An ultrasonic/megasonic cleaning device includes a cleaning unit including an upper casing and a lower casing connected to form a hollow chamber, an ultrasonic/megasonic generator provided in the hollow chamber, and a bottom quartz component provided with a quartz rod array composed of a plurality of vertically arranged quartz rod-like structures; a spray arm connected to the upper casing; and an ultrasonic/megasonic frequency control unit connected between the at least one signal source and the ultrasonic/megasonic generator, for constantly varying a frequency of the electrical signal output from the at least one signal source and introducing the electrical signal into the ultrasonic/megasonic generator, so as to dynamically vary an oscillation frequency of the ultrasonic/megasonic wave generated by the ultrasonic/megasonic generator; wherein the ultrasonic/megasonic frequency control unit includes a frequency-switching timing control unit configured to trigger am ultrasonic/megasonic frequency switching control unit to switch the oscillation frequency of the ultrasonic/megasonic wave from a first frequency to a second frequency when the ultrasonic/megasonic wave has been generated at the first frequency for a time period, the time period being randomly selected within a time range.

A pressure control device 20 includes a pressure control valve 25, a flow resistance 23 provided downstream of the pressure control valve, for restricting a gas flow, a first pressure sensor 21 for measuring a gas pressure between the pressure control valve and the flow resistance, a second pressure sensor 22 for measuring a gas pressure downstream of the flow resistance, and an arithmetic control circuit 26 connected to the first pressure sensor and the second pressure sensor. The pressure control device is configured to control the gas pressure downstream of the flow resistance by adjusting an opening degree of the pressure control valve based on an output of the second pressure sensor regardless of an output of the first pressure sensor control, and calculate the flow rate of the gas downstream of the flow resistance based on the output of the first pressure sensor and the output of the second pressure sensor.

A substrate processing device includes a processing tank, a substrate holding unit, a fluid supply unit, and a control unit. The processing tank stores a processing liquid for processing a substrate. The substrate holding unit holds the substrate in the processing liquid in the processing tank. The fluid supply unit supplies a fluid to the processing tank. The control unit controls the fluid supply unit. The control unit controls the fluid supply unit such that the fluid supply unit changes supply of the fluid during a period from a start of supply of the fluid to the processing tank storing the processing liquid in which the substrate is immersed to an end of supply of the fluid to the processing tank storing the processing liquid in which the substrate is immersed.

An apparatus for automatically cleaning a nozzle of a gas supply system is provided. The apparatus includes a carrier with a gas inlet that is adapted to sealingly mate with the nozzle of the gas supply system and an automated nozzle cleaning system in the carrier. The automated nozzle cleaning system includes a first nozzle cleaning device, a second nozzle cleaning device, and a function switching plate. The function switching plate comprises a plurality of through holes, a first through hole of the plurality of through holes is configured to engage the first nozzle cleaning device with the gas inlet when the function switching plate is positioned at a first position, and a second through hole of the plurality of through holes is configured to engage the second nozzle cleaning device with the gas inlet when the function switching plate is positioned at a second position.

Provided is a concentration control module that improve responsiveness of concentration control of a vaporization system, and is used in a vaporization system. The concentration control module includes a concentration measuring part configured to measure a concentration of a source gas; a valve provided in a lead-out pipe configured to lead out the source gas from the tank; a pressure target value calculating part configured to calculate a pressure target value inside the tank by using a concentration target value of the source gas, and a concentration measured value of the concentration measuring part; a delay filter configured to generate a pressure control value by applying a predetermined time delay to the pressure target value obtained by the pressure target value calculating part; and a valve control part configured to feedback-control the valve by using a deviation between the pressure control value obtained by the delay filter, and a pressure inside the tank.

A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

A state detection device includes at least one chuck pin for holding a substrate, a photographing unit configured to photograph the chuck pin, and set at least one image to be obtained as a target image, a matching coordinate calculation unit configured to perform matching processing between the target image and a reference image which is at least one image showing the chuck pin, and calculate matching coordinates, which are coordinates indicating a position of the reference image in the target image when a matching score between the reference image and the target image is the highest, and a detection unit configured to detect an open/closed state of the chuck pin based on the matching coordinates. Therefore, the open/closed state of the chuck pin can be detected while detection accuracy is suppressed from lowering.

Described herein is a technique capable of properly attaching a nozzle to a reaction tube. According to one aspect thereof, there is provided a nozzle installation jig including: a lower plate configured to make contact with a process vessel in a vicinity of a lower end opening of the process vessel in which a nozzle is provided; a frame fixed to the lower plate and extending upward with respect to the lower plate; an upper plate fixed to the frame and provided with a sensor configured to detect a position of the nozzle in the process vessel; and a notification device configured to transmit a notification to an operator according to a detection result of the sensor.

Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

The apparatus for inspecting the electrostatic chuck for substrate processing includes the electrostatic chuck including a ceramic layer and an electrode layer coupled to an inside of the ceramic layer, an ultrasonic sensor unit disposed on the electrostatic chuck, allowing an ultrasonic wave to be incident into the electrostatic chuck, and converting a reflected signal reflected through the electrostatic chuck into an ultrasonic voltage signal, and an ultrasonic inspection unit to divide the ceramic layer and the electrode layer, based on a size value of the ultrasonic voltage signal.