thereby solving the problems such as difficulty in lift-off caused by adhesion of the deposited material to the sidewall of the photoresist structure in traditional lift-off processes.

A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.