The disclosure relates to a display device which includes a substrate having a bent portion and a main portion, a plurality of pixels disposed on the main portion, an electrical circuit disposed on the bent portion, and a conductive layer disposed on the substrate. At least a portion of the electrical circuit overlaps the plurality of pixels along a direction perpendicular to the main portion. The conductive layer is electrically connected to at least one of the plurality of pixels and the electrical circuit, and the conductive layer has at least one opening.

The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.

A display device includes: a light-emitting element at a display area; a driving element electrically connected to the light-emitting element; an encapsulation layer covering the light-emitting element; a touch sensor on the encapsulation layer; a connection pad at a bonding area, the connection pad including a lower conductive layer, an intermediate conductive layer on the lower conductive layer, and an upper conductive layer on the intermediate conductive layer; a cladding layer covering at least a side surface of the intermediate conductive layer and including an organic material; a passivation layer covering an upper surface of the cladding layer and including an inorganic material, a portion of the passivation layer being located under the upper conductive layer; and a driving circuit attached to the connection pad.

Provided are a display panel and a display device. The display panel includes a base substrate, a first transistor, and a planarization layer. The first transistor includes a first active layer, a first gate, a first source, and a first drain. The planarization layer is located above the first source. In the direction perpendicular to the base substrate, at least one insulating layer and a first organic area are provided between the film layer where the first active layer is located and the planarization layer. An insulating layer in the first organic area is made of organic material and the first organic area is located in a display area.

Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

A display device includes a display area including a first display area and a second display area; a first pixel circuit; a first light emitting element; a second pixel circuit; second light emitting elements; and a driving circuit overlapping the second light emitting elements in a plan view, wherein an edge of the display area includes a straight portion and a round portion, the second light emitting elements that are near each other in a first direction and a second direction configure a light emitting element group, and a number of the second light emitting elements configuring the light emitting element group disposed on the round portion is different from a number of the second light emitting elements configuring the light emitting element group disposed on the straight portion.

A display apparatus includes a substrate partitioned into a central area and a peripheral area disposed adjacent to the central area. The central area includes a display area; a first insulating layer corresponding to the peripheral area of the substrate; at least one slit corresponding to a region of the first insulating layer; and a cladding layer, which covers the at least one slit, on the first insulating layer.

An electronic apparatus includes a base substrate having an active area and a peripheral area adjacent to the active area. A plurality of pixels is disposed on the active area. The electronic apparatus also includes a plurality of power lines connected to the pixels. A power pad is disposed on a peripheral area and is configured to receive a power voltage. A power pattern is disposed on the peripheral area and connecting the power lines to the power pad. A plurality of sensing electrodes is disposed on the pixels in the active area. A plurality of sensing pads is disposed on the peripheral area and is electrically connected to the sensing electrodes. The sensing pads overlap with the power pattern.

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

An array substrate, its manufacturing method, and a display apparatus are provided. The array substrate having a substrate, includes: a monocrystalline silicon substrate employed as the substrate including a central display area, a first peripheral area, and a second peripheral area; substrate circuits integrated with a scan drive circuit in the first peripheral area, a data drive circuit in the second peripheral area, and a plurality of pixel circuits in the central display area; a plurality of scan lines in the central display area and coupled to the scan drive circuit; and a plurality of data lines in the central display area and coupled to the data drive circuit. The scan drive circuit, the data drive circuit, and the plurality of pixel circuits include a plurality of transistors, each of which has an active region inside the monocrystalline silicon layer.