A system and method for performing in-situ measurements of semiconductor devices during chemical vapor deposition (CVD) includes disposing a chip carrier within a sealed chamber of a reactor for carrying out in-situ monitoring of partially fabricated semiconductor devices. The chip carrier includes a plurality of metallized bonding pads disposed along both peripheral edges on a same surface of the base for making electrical connections to metallized pads or contacts on the semiconductor device through bonding wires. Each of the plurality of metallized bonding pads disposed along both peripheral edges is electrically connected to each other as a pair through electrically connecting to a corresponding pair of ports which are disposed along both peripheral edges of the chip carrier. In-situ monitoring of the partially fabricated semiconductor device is performed through connecting the plurality of ports on the chip carrier to an external source-measure unit through a connector and wire harness.

A substrate processing method includes performing a post-processing on a substrate subjected to a pre-processing, in the multiple chambers, acquiring a characteristic value of the substrate after the post-processing for respective chambers, calculating an actual value being an estimated value of the characteristic value when a processing condition of the post-processing is adjusted such that a difference between the characteristic value and a target value becomes small, acquiring a correction residual amount being a difference between the actual value and the target value for each chamber, calculating an average value of correction residual amounts of all of the chambers, correcting the pre-processing condition based on the average of the correction residual amounts, correcting the post-processing condition for each chamber based on the average of the correction residual amounts and the correction residual amount for each chamber; and performing the pre-processing and the post-processing based on the corrected conditions.

A chamber in which heating treatment is performed by irradiating a semiconductor wafer with light and a combustible gas supply source are connected in communication with each other by a combustible gas supply pipe. An electrical flow rate controller for regulating a supply flow rate of a combustible gas, and the like are interposed in the combustible gas supply pipe. Part of the combustible gas supply pipe which includes the electrical flow rate controller and the like that can be an ignition source is surrounded by an inner enclosure. Nitrogen which is a noncombustible gas is supplied to an inner space inside the inner enclosure. The noncombustible gas is supplied to the inner space, and a gas remaining in the inner space is discharged, whereby the concentration of oxygen in the inner space is decreased to below an explosion limit. This prevents fires and explosions of the combustible gas.

In some embodiments, the present disclosure relates a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a workpiece holder apparatus that is configured to hold a workpiece. A sonar sensor is arranged over the workpiece holder apparatus. The sonar sensor includes an emitter that is configured to produce sound waves traveling towards the workpiece holder apparatus. The sonar sensor also includes a detector that is configured to receive reflected sound waves from the workpiece holder apparatus or an object between the sonar sensor and the workpiece holder apparatus. Further, sonar sensor control circuitry is coupled to the sonar sensor and is configured to determine if a workpiece is present on the workpiece holder apparatus based on a sonar intensity value of the reflected sound waves received by the detector of the sonar sensor.

A treatment apparatus including a chuck table, a table base, a servo motor that rotates the table base, and a determination unit that determines the kind of the chuck table mounted to the table base is provided. The determination unit includes a torque recording section in which a torque outputted by the servo motor when rotating the table base is recorded on the basis of the kind of the chuck table, and a determination section that collates the torque outputted by the servo motor with the torque recording section, to thereby determine the kind of the chuck table.

One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.

Provided is a technique of processing a substrate by executing a process recipe including a plurality of steps, the technique including: (a) acquiring vibration data of a member that exhausts an atmosphere in a process chamber that processes the substrate from a vibration sensor while executing the process recipe; and (b) detecting presence of an abnormality sign in a case where a ratio between a magnitude of vibration at a rotation frequency of the member and a magnitude of vibration at a comparison frequency that is an integral multiple of the rotation frequency exceeds a preset abnormality sign threshold on the basis of the acquired vibration data.

A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

A method for manufacturing a semiconductor structure and the semiconductor structure are provided. In the method, a first wafer is provided, in which the first wafer has a first side and a second side opposite to each other, and a first conductive structure is provided in the first wafer, and an end of the first conductive structure is located in the first wafer. The first wafer is thinned from the second side along a direction perpendicular to the first side, until a thickness of the remaining first wafer reaches a preset thickness to expose the end of the first conductive structure. The thinning includes performing film peeling at least once. In the film peeling, hydrogen ion implantation is performed on the second side to form a hydrogen ion-containing layer in the first wafer; and the first wafer is heated to cause the hydrogen ion-containing layer to fall off.