A transistor (2) and a matching circuit substrate (3-6) are provided on a base plate (1) and connected to each other. A frame (15) is provided on the base plate (1) and surrounds the transistor (2) and the matching circuit substrate (3-6). The frame (15) has a smaller linear expansion coefficient than that of the base plate (1). A screwing portion (17) is provided in the frame (15). A size of the base plate (1) is smaller than that of the frame (15).

A device includes a housing unit with an internal volume. The device further includes a sensor coupled to a substrate via an electrical coupling, wherein the sensor is disposed within the internal volume of the housing unit, and wherein the sensor is in communication with an external environment of the housing unit from a side other than a side associated with the substrate. The device also includes a moisture detection unit electrically coupled to the sensor, wherein the moisture detection unit comprises at least two looped wires at different heights, and wherein the moisture detection unit is configured to detect presence of a moisture within an interior environment of the housing unit when the moisture detection unit becomes in direct contact with the moisture.

A high frequency semiconductor amplifier according to the present disclosure includes: a transistor formed on a semiconductor substrate and including a gate electrode, a source electrode, and a drain electrode; a matching circuit for input-side fundamental wave matching of the transistor; a first inductor formed on the semiconductor substrate and having one end connected to the gate electrode of the transistor and the other end connected to the matching circuit; a capacitor formed on the semiconductor substrate and having one end being short-circuited; and a second inductor formed on the semiconductor substrate and having one end connected to the gate electrode of the transistor and the other end connected to the other end of the capacitor, wherein the second inductor resonates in series with the capacitor at second harmonic frequency, has a mutual inductance of subtractive polarity with the first inductor, and the first inductor and the second inductor form mutual inductive circuits for input-side second harmonic matching.

A frame is made of a first material. An external terminal electrode is attached to the frame. A heat sink plate supports the frame and includes a mounting region in the frame. The heat sink plate is made of a non-composite material containing copper with purity of 95.0 weight percentage or more. A first adhesive layer bonds the frame and the heat sink plate to each other. The first adhesive layer is made of a second material different from the first material, and has a first composition. A power semiconductor element is mounted on the mounting region of the heat sink plate. A cover is attached to the frame to constitute a sealing space sealing the power semiconductor element without gross leak. A second adhesive layer bonds the frame and the cover to each other, and has a second composition different from the first composition of the first adhesive layer.

A package structure includes a package substrate. The package structure further includes a printed circuit board on the package substrate. The printed circuit board includes a board body, wherein the board body includes an annular structure, and the annular structure exposes a portion of the package substrate configured to receive a die. The printed circuit board further includes a metal pin on the board body, wherein the metal pin extends beyond the board body in a direction parallel to a top surface of the package substrate, the metal pin is configured to connect to an external circuit, and the metal pin is further configured to connect to the die in response to the die being on the package substrate.

An air cavity package includes a dielectric frame that is formed from an alumina ceramic, a polyimide, or a semi-crystalline thermoplastic. The dielectric frame is joined to a flange using a high temperature silicone adhesive. Leads may be bonded to the dielectric frame using a high temperature organic adhesive, a direct bond, or by brazing.

An air cavity package includes a dielectric frame that is formed from an alumina ceramic, a polyimide, or a semi-crystalline thermoplastic. The dielectric frame is joined to a flange using a high temperature silicone adhesive. Leads may be bonded to the dielectric frame using a high temperature organic adhesive, a direct bond, or by brazing.

A semiconductor module includes a multilayer substrate having an insulating plate on which first to third conductive layers respectively connected to positive, negative and output electrode terminals are arranged in a first direction, a plurality of first semiconductor elements each having top and bottom electrodes on the first conductive layer and arranged in a second direction orthogonal to the first direction, a plurality of second semiconductor elements each having top and bottom electrodes on the second conductive layer and arranged in the second direction, first and second main wiring members each connecting the top electrode of each first and second semiconductor element to the second and third conductive layers. The multilayer substrate includes a first control wiring layer extending in the second direction and passing under the first main wiring member, and a second control wiring layer extending in the second direction and passing under the second main wiring member.

A semiconductor device package is disclosed. The package according to one example includes a base having a main surface made of a metal, a dielectric side wall having a bottom surface facing the main surface, a joining material containing silver (Ag) and joining the main surface of the base and the bottom surface of the side wall to each other, a lead made of a metal joined to an upper surface of the side wall on a side opposite to the bottom surface, and a conductive layer not containing silver (Ag). The conductive layer is provided between the bottom surface and the upper surface of the side wall at a position overlapping the lead when viewed from a normal direction of the main surface. The conductive layer is electrically connected to the joining material, extends along the bottom surface, and is exposed from a lateral surface of the side wall.

The present disclosure relates to a package capable of handling high radio frequency (RF) power, which includes a carrier, a ring structure attached to a top surface of the carrier, an RF die attached to the top surface of the carrier within an opening of the ring structure and electrically connected to the ring structure, a heat spreader attached to a top surface of the ring structure, and an output signal lead configured to send out RF output signals generated by the RF die. Herein, the heat spreader covers a portion of the top surface of the ring structure at an output side of the package, and the output signal lead is attached to a top surface of the heat spreader. As such, the RF output signals are capable of being transmitted from the RF die to the output signal lead through the ring structure and the heat spreader.